SNN01Z10D MOSFET Datasheet: N-Ch, 100V, 1A. Full specification with pinout and replacement list

SNN01Z10D Specs and Replacement

Type Designator: SNN01Z10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-252

SNN01Z10D substitution

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SNN01Z10D datasheet

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SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features Logic level gate drive Max. RDS(ON) = 0.24 at VGS = 10V, ID = 0.5A D Low RDS(on) provides higher efficiency ESD protected 2000V (HBM 1000V) Halogen free and RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SNN01Z10D SNN01Z1... See More ⇒

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SN Z10Q NN01Z Q Logic Le ower MOSFE evel N-Ch Po ET L evel Ga plicatio Logic Le ate Drive App on Fe eatures Logic level e l gate drive Max. RDS(ON = 0.24 at VGS = 10V, ID = 0.5A N) Low RDS(on) provides hi ency igher efficie D ESD protec V (HBM 10 cted 2000V 000V) Halogen fr HS complian ree and RoH nt device G G D Or nformatio rderin... See More ⇒

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SN Z60Q NN01Z Q Logic Le ower MOSFE evel N-Ch Po ET L evel Ga plicatio Logic Le ate Drive App on Fe eatures Logic level e l gate drive Max. RDS(ON = 135m a V at VGS = 10V, ID = 0.5A N) Low RDS(on) provides hi ency igher efficie D ESD protec V (HBM 500 cted 1000V 0V) Halogen fr HS complian ree and RoH nt device G G D Or nformatio rde... See More ⇒

Detailed specifications: SUN0760F, SUN0760I2, SUN0765F, SUN0765I2, SUN1060F, SUN1060I2, 2N7002B, 2N7002KU, IRF9640, SNN01Z10Q, SNN01Z60Q, SNN0310Q, SNN0630Q, SNN2515D, SNN3515D, SNN4010D, SNN5010D