Справочник MOSFET. 2N5953

 

2N5953 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N5953

Тип транзистора: JFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.36 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 2.5 V

Максимально допустимый постоянный ток стока |Id|: 0.005 A

Максимальная температура канала (Tj): 150 °C

Тип корпуса: TO-92-18R

Аналог (замена) для 2N5953

 

 

2N5953 Datasheet (PDF)

0.1. 2n5949 2n5950 2n5951 2n5952 2n5953.pdf Size:71K _central

2N5953

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.1. 2n5952.pdf Size:25K _fairchild_semi

2N5953
2N5953

2N5952N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current

9.2. 2n5951.pdf Size:100K _fairchild_semi

2N5953
2N5953

September 20072N5951N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward

 9.3. 2n5950.pdf Size:97K _fairchild_semi

2N5953
2N5953

September 20072N5950N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward

9.4. 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf Size:114K _central

2N5953
2N5953

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.5. 2n5956.pdf Size:10K _semelab

2N5953

2N5956Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

9.6. 2n5954 2n5955 2n5956.pdf Size:131K _jmnic

2N5953
2N5953

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area Complement to type 2N6372 2N6373 2N6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 Collector

9.7. 2n5954 2n5955 2n5956.pdf Size:126K _inchange_semiconductor

2N5953
2N5953

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area Complement to type 2N6372/6373/6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifie

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top