FRM234D, FRM234R,FRM234H7A, 250V, 0.70 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 7A, 250V, RDS(on) = 0.70TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

FRM230D, FRM230R,FRM230H8A, 200V, 0.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 8A, 200V, RDS(on) = 0.50TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)

INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM230FEATURES8A, 200V, RDS(on) = 0.5Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed to exhibit minimalcharacteristic changes to total dose and neutron exposures.