FRM234H Specs and Replacement

Type Designator: FRM234H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 104 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO204AA

FRM234H substitution

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FRM234H datasheet

 8.1. Size:48K  intersil
frm234.pdf pdf_icon

FRM234H

FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 7A, 250V, RDS(on) = 0.70 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

 9.1. Size:59K  intersil
frm230.pdf pdf_icon

FRM234H

FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 8A, 200V, RDS(on) = 0.50 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

 9.2. Size:229K  inchange semiconductor
frm230.pdf pdf_icon

FRM234H

INCHANGE Semiconductor isc N-Channel Mosfet Transistor FRM230 FEATURES 8A, 200V, RDS(on) = 0.5 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. ... See More ⇒

Detailed specifications: FRM130R, FRM140D, FRM140H, FRM140R, FRM230D, FRM230H, FRM230R, FRM234D, IRF640, FRM234R, FRM240D, FRM240H, FRM240R, FRM244D, FRM244H, FRM244R, FRM430D

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