SUN1060I2 Specs and Replacement
Type Designator: SUN1060I2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 154 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: I2-PAK
SUN1060I2 substitution
- MOSFET ⓘ Cross-Reference Search
SUN1060I2 datasheet
sun1060i2.pdf
SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=0.6 (Typ.) Low gate charge Qg=27nC (Typ.) Low reverse transfer capacitance Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN1060I2 SUN1060 I2-PA... See More ⇒
sun1060f.pdf
SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance RDS(on)=0.6 (Typ.) Low gate charge Qg=27nC (Typ.) Low reverse transfer capacitance Crss=4.9pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN1060F SUN1060 TO... See More ⇒
Detailed specifications: SUN0465I2, SUN0550D, SUN0550F, SUN0760F, SUN0760I2, SUN0765F, SUN0765I2, SUN1060F, IRFZ46N, 2N7002B, 2N7002KU, SNN01Z10D, SNN01Z10Q, SNN01Z60Q, SNN0310Q, SNN0630Q, SNN2515D
Keywords - SUN1060I2 MOSFET specs
SUN1060I2 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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