All MOSFET. STP9NB50 Datasheet

 

STP9NB50 Datasheet and Replacement


   Type Designator: STP9NB50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220
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STP9NB50 Datasheet (PDF)

 ..1. Size:356K  st
 stp9nb50.pdf pdf_icon

STP9NB50

STP9NB50STP9NB50FPN-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP9NB50 500 V

 0.1. Size:363K  st
 stp9nb50-fp.pdf pdf_icon

STP9NB50

STP9NB50STP9NB50FPN-CHANNEL 500V - 0.75 - 8.6 A TO-220/TO-220FPPowerMesh MOSFETTYPE VDSS RDS(on) IDSTP9NB50 500 V

 8.1. Size:352K  st
 stp9nb60-fp.pdf pdf_icon

STP9NB50

STP9NB60STP9NB60FPN - CHANNEL 600V - 0.7 - 9A TO-220/TO220FPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTP9NB60 600 V

 8.2. Size:345K  st
 stp9nb60-fp .pdf pdf_icon

STP9NB50

STP9NB60STP9NB60FPN - CHANNEL 600V - 0.7 - 9A TO-220/TO220FPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTP9NB60 600 V

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History: HY3708M | CED05N8 | MC08N005C | AON6794 | QM3020P | IRLR024 | BL10N70-A

Keywords - STP9NB50 MOSFET datasheet

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