All MOSFET. 2N90 Datasheet

 

2N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 5.6 Ohm

Package: TO-220_TO-262_TO-251_TO-252_TO-220F_TO-220F1

2N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N90 Datasheet (PDF)

1.1. hfp2n90.pdf Size:212K _update_mosfet

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2N90

Feb 2014 BVDSS = 900 V RDS(on) typ HFP2N90 ID = 2.2 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower

1.2. hfs2n90.pdf Size:202K _update_mosfet

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2N90

Feb 2014 BVDSS = 900 V RDS(on) typ HFS2N90 ID = 2.2 A 900V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area

 1.3. hfd2n90.pdf Size:246K _update_mosfet

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2N90

Feb 2014 BVDSS = 900 V RDS(on) typ HFD2N90/HFU2N90 ID = 2.0 A 900V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD2N90 HFU2N90 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.)

1.4. fqpf2n90.pdf Size:726K _fairchild_semi

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2N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.4A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has be

 1.5. fqp2n90.pdf Size:744K _fairchild_semi

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2N90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.2A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially

1.6. fqu2n90tu.pdf Size:841K _fairchild_semi

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2N90

January 2009 QFET® FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi

1.7. fqb2n90tm.pdf Size:754K _fairchild_semi

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2N90

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technolo

1.8. fqi2n90tu.pdf Size:754K _fairchild_semi

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2N90

April 2000 TM QFET QFET QFET QFET FQB2N90 / FQI2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.2A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technolo

1.9. fqu2n90.pdf Size:1291K _fairchild_semi

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2N90

January 2014 FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.85 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 12 nC) MOSFET technology has been especiall

1.10. fqd2n90 fqu2n90.pdf Size:841K _fairchild_semi

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2N90

January 2009 QFET FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 ? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored

1.11. fqd2n90tf fqd2n90tm.pdf Size:841K _fairchild_semi

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January 2009 QFET® FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.7A, 900V, RDS(on) = 7.2 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi

1.12. sss2n90a.pdf Size:505K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 7.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.13. ssp2n90a.pdf Size:934K _samsung

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Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 7.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area ? Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.14. ixgr32n90b2d1.pdf Size:199K _ixys

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2N90

Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 M? 900 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25OC47 A ISOLATED TAB E

1.15. ixgh32n90b2 ixgt32n90b2.pdf Size:202K _ixys

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Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C (limited by leads) 64 A TO-26

1.16. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

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VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

1.17. ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf Size:299K _ixys

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1.18. ixfh12n90p ixfv12n90p-s.pdf Size:179K _ixys

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Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM ? ? RDS(on) ? ? ? 900m? ? ? IXFV12N90PS ? ? ? trr ? ? 300ns ? ? N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25C to 150C 900 V D (TAB) VDGR TJ = 25C to 150C, RGS = 1M? 900

1.19. ixgh32n90b2d1 ixgt32n90b2d1.pdf Size:219K _ixys

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Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E

1.20. ixfk32n90p ixfx32n90p.pdf Size:124K _ixys

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Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P Ω RDS(on) < 300mΩ Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 900 V S VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V Tab VGSS Continuous ±30 V VGSM Tr

1.21. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

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IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

1.22. ixfb52n90p.pdf Size:121K _ixys

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VDSS = 900V IXFB52N90P PolarTM Power MOSFET ID25 = 52A HiPerFETTM ? ? RDS(on) ? ? ? 160m? ? ? ? ? ? trr ? ? 300ns ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V VGSS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25

1.23. ixfn52n90p.pdf Size:113K _ixys

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Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFN52N90P ID25 = 43A HiPerFETTM ? ? RDS(on) ? ? ? 160m? ? ? ? ? N-Channel Enhancement Mode ? trr ? ? 300ns ? ? Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25C to 150C 900 V G VDGR TJ = 25C to 150C, RGS = 1M? 900 V VGSS Continuous 3

1.24. ixfx12n90q.pdf Size:143K _ixys

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HiPerFETTM IXFH 12N90Q VDSS = 900 V Power MOSFETs IXFT 12N90Q ID25 = 12 A Ω Ω IXFX 12N90Q RDS(on) = 0.9 Ω Ω Ω Q Class N-Channel Enhancement Mode ≤ ≤ trr ≤ 200 ns ≤ ≤ Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 M

1.25. 12n90.pdf Size:254K _utc

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UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

