FRM244H Specs and Replacement
Type Designator: FRM244H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 258 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO204AA
FRM244H substitution
- MOSFET ⓘ Cross-Reference Search
FRM244H datasheet
frm244.pdf
FRM244D, FRM244R, FRM244H 12A, 250V, 0.400 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 12A, 250V, RDS(on) = 0.400 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒
frm240.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor FRM240 FEATURES 16A, 200V, RDS(on) = 0.24 Second Generation Rad Hard MOSFET Results From New Design Concepts Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures... See More ⇒
Detailed specifications: FRM230R, FRM234D, FRM234H, FRM234R, FRM240D, FRM240H, FRM240R, FRM244D, AO3400, FRM244R, FRM430D, FRM430H, FRM430R, FRM440D, FRM440H, FRM440R, FRM450D
Keywords - FRM244H MOSFET specs
FRM244H cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BLP028N10-B
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