2N4341 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N4341

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 800 Ohm

Package: TO-18

2N4341 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N4341 Datasheet (PDF)

1.1. 2n4338 2n4339 2n4340 2n4341.pdf Size:75K _vishay

2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 -0.3 to -1 -50 0.6 0.6 2N4339 -0.6 to -1.8 -50 0.8 1.5 2N4340 -1 to -3 -50 1.3 3.6 2N4341 -2 to -6 -50 2 9 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage: 2N4338 <1 V D Full Performance from Low-Voltage D High-Gain, Low-Noise Amplifiers

1.2. 2n4338 2n4339 2n4340 2n4341.pdf Size:19K _calogic

N-Channel JFET Low Noise Amplifier CORPORATION 2N4338 � 2N4341 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A � Exceptionally High Figure of Merit � � Radiation Immunity Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V � � Extremely Low Noise and Capacitance Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

5.1. 2n433 2n434.pdf Size:304K _general_electric

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5.2. 2n3442-2n4347.pdf Size:197K _comset

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. � Low Collector-Emitter Saturation Voltage � VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc � 2N4347 � Collector-Emitter Sustaining Volta

5.3. 2n4347 2n3442.pdf Size:132K _mospec