Справочник MOSFET. J106

 

J106 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: J106
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 6 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
   Тип корпуса: TO-92

 Аналог (замена) для J106

 

 

J106 Datasheet (PDF)

 ..1. Size:718K  fairchild semi
 j105 j106 j107 jftj105.pdf

J106 J106

J105 JFTJ105J106J107GDGSSOT-223TO-92GSNOTE: Source & DrainD are interchangeableN-Channel SwitchThis device is designed for analog or digital switching applications wherevery low On Resistance is mandatory. Sourced from Process 59.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Sour

 ..2. Size:48K  vishay
 j105 j106 j107.pdf

J106 J106

J105/106/107Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)J105 4.5 to 10 3 10 14J106 2 to 6 6 10 14J107 0.5 to 4.5 8 10 14FEATURES BENEFITS APPLICATIONSD Low On-Resistance: J105

 0.1. Size:50K  philips
 buj106ax 3.pdf

J106 J106

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

 0.2. Size:47K  philips
 buj106a.pdf

J106 J106

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

 0.3. Size:283K  toshiba
 2sj106.pdf

J106 J106

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O

 0.4. Size:335K  cn ween semi
 buj106a.pdf

J106 J106

DISCRETE SEMICONDUCTORSDATA SHEETBUJ106ASilicon Diffused Power TransistorProduct specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications,

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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