SUN0260F MOSFET. Datasheet pdf. Equivalent
Type Designator: SUN0260F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 36 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: TO-220F
SUN0260F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUN0260F Datasheet (PDF)
sun0260f.pdf
SUN0260F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=3.9 (Typ.) Low gate charge: Qg=6.5nC (Typ.) Low reverse transfer capacitance: Crss=4.4pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0260F SUN0260 T
sun0260d.pdf
SUN0260D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=3.9 (Typ.) Low gate charge: Qg=6.5nC (Typ.) D Low reverse transfer capacitance: Crss=4.4pF (Typ.) RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SUN0260D SUN0260 T
Datasheet: STK0170 , STK0380D , STK0380F , STK730F , STK830D , STK830F , STK830P , SUN0260D , IRF530 , SUN0460D , SUN0460F , SUN0460I2 , SUN0465F , SUN0465I2 , SUN0550D , SUN0550F , SUN0760F .
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