3SK324 Specs and Replacement

Type Designator: 3SK324

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.02 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Package: CMPAK-4

3SK324 substitution

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3SK324 datasheet

 ..1. Size:85K  renesas
 3sk324.pdf pdf_icon

3SK324

3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0532-0100 Rev.1.00 May 18, 2005 Features Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz) High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V High Endurance Voltage; VDS = 6 V Outline RENESAS Package code PTSP0004ZA-A (Package n... See More ⇒

 9.1. Size:201K  renesas
 3sk323.pdf pdf_icon

3SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: 3SK258, 3SK259, 3SK260, 3SK291, 3SK292, 3SK293, 3SK294, 3SK318, 2SK3878, 2N2608, 2N2609, 2N3684, 2N3685, 2N3686, 2N3687, 2N3796, 2N3797

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