J106
MOSFET. Datasheet pdf. Equivalent
Type Designator: J106
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 0.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6
Ohm
Package:
TO-92
J106
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J106
Datasheet (PDF)
..1. Size:718K fairchild semi
j105 j106 j107 jftj105.pdf 
J105 JFTJ105J106J107GDGSSOT-223TO-92GSNOTE: Source & DrainD are interchangeableN-Channel SwitchThis device is designed for analog or digital switching applications wherevery low On Resistance is mandatory. Sourced from Process 59.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Sour
..2. Size:48K vishay
j105 j106 j107.pdf
J105/106/107Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J105 4.5 to 10 3 10 14J106 2 to 6 6 10 14J107 0.5 to 4.5 8 10 14FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J105
0.1. Size:50K philips
buj106ax 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
0.2. Size:47K philips
buj106a.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER
0.3. Size:283K toshiba
2sj106.pdf
2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O
0.4. Size:335K cn ween semi
buj106a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ106ASilicon Diffused Power TransistorProduct specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications,
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