TN0601L Datasheet and Replacement
Type Designator: TN0601L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-92
TN0601L substitution
TN0601L Datasheet (PDF)
tn0601l vn0606l vn66afd.pdf

TN0601L, VN0606L, VN66AFDVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 1.2 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMO
tn0604.pdf

Supertex inc. TN0604N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance (140pF typical)combination produces a dev
tn0606.pdf

Supertex inc. TN0606N-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max.transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance - 100pF typicalcombination produces a de
Datasheet: SST309 , SST310 , U309 , U310 , VN0610L , VN10KE , VN10KM , VN2222L , IRF730 , VN0606L , VN66AFD , 2SK2671 , 2SK2850-01 , 2SK2148-01R , 2SK740 , STK0765BF , SMK0160 .
History: FDP4D5N10C
Keywords - TN0601L MOSFET datasheet
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History: FDP4D5N10C



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