FRM440H MOSFET. Datasheet pdf. Equivalent
Type Designator: FRM440H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 84 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO204AA
FRM440H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FRM440H Datasheet (PDF)
frm440.pdf
FRM440D, FRM440R,FRM440H6A, 500V, 1.40 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETsFeatures Package 6A, 500V, RDS(on) = 1.40TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)- Performance Permits Limited Use to 3000KRAD(Si)
Datasheet: FRM240R , FRM244D , FRM244H , FRM244R , FRM430D , FRM430H , FRM430R , FRM440D , 7N65 , FRM440R , FRM450D , FRM450H , FRM450R , FRM9130D , FRM9130H , FRM9130R , FRM9140D .
History: 3LP01M
History: 3LP01M
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