FRM234D Specs and Replacement
Type Designator: FRM234D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 104 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO204AA
FRM234D substitution
- MOSFET ⓘ Cross-Reference Search
FRM234D datasheet
frm234.pdf
FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 7A, 250V, RDS(on) = 0.70 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
frm230.pdf
FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 8A, 200V, RDS(on) = 0.50 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
frm230.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor FRM230 FEATURES 8A, 200V, RDS(on) = 0.5 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. ... See More ⇒
Detailed specifications: FRM130H, FRM130R, FRM140D, FRM140H, FRM140R, FRM230D, FRM230H, FRM230R, IRFZ44, FRM234H, FRM234R, FRM240D, FRM240H, FRM240R, FRM244D, FRM244H, FRM244R
Keywords - FRM234D MOSFET specs
FRM234D cross reference
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