All MOSFET. 2N7288H Datasheet

 

2N7288H Datasheet and Replacement


   Type Designator: 2N7288H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.623 Ohm
   Package: TO-257AA
 

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2N7288H Datasheet (PDF)

 8.1. Size:46K  harris semi
 2n7288d-r-h.pdf pdf_icon

2N7288H

2N7288D, 2N7288RS E M I C O N D U C T O R2N7288HREGISTRATION PENDINGRadiation HardenedAvailable as FRS244 (D, R, H)N-Channel Power MOSFETsNovember 1994Features Package 9A, 250V, RDS(on) = 0.415TO-257AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si

 9.1. Size:177K  no
 2n7272 2n7275 2n7278 2n7281.pdf pdf_icon

2N7288H

INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604Bbe completed by 30 November 2004. 30 July 2004 SUPERSEDINGMIL-PRF-19500/604A21 June 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

Datasheet: 2N6452 , 2N6453 , 2N6454 , 2N6804 , 2N6806 , 2N7091 , 2N7288D , 2N7288R , AO3401 , BF246B , BF247A , BST100 , BST70A , BUZ326 , FJN598J , FJX597JB , FS10KM-10 .

History: STP26N65DM2 | SI2301ADS-T1 | NCE01P13K | JFAM20N50E | R6020ENJ | SC8205S | BLM7002

Keywords - 2N7288H MOSFET datasheet

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