All MOSFET. SUN1060I2 Datasheet

 

SUN1060I2 Datasheet and Replacement


   Type Designator: SUN1060I2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: I2-PAK
 

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SUN1060I2 Datasheet (PDF)

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SUN1060I2

SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=0.6 (Typ.) Low gate charge: Qg=27nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN1060I2 SUN1060 I2-PA

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SUN1060I2

SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=0.6 (Typ.) Low gate charge: Qg=27nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN1060F SUN1060 TO

Datasheet: SUN0465I2 , SUN0550D , SUN0550F , SUN0760F , SUN0760I2 , SUN0765F , SUN0765I2 , SUN1060F , STP65NF06 , 2N7002B , 2N7002KU , SNN01Z10D , SNN01Z10Q , SNN01Z60Q , SNN0310Q , SNN0630Q , SNN2515D .

History: HM4449 | WSG02P06 | HM4412A | AONT32136C | RF6E045AJ | KTK5131E | AO6401-HF

Keywords - SUN1060I2 MOSFET datasheet

 SUN1060I2 cross reference
 SUN1060I2 equivalent finder
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