12N90 Datasheet and Replacement

UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTCs advanced technology to provide customers withplanar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can with

IXFH 12N90Q VDSS = 900 VHiPerFETTMIXFT 12N90Q ID25 = 12 APower MOSFETsRDS(on) = 0.9 WQ ClassN-Channel Enhancement Modetrr 200 nsAvalanche RatedLow Qg, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM Transient 30 VID25 TC

HiPerFETTMIXFH 12N90Q VDSS = 900 VPower MOSFETsIXFT 12N90Q ID25 = 12 A IXFX 12N90Q RDS(on) = 0.9 Q ClassN-Channel Enhancement Mode trr 200 ns Avalanche RatedLow Qg, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M

HiPerFASTTM IGBTIXGH 12N90C VCES = 900 VLightspeedTM Series IXGX 12N90C IC25 = 24 AVCES(sat) = 3.0 Vtfi(typ) = 70 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 APLUS 247 (IXGX)ICM TC = 25

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

HiPerFASTTM IGBTIXGH 12N90C VCES = 900 VLightspeedTM Series IXGX 12N90C IC25 = 24 AVCES(sat) = 3.0 Vtfi(typ) = 70 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCEIC25 TC = 25C24 AIC90 TC = 90C12 APLUS 247 (IXGX)ICM TC = 25

Preliminary Technical InformationIXFH12N90P VDSS = 900VPolarTM Power MOSFETIXFV12N90P ID25 = 12AHiPerFETTM RDS(on) 900m IXFV12N90PS trr 300nsN-Channel Enhancement ModeAvalanche RatedPLUS220 (IXFV)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 900 VD (TAB)VDGR TJ

PTF12N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 900V 750m 12A RDS(ON),typ.=750 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder G High Efficiency SMPS D S Ordering Information Part Number Package Brand TO-247 Package PT