SUN0465I2
MOSFET. Datasheet pdf. Equivalent
Type Designator: SUN0465I2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 54
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3
Ohm
Package:
I2-PAK
SUN0465I2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUN0465I2
Datasheet (PDF)
..1. Size:456K auk
sun0465i2.pdf 
SUN0465I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.3 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.7pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0465I2 SUN0465 I2-PA
7.1. Size:516K auk
sun0465f.pdf
SUN0465F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.3 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.7pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0465F SUN0465 TO-
8.1. Size:444K auk
sun0460d.pdf
SUN0460D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.1 (Typ.) Low gate charge: Qg=10nC (Typ.) D Low reverse transfer capacitance: Crss=4.5pF (Typ.) RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SUN0460D SUN0460 TO
8.2. Size:516K auk
sun0460f.pdf
SUN0460F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.1 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0460F SUN0460 TO-
8.3. Size:457K auk
sun0460i2.pdf
SUN0460I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.1 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0460I2 SUN0460 I2-PA
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