SNN0630Q Datasheet and Replacement
Type Designator: SNN0630Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT-223
SNN0630Q substitution
SNN0630Q Datasheet (PDF)
snn0630q.pdf

SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package S
snn060l10nl.pdf

SNN060L10NL N-Channel Trench MOSFET 100V N-channel Power MOSFETs Features Extremely low On-state resistance Excellent Q * R product (FOM) g DS(on) Advanced trench process technology Halogen free available and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNN060L10NL N060L10 TESOP-8 (DFN5x6) (DFN 5x6) Marking Informati
snn060l10f.pdf

SNN060L10F N-channel Trench MOSFET Features Extremely low On-state resistance Excellent QgxRDS(on) product (FoM) Advanced trench process technology Halogen-free & RoHS compliant device Applications Synchronous Rectification for AC/DC Quick Charger G D S Battery management UPS (Uninterruptible Power Supply) TO-220F-3L Ordering Information
Datasheet: SUN1060F , SUN1060I2 , 2N7002B , 2N7002KU , SNN01Z10D , SNN01Z10Q , SNN01Z60Q , SNN0310Q , 2SK3918 , SNN2515D , SNN3515D , SNN4010D , SNN5010D , STK0602U , STK5006P , STK7002 , STK7006P .
History: SMN03T80I | IRFR812TRPBF | WSP4409 | NCEP12T12D | SI5858DU | HSM4204 | NP35N04YLG
Keywords - SNN0630Q MOSFET datasheet
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History: SMN03T80I | IRFR812TRPBF | WSP4409 | NCEP12T12D | SI5858DU | HSM4204 | NP35N04YLG



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