SMN09L20D Specs and Replacement
Type Designator: SMN09L20D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-252
SMN09L20D substitution
- MOSFET ⓘ Cross-Reference Search
SMN09L20D datasheet
smn09l20d.pdf
SMN09L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage BV =200V (Min.) DSS D Low gate charge Q =9nC (Typ.) g Low drain-source On-Resistance R =0.34 (Typ.) DS(on) 100% avalanche tested RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SMN09L20D SMN09L20 T... See More ⇒
Detailed specifications: SMN01Z30Q, SMN0250F, SMN03T80F, SMN03T80IS, SMN0470F, SMN04L20D, SMN04L20IS, SMN0665F, IRFP250, SMN18T50FD, SMNY2Z30, STK0170, STK0380D, STK0380F, STK730F, STK830D, STK830F
Keywords - SMN09L20D MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK1876
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