2N5951 Datasheet and Replacement
Type Designator: 2N5951
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 0.013 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-92-18R
2N5951 substitution
2N5951 Datasheet (PDF)
2n5951.pdf

September 20072N5951N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5949 2n5950 2n5951 2n5952 2n5953.pdf

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2n5950.pdf

September 20072N5950N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward
2n5952.pdf

2N5952N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current
Datasheet: 2N5906 , 2N5907 , 2N5908 , 2N5909 , 2N5911 , 2N5912 , 2N5949 , 2N5950 , 5N65 , 2N5952 , 2N5953 , 2N6449 , 2N6450 , 2N6451 , 2N6452 , 2N6453 , 2N6454 .
History: VS3603GPMT | HYG032N03LR1C1
Keywords - 2N5951 MOSFET datasheet
2N5951 cross reference
2N5951 equivalent finder
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History: VS3603GPMT | HYG032N03LR1C1



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