Справочник MOSFET. 2N5953

 

2N5953 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N5953
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.005 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Тип корпуса: TO-92-18R

 Аналог (замена) для 2N5953

 

 

2N5953 Datasheet (PDF)

 ..1. Size:71K  central
 2n5949 2n5950 2n5951 2n5952 2n5953.pdf

2N5953

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.1. Size:100K  fairchild semi
 2n5951.pdf

2N5953 2N5953

September 20072N5951N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward

 9.2. Size:97K  fairchild semi
 2n5950.pdf

2N5953 2N5953

September 20072N5950N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward

 9.3. Size:25K  fairchild semi
 2n5952.pdf

2N5953 2N5953

2N5952N-Channel RF Ampifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current

 9.4. Size:114K  central
 2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf

2N5953 2N5953

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.5. Size:10K  semelab
 2n5956.pdf

2N5953

2N5956Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 45V IC = 6A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif

 9.6. Size:131K  jmnic
 2n5954 2n5955 2n5956.pdf

2N5953 2N5953

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area Complement to type 2N6372 2N6373 2N6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 Collector

 9.7. Size:126K  inchange semiconductor
 2n5954 2n5955 2n5956.pdf

2N5953 2N5953

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area Complement to type 2N6372/6373/6374 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifie

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