2N6960 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6960
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 2000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO204
2N6960 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6960 Datasheet (PDF)
9.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf 
Size:298K _rca
9.2. 2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf Size:1095K _ixys
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9.3. 2n696 2n697.pdf Size:61K _microsemi
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti
9.4. 2n6962.pdf Size:270K _siliconix
Datasheet: 2N6913 , 2N6913A , 2N6914 , 2N6914A , 2N6914B , 2N6915 , 2N6916 , 2N6917 , 2SK117 , 2N6961 , 2N6961A , 2N6962 , 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX .
