All MOSFET. BST100 Datasheet

 

BST100 Datasheet and Replacement


   Type Designator: BST100
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-92
 

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BST100 Datasheet (PDF)

 ..1. Size:67K  philips
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BST100

DISCRETE SEMICONDUCTORSDATA SHEETBST100P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBST100D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel vertical D-MOS transistorDrain-source voltage -VDS max. 60 VT

Datasheet: 2N6804 , 2N6806 , 2N7091 , 2N7288D , 2N7288R , 2N7288H , BF246B , BF247A , IRF730 , BST70A , BUZ326 , FJN598J , FJX597JB , FS10KM-10 , FS3KM-10 , PS0151 , IPS0151S .

Keywords - BST100 MOSFET datasheet

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