All MOSFET. 2N7288H Datasheet

 

2N7288H Datasheet and Replacement


   Type Designator: 2N7288H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.623 Ohm
   Package: TO-257AA
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2N7288H Datasheet (PDF)

 8.1. Size:46K  harris semi
 2n7288d-r-h.pdf pdf_icon

2N7288H

2N7288D, 2N7288RS E M I C O N D U C T O R2N7288HREGISTRATION PENDINGRadiation HardenedAvailable as FRS244 (D, R, H)N-Channel Power MOSFETsNovember 1994Features Package 9A, 250V, RDS(on) = 0.415TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si

 9.1. Size:177K  no
 2n7272 2n7275 2n7278 2n7281.pdf pdf_icon

2N7288H

INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604Bbe completed by 30 November 2004. 30 July 2004 SUPERSEDINGMIL-PRF-19500/604A21 June 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCA16N60F109 | AP30H80Q | R6006JND3 | 1N70Z | MEE4294-G | NCEPB303GU | 2SK1954-Z

Keywords - 2N7288H MOSFET datasheet

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