ISL9N303AS3ST MOSFET Datasheet: N-Ch, 30V, 75A. Full specification with pinout and replacement list

ISL9N303AS3ST Specs and Replacement

Type Designator: ISL9N303AS3ST

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 1350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO-263AB

ISL9N303AS3ST substitution

- MOSFET ⓘ Cross-Reference Search

ISL9N303AS3ST datasheet

5.1. Size:269K fairchild semi
isl9n303ap3.pdf pdf_icon

September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10V low on-resistance. rDS(ON) = 0.004 (Typ), VGS =... See More ⇒

7.1. Size:249K fairchild semi
isl9n302as3st.pdf pdf_icon

April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10V low on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5V Optimized for switching applications, this... See More ⇒

7.2. Size:121K fairchild semi
isl9n302ap3.pdf pdf_icon

January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) = 0.0019 (Typ), VGS = 10V low on-resistance. rDS(ON) = 0.0027 (Typ), VGS = 4.5V Optimized for switching applications, ... See More ⇒

7.3. Size:843K cn vbsemi
isl9n306ad3s.pdf pdf_icon

ISL9N306AD3S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET AB... See More ⇒