SNN01Z60Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: SNN01Z60Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 69
nS
Cossⓘ -
Output Capacitance: 28
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135
Ohm
Package:
SOT-223
SNN01Z60Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SNN01Z60Q
Datasheet (PDF)
..1. Size:606K auk
snn01z60q.pdf 
SN Z60QNN01Z Q Logic Le ower MOSFEevel N-Ch Po ET L evel Ga plicatioLogic Le ate Drive App on Feeatures Logic level e l gate drive Max. RDS(ON = 135m a Vat VGS = 10V, ID = 0.5A N) Low RDS(on) provides hi ency igher efficieD ESD protec V (HBM 500cted: 1000V 0V) Halogen fr HS complianree and RoH nt device G G D Or nformatiorde
8.1. Size:357K auk
snn01z10d.pdf
SNN01Z10D Logic Level N-Ch Power MOSFET Logic Level Gate Drive Application Features Logic level gate drive Max. RDS(ON) = 0.24 at VGS = 10V, ID = 0.5A D Low RDS(on) provides higher efficiency ESD protected: 2000V (HBM 1000V) Halogen free and RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SNN01Z10D SNN01Z1
8.2. Size:605K auk
snn01z10q.pdf
SN Z10QNN01Z Q Logic Le ower MOSFEevel N-Ch Po ET L evel Ga plicatioLogic Le ate Drive App on Feeatures Logic level e l gate drive Max. RDS(ON = 0.24 at VGS = 10V, ID = 0.5A N) Low RDS(on) provides hi ency igher efficieD ESD protec V (HBM: 10cted: 2000V 000V) Halogen fr HS complianree and RoH nt device G G D Or nformatiorderin
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