FRM244D MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM244D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 258 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO204AA
FRM244D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM244D Datasheet (PDF)
frm244.pdf
FRM244D, FRM244R,FRM244H12A, 250V, 0.400 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 12A, 250V, RDS(on) = 0.400TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frm240.pdf
FRM240D, FRM240R,FRM240H16A, 200V, 0.24 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 16A, 200V, RDS(on) = 0.24TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
frm240.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor FRM240FEATURES16A, 200V, RDS(on) = 0.24Second Generation Rad Hard MOSFET ResultsFrom New Design ConceptsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is specially designed and processed toexhibit minimal characteristic changes to total dose and neutronexposures
Datasheet: FRM230H , FRM230R , FRM234D , FRM234H , FRM234R , FRM240D , FRM240H , FRM240R , IRF3710 , FRM244H , FRM244R , FRM430D , FRM430H , FRM430R , FRM440D , FRM440H , FRM440R .
History: FQPF12N60C
History: FQPF12N60C
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