2N4868 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N4868
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 3 V
Maximum Drain Current |Id|: 0.003 A
Maximum Junction Temperature (Tj): 200 °C
Package: TO-72
2N4868 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N4868 Datasheet (PDF)
1.1. 2n4867-a 2n4868-a 2n4869-a.pdf 
Size:63K _interfet
Databook.fxp 1/14/99 12:00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/C Storage Temperature Range 65C to + 2
5.1. 2n4856-59 2n4860-61.pdf Size:278K _motorola
5.2. 2n4863.pdf Size:68K _central
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
5.3. 2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf Size:82K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
5.4. 2n4864.pdf Size:130K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V (Min) APPLICATIONS ·For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector ABS
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
