All MOSFET. ISL9N303AS3ST Datasheet

 

ISL9N303AS3ST Datasheet and Replacement


   Type Designator: ISL9N303AS3ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO-263AB
 

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ISL9N303AS3ST Datasheet (PDF)

 5.1. Size:269K  fairchild semi
 isl9n303ap3.pdf pdf_icon

ISL9N303AS3ST

September 2002PWM OptimizedISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3N-Channel Logic Level UltraFET Trench MOSFETs30V, 75A, 3.2mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.004 (Typ), VGS =

 7.1. Size:249K  fairchild semi
 isl9n302as3st.pdf pdf_icon

ISL9N303AS3ST

April 2002ISL9N302AS3STN-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10Vlow on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5VOptimized for switching applications, this

 7.2. Size:121K  fairchild semi
 isl9n302ap3.pdf pdf_icon

ISL9N303AS3ST

January 2002ISL9N302AP3N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0019 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.0027 (Typ), VGS = 4.5VOptimized for switching applications,

 7.3. Size:843K  cn vbsemi
 isl9n306ad3s.pdf pdf_icon

ISL9N303AS3ST

ISL9N306AD3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETAB

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Datasheet: BUZ326 , FJN598J , FJX597JB , FS10KM-10 , FS3KM-10 , PS0151 , IPS0151S , ISL9N303AP3 , EMB04N03H , ISL9N303AS3 , J105 , J106 , J107 , JFTJ105 , J174 , J175 , J176 .

History: DH019N04I | APM2324A

Keywords - ISL9N303AS3ST MOSFET datasheet

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