All MOSFET. 12N90 Datasheet

 

12N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 225 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 130 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO-230_TO-220F1

12N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N90 Datasheet (PDF)

1.1. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

12N90
12N90

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

1.2. ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf Size:299K _ixys

12N90
12N90



 1.3. ixfh12n90p ixfv12n90p-s.pdf Size:179K _ixys

12N90
12N90

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM ? ? RDS(on) ? ? ? 900m? ? ? IXFV12N90PS ? ? ? trr ? ? 300ns ? ? N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25C to 150C 900 V D (TAB) VDGR TJ = 25C to 150C, RGS = 1M? 900

1.4. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

12N90
12N90

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

 1.5. ixfx12n90q.pdf Size:143K _ixys

12N90
12N90

HiPerFETTM IXFH 12N90Q VDSS = 900 V Power MOSFETs IXFT 12N90Q ID25 = 12 A Ω Ω IXFX 12N90Q RDS(on) = 0.9 Ω Ω Ω Q Class N-Channel Enhancement Mode ≤ ≤ trr ≤ 200 ns ≤ ≤ Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 M

1.6. 12n90.pdf Size:254K _utc

12N90
12N90

UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

1.7. ixgh12n90c.pdf Size:141K _igbt

12N90
12N90

HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A PLUS 247 (IXGX) ICM TC = 25°

1.8. ixgx12n90c.pdf Size:141K _igbt_a

12N90
12N90

HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A PLUS 247 (IXGX) ICM TC = 25°

1.9. sdf12n90.pdf Size:155K _solitron

12N90



Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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