2N4868 Datasheet and Replacement
Type Designator: 2N4868
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 0.003 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Package: TO-72
2N4868 substitution
2N4868 Datasheet (PDF)
2n4867-a 2n4868-a 2n4869-a.pdf

Databook.fxp 1/14/99 12:00 PM Page B-1701/99 B-172N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 40 VGate Current 50 mAContinuous Device Power Dissipation 300mWPower Derating 1.7 mW/CStorage Temperature Range 6
2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n4863.pdf

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
Datasheet: 2N4858 , 2N4859 , 2N4860 , 2N4861 , 2N4859A , 2N4860A , 2N4861A , 2N4867 , IRF3205 , 2N4869 , 2N4867A , 2N4868A , 2N4869A , 2N5020 , 2N5021 , 2N5114 , 2N5115 .
History: BUZ900P
Keywords - 2N4868 MOSFET datasheet
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2N4868 equivalent finder
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History: BUZ900P



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