BST100 Specs and Replacement
Type Designator: BST100
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO-92
BST100 substitution
- MOSFET ⓘ Cross-Reference Search
BST100 datasheet
bst100.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BST100 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BST100 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel vertical D-MOS transistor Drain-source voltage -VDS max. 60 V T... See More ⇒
Detailed specifications: 2N6804, 2N6806, 2N7091, 2N7288D, 2N7288R, 2N7288H, BF246B, BF247A, IRFB31N20D, BST70A, BUZ326, FJN598J, FJX597JB, FS10KM-10, FS3KM-10, PS0151, IPS0151S
Keywords - BST100 MOSFET specs
BST100 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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