All MOSFET. SNN0630Q Datasheet

 

SNN0630Q Datasheet and Replacement


   Type Designator: SNN0630Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT-223
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SNN0630Q Datasheet (PDF)

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SNN0630Q

SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package S

 9.1. Size:728K  auk
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SNN0630Q

SNN060L10NL N-Channel Trench MOSFET 100V N-channel Power MOSFETs Features Extremely low On-state resistance Excellent Q * R product (FOM) g DS(on) Advanced trench process technology Halogen free available and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNN060L10NL N060L10 TESOP-8 (DFN5x6) (DFN 5x6) Marking Informati

 9.2. Size:864K  auk
snn060l10f.pdf pdf_icon

SNN0630Q

SNN060L10F N-channel Trench MOSFET Features Extremely low On-state resistance Excellent QgxRDS(on) product (FoM) Advanced trench process technology Halogen-free & RoHS compliant device Applications Synchronous Rectification for AC/DC Quick Charger G D S Battery management UPS (Uninterruptible Power Supply) TO-220F-3L Ordering Information

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History: VBNC1303 | IRFS4010PBF

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