FRM450H Specs and Replacement

Type Designator: FRM450H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 260 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO204AA

FRM450H substitution

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FRM450H datasheet

 8.1. Size:47K  intersil
 frm450.pdf pdf_icon

FRM450H

FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package 10A, 500V, RDS(on) = 0.600 TO-204AA Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) ... See More ⇒

Detailed specifications: FRM244R, FRM430D, FRM430H, FRM430R, FRM440D, FRM440H, FRM440R, FRM450D, 7N65, FRM450R, FRM9130D, FRM9130H, FRM9130R, FRM9140D, FRM9140H, FRM9140R, FRM9230D

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