All MOSFET. 4N90 Datasheet

 

4N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 4N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm

Package: TO-220F_TO-220F1_TO-220_TO-252_TO-262

4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

4N90 Datasheet (PDF)

1.1. tmp4n90 tmpf4n90.pdf Size:333K _update

4N90
4N90

TMP4N90/TMPF4N90 TMP4N90G/TMPF4N90G VDSS = 990 V @Tjmax Features ID = 4A  Low gate charge RDS(ON) = 4.0 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP4N90 / TMPF4N90 TO-220 / TO-220F TMP4N90 / TMPF4N90 RoHS TMP4N90G / TMPF4N90G TO-220 / T

1.2. sdf4n90.pdf Size:166K _upd-mosfet

4N90



 1.3. ssh4n90.pdf Size:165K _upd-mosfet

4N90
4N90

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.4. hfp4n90.pdf Size:202K _update_mosfet

4N90
4N90

March 2014 BVDSS = 900 V RDS(on) typ HFP4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Low

 1.5. cs64n90f cs64n90 cs64n90b.pdf Size:896K _update_mosfet

4N90
4N90

CS64N90 ® Pb CS64N90 Pb Free Plating Product 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 (TO-220 HeatSink) CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea

1.6. tsm4n90ci tsm4n90cz.pdf Size:395K _update_mosfet

4N90
4N90

 TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

1.7. hfs4n90.pdf Size:191K _update_mosfet

4N90
4N90

March 2014 BVDSS = 900 V RDS(on) typ HFS4N90 ID = 4.0 A 900V N-Channel MOSFET TO-220F FEATURES 1 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area

1.8. fqp4n90.pdf Size:632K _fairchild_semi

4N90
4N90

October 2001 TM QFET FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially t

1.9. fqpf4n90.pdf Size:622K _fairchild_semi

4N90
4N90

October 2001 TM QFET FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been especially

1.10. fqb4n90tm.pdf Size:644K _fairchild_semi

4N90
4N90

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been es

1.11. fqi4n90.pdf Size:821K _fairchild_semi

4N90
4N90

November 2013 FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 24 nC) technology has been especially tai

1.12. fqp4n90c fqpf4n90c.pdf Size:899K _fairchild_semi

4N90
4N90

TM QFET FQP4N90C/FQPF4N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4A, 900V, RDS(on) = 4.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 17nC) planar stripe, DMOS technology. Low Crss ( typical 5.6 pF) This advanced technology has been especially tailored to Fast switch

1.13. fqi4n90tu.pdf Size:644K _fairchild_semi

4N90
4N90

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been es

1.14. ssp4n90a.pdf Size:552K _samsung

4N90
4N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.15. ssp4n90as.pdf Size:206K _samsung

4N90
4N90

SSP4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

1.16. ssh4n90as.pdf Size:208K _samsung

4N90
4N90

SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

1.17. sss4n90a.pdf Size:496K _samsung

4N90
4N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.18. ssf4n90as.pdf Size:206K _samsung

4N90
4N90

SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

1.19. sss4n90as.pdf Size:852K _samsung

4N90
4N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.20. ixtm4n80 ixtm4n80a ixtm4n90 ixtm4n90a ixtp4n80 ixtp4n80a ixtp4n90 ixtp4n90a.pdf Size:64K _ixys

4N90



1.21. ixft24n90p ixfh24n90p.pdf Size:122K _ixys

4N90
4N90

Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM ? ? RDS(on) ? 420m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 300ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C, RGS = 1M? 900 V TAB VGSS Continuous 30

1.22. 4n90.pdf Size:206K _utc

4N90
4N90

UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It

1.23. ixyh24n90c3.pdf Size:168K _igbt_a

4N90
4N90

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH24N90C3 GenX3TM IC110 = 24A ≤ ≤ VCE(sat) ≤ 2.7V ≤ ≤ tfi(typ) = 90ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 900 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 900 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Tab IC25 TC = 25°

1.24. ixyh24n90c3d1.pdf Size:325K _igbt_a

4N90
4N90

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH24N90C3D1 GenX3TM w/Diode IC90 = 24A ≤ ≤ VCE(sat) ≤ 2.7V ≤ ≤ tfi(typ) = 90ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 900 V VGES Continuous ±20 V G VGEM Transient ±30 V C E Tab IC25

1.25. aotf4n90.pdf Size:185K _aosemi

4N90
4N90

AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary VDS 1000V@150℃ The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 3.6Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche ca

1.26. sdf4n90.pdf Size:166K _solitron

4N90



Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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