TN0601L Specs and Replacement
Type Designator: TN0601L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-92
TN0601L substitution
- MOSFET ⓘ Cross-Reference Search
TN0601L datasheet
tn0601l vn0606l vn66afd.pdf
TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47 VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33 VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 1.2 W D Low Offset Voltage D Direct Logic-Level Interface TTL/CMO... See More ⇒
tn0604.pdf
Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance (140pF typical) combination produces a dev... See More ⇒
tn0606.pdf
Supertex inc. TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max. transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance - 100pF typical combination produces a de... See More ⇒
Detailed specifications: SST309 , SST310 , U309 , U310 , VN0610L , VN10KE , VN10KM , VN2222L , IRFB31N20D , VN0606L , VN66AFD , 2SK2671 , 2SK2850-01 , 2SK2148-01R , 2SK740 , STK0765BF , SMK0160 .
Keywords - TN0601L MOSFET specs
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