2N6960 Datasheet and Replacement
Type Designator: 2N6960
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 2000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO204
2N6960 substitution
2N6960 Datasheet (PDF)
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2n696 2n697.pdf
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti
Datasheet: 2N6913 , 2N6913A , 2N6914 , 2N6914A , 2N6914B , 2N6915 , 2N6916 , 2N6917 , IRFP064N , 2N6961 , 2N6961A , 2N6962 , 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX .
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