SMN09L20D Datasheet and Replacement
Type Designator: SMN09L20D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-252
SMN09L20D substitution
SMN09L20D Datasheet (PDF)
smn09l20d.pdf

SMN09L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV =200V (Min.) DSSD Low gate charge: Q =9nC (Typ.) g Low drain-source On-Resistance: R =0.34 (Typ.) DS(on) 100% avalanche tested RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SMN09L20D SMN09L20 T
Datasheet: SMN01Z30Q , SMN0250F , SMN03T80F , SMN03T80IS , SMN0470F , SMN04L20D , SMN04L20IS , SMN0665F , IRFP250 , SMN18T50FD , SMNY2Z30 , STK0170 , STK0380D , STK0380F , STK730F , STK830D , STK830F .
History: AK5N60S | IRFS3806 | AU5N65S | AF5N60S | AD5N65S | IRFH5010
Keywords - SMN09L20D MOSFET datasheet
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History: AK5N60S | IRFS3806 | AU5N65S | AF5N60S | AD5N65S | IRFH5010



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