TN0601L
MOSFET. Datasheet pdf. Equivalent
Type Designator: TN0601L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.47
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
TO-92
TN0601L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TN0601L
Datasheet (PDF)
..1. Size:63K vishay
tn0601l vn0606l vn66afd.pdf
TN0601L, VN0606L, VN66AFDVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 1.2 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMO
9.1. Size:611K supertex
tn0604.pdf
Supertex inc. TN0604N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance (140pF typical)combination produces a dev
9.2. Size:601K supertex
tn0606.pdf
Supertex inc. TN0606N-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max.transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance - 100pF typicalcombination produces a de
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