2N5953 Datasheet. Specs and Replacement
Type Designator: 2N5953 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 0.005 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Package: TO-92-18R
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2N5953 substitution
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2N5953 datasheet
2n5949 2n5950 2n5951 2n5952 2n5953.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2n5951.pdf
September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward... See More ⇒
2n5950.pdf
September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward... See More ⇒
2n5952.pdf
2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current ... See More ⇒
Detailed specifications: 2N5908, 2N5909, 2N5911, 2N5912, 2N5949, 2N5950, 2N5951, 2N5952, 5N60, 2N6449, 2N6450, 2N6451, 2N6452, 2N6453, 2N6454, 2N6804, 2N6806
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