4N90 Specs and Replacement
Type Designator: 4N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: TO-220F TO-220F1 TO-220 TO-252 TO-262
4N90 substitution
- MOSFET ⓘ Cross-Reference Search
4N90 datasheet
4n90.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. ... See More ⇒
ste24n90 ste36n50-da ste36n50-dk ste38n60 ste38na50 ste45n50 ste50n40 ste90n25.pdf
TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. VCEO VCEV IC Ptot VCE (sat) @IC / IB ts* tf* Conf. Type (V) (V) (A) (W) (V) (A) (A) ( s) ( s) D ESM2012DV 125 150 120 175 2 100 1 0.9 0.15 A BUT30V 125 200 100 250 1.5 100 10 1.0 0.1 B BUT230V 125 200 200 300 1.9 200 20 1.0 0.1 A BUT32V 300 400 80 250 1.9 40 4 1.9 0.12 D ESM2030DV 300 400 67 150 2.2 56 1.6 2.0 0.35 B BUT2... See More ⇒
stf4n90k5.pdf
STF4N90K5 N-channel 900 V, 1.90 typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF4N90K5 900 V 2.10 4 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications ... See More ⇒
stp4n90k5.pdf
STP4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D TAB STP4N90K5 900 V 2.10 3 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) 3 2 Ultra-low gate charge 1 100% avalanche tested TO-220 Zener-protected Appl... See More ⇒
std4n90k5.pdf
STD4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD4N90K5 900 V 2.10 3 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1 Internal schematic... See More ⇒
fqi4n90.pdf
November 2013 FQI4N90 N-Channel QFET MOSFET 900 V, 4.2 A, 3.3 Description Features This N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC) technology has been especially tai... See More ⇒
ssh4n90.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
fqb4n90tm fqi4n90tu.pdf
October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been es... See More ⇒
fqp4n90c fqpf4n90c.pdf
TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to ... See More ⇒
fqpf4n90.pdf
October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.5A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been especially ... See More ⇒
fqp4n90.pdf
October 2001 TM QFET FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typically 24 nC) planar stripe, DMOS technology. Low Crss ( typically 9.5 pF) This advanced technology has been especially t... See More ⇒
sss4n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.181 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
sss4n90as.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
ssp4n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.181 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
ssp4n90as.pdf
SSP4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒
ssf4n90as.pdf
SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒
ssh4n90as.pdf
SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒
ixyh24n90c3.pdf
Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH24N90C3 GenX3TM IC110 = 24A VCE(sat) 2.7V tfi(typ) = 90ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V G VGEM Transient 30 V C E Tab IC25 TC = 25 ... See More ⇒
ixft24n90p ixfh24n90p.pdf
Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM RDS(on) 420m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒
ixtm4n80 ixtm4n80a ixtm4n90 ixtm4n90a ixtp4n80 ixtp4n80a ixtp4n90 ixtp4n90a.pdf
... See More ⇒
ixyh24n90c3d1.pdf
Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH24N90C3D1 GenX3TM w/Diode IC90 = 24A VCE(sat) 2.7V tfi(typ) = 90ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C, RGE = 1M 900 V VGES Continuous 20 V G VGEM Transient 30 V C E Tab IC25 ... See More ⇒
fqp4n90c fqpf4n90c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
4n90l-tf3t-t 4n90g-tf3t-t 4n90l-tm3-t 4n90g-tm3-t 4n90l-tn3-r 4n90g-tn3-r 4n90l-t3n-t 4n90g-t3n-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also ca... See More ⇒
4n90l-ta3-t 4n90g-ta3-t 4n90l-tf3-t 4n90g-tf3-t 4n90l-tf1-t 4n90g-tf1-t 4n90l-tf2-t 4n90g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also ca... See More ⇒
tsm4n90ci tsm4n90cz.pdf
TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s... See More ⇒
aotf4n90.pdf
AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
jcs4n90va jcs4n90ra jcs4n90sa jcs4n90fa jcs4n90ca.pdf
N R N-CHANNEL MOSFET JCS4N90A MAIN CHARACTERISTICS Package ID 4.0 A VDSS 900 V Rdson Vgs=10V 3.3 -MAX Qg-Typ 14.7nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli... See More ⇒
jcs4n90fh jcs4n90rh jcs4n90vh.pdf
N R N-CHANNEL MOSFET CS J 4N90H Package MAIN CHARACTERISTICS ID 4 4 4A VDSS 900 V Rdson_max 5.5 Vgs=10V Qg-typ 7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge ... See More ⇒
fhf4n90a.pdf
N N-CHANNEL MOSFET FHF4N90A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 900V Crss ( 7.4pF) Low Crss (typical 7.4pF ) Rdson-typ @Vgs=10V 2.6 Fast switching Qg-typ 25.2nC 100% 100% avalanche tested dv/dt Improved dv/... See More ⇒
hfs4n90.pdf
March 2014 BVDSS = 900 V RDS(on) typ HFS4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 30 nC (Typ.) Extended Safe Operating Area ... See More ⇒
hfp4n90.pdf
March 2014 BVDSS = 900 V RDS(on) typ HFP4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 30 nC (Typ.) Extended Safe Operating Area Low... See More ⇒
cs64n90f cs64n90 cs64n90b.pdf
CS64N90 Pb CS64N90 Pb Free Plating Product 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 (TO-220 HeatSink) CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea... See More ⇒
dk64n90f dk64n90 dk64n90b.pdf
DK64N90 Pb DK64N90 Pb Free Plating Product N-Channel Trench Process Power MOSFET Transistors General Description DK64N90 (TO-220 HeatSink) DK64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G ... See More ⇒
tmp4n90 tmpf4n90.pdf
TMP4N90/TMPF4N90 TMP4N90G/TMPF4N90G VDSS = 990 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 4.0 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHS TMP4N90G / TMPF4N90G TO-220 / T... See More ⇒
tsf4n90m.pdf
TSF4N90M 900V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s Drain-Source breakdown voltage advanced planar stripe DMOS technology. BVDSS=900V (Min.) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Low gate charge Qg=22nC (Typ.) performance, and withstand high ... See More ⇒
wml4n90d1 wmk4n90d1 wmm4n90d1.pdf
WML4N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9 N-ch Power MOSFET Description TO-220F TO-220 TO-263 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G D S G S D S Features Typ.R =2.9... See More ⇒
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf
WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayon s 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S ... See More ⇒
cs4n90f cs4n90p.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N90F, CS4N90P 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N90F TO-220F CS4N90F CS4N9... See More ⇒
fir4n90fg.pdf
FIR4N90FG 900V N-Channel MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=17nC (Typ.). BVDSS=900V,ID=4A G RDS(on) 3.4 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembl... See More ⇒
hm4n90i.pdf
HM4N90I General Description VDSS 900 V HM4N90I, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization ... See More ⇒
aotf4n90.pdf
isc N-Channel MOSFET Transistor AOTF4N90 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =3.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒
Detailed specifications: 10N90, 11N90, 12N90, 9N95, 9N100, 1N90, 2N90, 3N90, IRFB4115, 5N90, 6N90, 7N90, 1N80, 2N80, 3N80, 4N80, 5N80
Keywords - 4N90 MOSFET specs
4N90 cross reference
4N90 equivalent finder
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4N90 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IXFH14N80 | IRFB23N15DPBF | ME12P04 | FDB12N50TM | IXFK26N90 | IRFB33N15DPBF | IRFB23N20DPBF
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