All MOSFET. SMN09L20D Datasheet

 

SMN09L20D Datasheet and Replacement


   Type Designator: SMN09L20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-252
 

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SMN09L20D Datasheet (PDF)

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SMN09L20D

SMN09L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV =200V (Min.) DSSD Low gate charge: Q =9nC (Typ.) g Low drain-source On-Resistance: R =0.34 (Typ.) DS(on) 100% avalanche tested RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SMN09L20D SMN09L20 T

Datasheet: SMN01Z30Q , SMN0250F , SMN03T80F , SMN03T80IS , SMN0470F , SMN04L20D , SMN04L20IS , SMN0665F , STF13NM60N , SMN18T50FD , SMNY2Z30 , STK0170 , STK0380D , STK0380F , STK730F , STK830D , STK830F .

History: 2N60G | NCE3008Y

Keywords - SMN09L20D MOSFET datasheet

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