SUM201MN MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM201MN
Marking Code: SUM201
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: DFN-8
SUM201MN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM201MN Datasheet (PDF)
sum201mn.pdf
SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
sum201mn.pdf
SUM201MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with aPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET portab
sum202mn.pdf
SUM202MNP-Channel MOSFET + PNP BJTIntegrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 8 This integrated device represents a new level of safety andboard-space reduction by combining the 20V P-Channel FET with a1 PNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredMOSFET
Datasheet: STJ004SF , STJ009 , STK001SF , STK003SF , STK004SF , SUF1002 , SUF2001 , SUF3001 , IRFP460 , SUM202MN , 8N90 , 9N90 , 10N90 , 11N90 , 12N90 , 9N95 , 9N100 .
History: SWMI4N65D
History: SWMI4N65D
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