1.26. 2n90.pdf Size:257K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 TO-252 ? DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a 1 minimum on-state resistance and superior switching performance. It TO-251 also can withsta

1.27. ixgh12n90c.pdf Size:141K _igbt

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HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A PLUS 247 (IXGX) ICM TC = 25°

1.28. ixgh32n90b2d1.pdf Size:217K _igbt

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2N90

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient

1.29. ixgh32n90b2.pdf Size:199K _igbt

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Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads)

1.30. ixgr32n90b2d1.pdf Size:195K _igbt_a

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Advance Technical Information VCES = 900 V IXGR 32N90B2D1 HiPerFASTTM IGBT IC25 = 47 A with Fast Diode VCE(sat) = 2.9 V tfi typ = 150 ns Electrically Isolated Base Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25OC47 A ISOLATED T

1.31. ixgx12n90c.pdf Size:141K _igbt_a

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HiPerFASTTM IGBT IXGH 12N90C VCES = 900 V LightspeedTM Series IXGX 12N90C IC25 = 24 A VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ±20 V C (TAB) VGEM Transient ±30 V G C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A PLUS 247 (IXGX) ICM TC = 25°

1.32. ixgt32n90b2d1.pdf Size:217K _igbt_a

2N90
2N90

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient

1.33. ixgt32n90b2.pdf Size:199K _igbt_a

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Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads)

1.34. ap02n90i-hf.pdf Size:92K _a-power

2N90
2N90

AP02N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 900V ▼ Isolation Full Package RDS(ON) 7.2Ω ▼ Fast Switching Characteristics ID 1.9A G ▼ RoHS Compliant & Halogen-Free S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device

1.35. ap02n90j-hf.pdf Size:62K _a-power

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AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 900V D Ў Low On-resistance RDS(ON) 7.2? Ў Fast Switching Characteristics ID 1.9A Ў RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-25

1.36. ap02n90j.pdf Size:162K _a-power

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AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 900V D ▼ Low On-resistance RDS(ON) 7.2Ω ▼ Fast Switching Characteristics ID 1.9A ▼ RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

1.37. ap02n90h.pdf Size:197K _a-power

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AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 900V D ▼ Low On-resistance RDS(ON) 7.2Ω ▼ Fast Switching Characteristics ID 1.9A ▼ RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

1.38. ap02n90h-hf.pdf Size:62K _a-power

2N90
2N90

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 900V D Ў Low On-resistance RDS(ON) 7.2? Ў Fast Switching Characteristics ID 1.9A Ў RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-25

1.39. ap02n90jb.pdf Size:139K _a-power

2N90
2N90

AP02N90JB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 900V D ▼ Fast Switching Characteristic RDS(ON) 7.2Ω ▼ Simple Drive Requirement ID 1.9A ▼ RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

1.40. ap02n90p-hf.pdf Size:57K _a-power

2N90
2N90

AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 900V Ў Low On-resistance RDS(ON) 7.2? Ў Fast Switching Characteristics ID 1.9A Ў RoHS Compliant & Halogen-Free G D TO-220 D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

1.41. ap02n90i.pdf Size:39K _a-power

2N90
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AP02N90I Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 900V Ў Isolation Full Package RDS(ON) 7.2? Ў Fast Switching Characteristics ID 1.9A G Ў RoHS compliant S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device is suited for switch mo

1.42. ap02n90p.pdf Size:157K _a-power

2N90
2N90

AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 900V ▼ Low On-resistance RDS(ON) 7.2Ω ▼ Fast Switching Characteristics ID 1.9A ▼ RoHS Compliant & Halogen-Free G D TO-220 D S Description AP02N90 series are from Advanced Power innovated design and silicon process technology to achieve

1.43. sdf12n90.pdf Size:155K _solitron

2N90



1.44. pj2n9014.pdf Size:100K _promax-johnton

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2N90

PJ2N9014 NPN Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE • High total power dissipation (PT=450mW) TO-92 SOT-23 • High h and good linearity FE • Complementary to PJ2N9015 ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C) Rating Symbol Value Uint Pin : 1. Emitter Pin : 1. Base 2. Base Collector Base Voltage V 50 V 2.Emitter CBO 3. Collector 3.Collector

Datasheet: 8N90 , 9N90 , 10N90 , 11N90 , 12N90 , 9N95 , 9N100 , 1N90 , RFP50N06 , 3N90 , 4N90 , 5N90 , 6N90 , 7N90 , 1N80 , 2N80 , 3N80 .

 
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