2SK2025-01. Аналоги и основные параметры
Наименование производителя: 2SK2025-01
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 85 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для 2SK2025-01
-
подбор ⓘ MOSFET транзистора по параметрам
2SK2025-01 даташит
..1. Size:214K fuji
2sk2025-01.pdf 

N-channel MOS-FET 2SK2025-01 FAP-IIA Series 600V 2,4 4A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva
7.1. Size:215K inchange semiconductor
2sk2025.pdf 

isc N-Channel MOSFET Transistor 2SK2025-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.3. Size:225K fuji
2sk2021-01.pdf 

N-channel MOS-FET 2SK2021-01 FAP-IIA Series 500V 1,6 5A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva
8.4. Size:204K fuji
2sk2020-01mr.pdf 

N-channel MOS-FET 2SK2020-01MR FAP-IIA Series 500V 3 3,5A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ
8.6. Size:226K fuji
2sk2023-01.pdf 

FUJI POWER MOSFET 2SK2023-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c
8.7. Size:195K fuji
2sk2022-01m.pdf 

N-channel MOS-FET 2SK2022-01M FAP-IIA Series 500V 1,6 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv
8.9. Size:213K inchange semiconductor
2sk2028-01.pdf 

isc N-Channel MOSFET Transistor 2SK2028-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.10. Size:219K inchange semiconductor
2sk2024-01.pdf 

isc N-Channel MOSFET Transistor 2SK2024-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.11. Size:215K inchange semiconductor
2sk2021-01.pdf 

isc N-Channel MOSFET Transistor 2SK2021-01 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.12. Size:229K inchange semiconductor
2sk2020-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 )
8.13. Size:215K inchange semiconductor
2sk2027-01.pdf 

isc N-Channel MOSFET Transistor 2SK2027-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.14. Size:212K inchange semiconductor
2sk2020-01.pdf 

isc N-Channel MOSFET Transistor 2SK2020-01 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.15. Size:215K inchange semiconductor
2sk2023-01.pdf 

isc N-Channel MOSFET Transistor 2SK2023-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.16. Size:212K inchange semiconductor
2sk2022-01m.pdf 

isc N-Channel MOSFET Transistor 2SK2022-01M DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.17. Size:219K inchange semiconductor
2sk2026-01.pdf 

isc N-Channel MOSFET Transistor 2SK2026-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
Другие MOSFET... 2SK4101LS
, 2SK4212
, 2SK508
, 2SK940
, 2SK2648-01
, 2SK2674
, 2SK1065
, 2SK1358
, STP65NF06
, 2SK2043LS
, 2SK3053
, 2SK3102-01R
, 2SK3114
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, 2SJ306
.
History: APA2N70K-HF
| 2SK2674
| 2SK940
| 2SK508