J106 - описание и поиск аналогов

J105 JFTJ105 J106 J107 G D G S SOT-223 TO-92 G S NOTE Source & Drain D are interchangeable N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Sour

J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 4.5 to 10 3 10 14 J106 2 to 6 6 10 14 J107 0.5 to 4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D Low On-Resistance J105

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage VGDS = 50 V High input impedance I = 1.0 nA (max) (V = 30 V) GSS GS Low R R = 270 (typ.) (I = -5 mA) DS (ON) DS (O

DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications,