All MOSFET. SUN0260D Datasheet

 

SUN0260D Datasheet and Replacement


   Type Designator: SUN0260D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: TO-252
 

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SUN0260D Datasheet (PDF)

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SUN0260D

SUN0260D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=3.9 (Typ.) Low gate charge: Qg=6.5nC (Typ.) D Low reverse transfer capacitance: Crss=4.4pF (Typ.) RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SUN0260D SUN0260 T

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SUN0260D

SUN0260F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=3.9 (Typ.) Low gate charge: Qg=6.5nC (Typ.) Low reverse transfer capacitance: Crss=4.4pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0260F SUN0260 T

Datasheet: SMNY2Z30 , STK0170 , STK0380D , STK0380F , STK730F , STK830D , STK830F , STK830P , CS150N03A8 , SUN0260F , SUN0460D , SUN0460F , SUN0460I2 , SUN0465F , SUN0465I2 , SUN0550D , SUN0550F .

History: ISCD3NK80Z | JCS9N50VC | BL10N40-A | NTS4101PT1 | FDB0105N407L | KP819AC | IRHG9110

Keywords - SUN0260D MOSFET datasheet

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