BF247A Datasheet and Replacement
Type Designator: BF247A
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.08 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Package: TO-92
BF247A substitution
BF247A Datasheet (PDF)
bf246a bf246b bf246c bf247a bf247b bf247c.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBF246A; BF246B; BF246C;BF247A; BF247B; BF247CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junction BF246A; BF246B; BF246C;field-effect transistors BF247A; BF247B; BF247CF
bf247a.pdf

September 2007BF247AN-Channel Amplifier This device is designed primarily for electronic switching applications such as low on resistance analog switching. Sourced from process 51.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Ga
Datasheet: 2N6454 , 2N6804 , 2N6806 , 2N7091 , 2N7288D , 2N7288R , 2N7288H , BF246B , P60NF06 , BST100 , BST70A , BUZ326 , FJN598J , FJX597JB , FS10KM-10 , FS3KM-10 , PS0151 .
History: HY3210B
Keywords - BF247A MOSFET datasheet
BF247A cross reference
BF247A equivalent finder
BF247A lookup
BF247A substitution
BF247A replacement
History: HY3210B



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