FRM234D
MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM234D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 104
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
TO204AA
FRM234D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM234D
Datasheet (PDF)
8.1. Size:48K intersil
frm234.pdf 
FRM234D, FRM234R,FRM234H7A, 250V, 0.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 7A, 250V, RDS(on) = 0.70TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
9.1. Size:59K intersil
frm230.pdf
FRM230D, FRM230R,FRM230H8A, 200V, 0.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 8A, 200V, RDS(on) = 0.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
9.2. Size:229K inchange semiconductor
frm230.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM230FEATURES8A, 200V, RDS(on) = 0.5Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed to exhibit minimalcharacteristic changes to total dose and neutron exposures.
Datasheet: FRM130H
, FRM130R
, FRM140D
, FRM140H
, FRM140R
, FRM230D
, FRM230H
, FRM230R
, IRFP460
, FRM234H
, FRM234R
, FRM240D
, FRM240H
, FRM240R
, FRM244D
, FRM244H
, FRM244R
.
