All MOSFET. J106 Datasheet

 

J106 MOSFET. Datasheet pdf. Equivalent

Type Designator: J106

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.625 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Drain Current |Id|: 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 6 Ohm

Package: TO-92

J106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

J106 Datasheet (PDF)

0.1. buj106a.pdf Size:47K _philips

J106
J106

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

0.2. buj106ax 3.pdf Size:50K _philips

J106
J106

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

 0.3. 2sj106.pdf Size:283K _toshiba

J106
J106

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O

0.4. j105 j106 j107 jftj105.pdf Size:718K _fairchild_semi

J106
J106

J105 JFTJ105J106J107GDGSSOT-223TO-92GSNOTE: Source & DrainD are interchangeableN-Channel SwitchThis device is designed for analog or digital switching applications wherevery low On Resistance is mandatory. Sourced from Process 59.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Sour

 0.5. j105 j106 j107.pdf Size:48K _vishay

J106
J106

J105/106/107Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J105 4.5 to 10 3 10 14J106 2 to 6 6 10 14J107 0.5 to 4.5 8 10 14FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J105

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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