2N5953 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N5953
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.36 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 2.5 V
Maximum Drain Current |Id|: 0.005 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92-18R
2N5953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5953 Datasheet (PDF)
1.1. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf 
Size:71K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
5.1. 2n5950.pdf Size:97K _fairchild_semi
September 2007 2N5950 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu
5.2. 2n5952.pdf Size:25K _fairchild_semi
2N5952 N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA T
5.3. 2n5951.pdf Size:100K _fairchild_semi
September 2007 2N5951 N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Cu
5.4. 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf Size:114K _central
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
5.5. 2n5956.pdf Size:10K _semelab
2N5956 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifica
5.6. 2n5954 2n5955 2n5956.pdf Size:131K _jmnic
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi
5.7. 2n5954 2n5955 2n5956.pdf Size:126K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area Ў¤ Complement to type 2N6372/6373/6374 APPLICATIONS Ў¤ Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig
Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
