All MOSFET. 2N80 Datasheet

 

2N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO-251_TO-252_TO-220F

2N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N80 Datasheet (PDF)

1.1. mcu02n80.pdf Size:561K _update

2N80
2N80



1.2. stf2n80k5.pdf Size:1626K _update

2N80
2N80

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

 1.3. stl2n80k5.pdf Size:1051K _update

2N80
2N80

STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A Zener-protected MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV Datasheet - production data Features Order code VDS RDS(on)max. ID STL2N80K5 800 V 4.5 Ω 1.5 A • Industry’s lowest RDS(on) 1 • Industry’s best figure of merit (FoM) 2 3 • Ultra low gate charge 4 • 100% avalanche tested PowerFLAT™ 5x6 VHV • Zener-

1.4. std2n80k5.pdf Size:1626K _upd

2N80
2N80

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

 1.5. stp2n80k5 stu2n80k5.pdf Size:1626K _upd

2N80
2N80

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

1.6. tman12n80az.pdf Size:505K _upd-mosfet

2N80
2N80

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 800V 12A < 0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMAN12N80AZ TO-3PN TMAN12N80AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80AZ Unit Drain-Source Voltage V

1.7. tman12n80z.pdf Size:502K _upd-mosfet

2N80
2N80

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 800V 12A <0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN12N80Z TO-3PN TMAN12N80Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80Z Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VG

1.8. stk2n80.pdf Size:316K _st

2N80
2N80

STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STK2N80 800 V < 7 ? 2.1 A TYPICAL R = 5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW INPUT CAPACITANCE 1 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED CHARACTERIZATION SOT-82 SOT-194 APPLICATIONS (option) HIGH CURRENT, HIGH SPEED SWI

1.9. stp2n80.pdf Size:371K _st

2N80
2N80

STP2N80 STP2N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP2N80 800 V < 7 ? 2.4 A STP2N80FI 800 V < 7 ? 1.5 A TYPICAL R = 5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS

1.10. std2n80-.pdf Size:47K _st

2N80
2N80

STD2NB80-1 N - CHANNEL 800V - 4.6? - 1.9A - IPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V < 6.5 ? 1.9 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 2 SALES OFFICE 1 IPAK DESCRIPTION TO-251 Using the latest high vol

1.11. fqp2n80.pdf Size:649K _fairchild_semi

2N80
2N80

September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fas

1.12. fqd2n80 fqu2n80.pdf Size:724K _fairchild_semi

2N80
2N80

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to

1.13. fqb2n80tm.pdf Size:659K _fairchild_semi

2N80
2N80

September 2000 TM QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi

1.14. fqpf2n80ydtu.pdf Size:966K _fairchild_semi

2N80
2N80

July 2013 FQPF2N80YDTU N-Channel QFET® MOSFET 8 0 V, 1.5 A, Ω Features Description This N-Channel enhancement mode power MOSFET is • 1.5 A, 8 0 V, RDS(on)= Ω(Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 5.5 pF) MOSFET technolog

1.15. fqi2n80tu.pdf Size:321K _fairchild_semi

2N80

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration: Figure 1.0 Packaging Description: 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

1.16. fqpf2n80.pdf Size:619K _fairchild_semi

2N80
2N80

September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fa

1.17. fqu2n80 fqu2n80tu.pdf Size:724K _fairchild_semi

2N80
2N80

January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

1.18. fqd2n80tf fqd2n80tm.pdf Size:724K _fairchild_semi

2N80
2N80

January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

1.19. ssu2n80a.pdf Size:498K _samsung

2N80
2N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 ? (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.20. sss2n80a.pdf Size:914K _samsung

2N80
2N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.21. ssp2n80a.pdf Size:931K _samsung

2N80
2N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

1.22. spd02n80c3 rev2.91.pdf Size:485K _infineon

2N80
2N80

SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 2.7 ? DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge PG-TO252-3 Ultra low effective capacitances C

1.23. spa02n80c3 rev2.91 a.pdf Size:437K _infineon

2N80
2N80

SPA02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 2.7 ? DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isol

1.24. spp02n80c3 rev2.91.pdf Size:444K _infineon

2N80
2N80

SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 2.7 ? DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.25. ixta2n80 ixtp2n80.pdf Size:113K _ixys

2N80
2N80

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 ? ? RDS(on) = 6.2 ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse

1.26. ixfk32n80p ixfx32n80p.pdf Size:161K _ixys

2N80
2N80

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Transient 40 V G D

1.27. ixfr32n80p.pdf Size:149K _ixys

2N80
2N80

PolarHVTM HiPerFET VDSS = 800 V IXFR 32N80P ID25 = 20 A Power MOSFET ? ? RDS(on) ? 290 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 250 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800

1.28. 2n80.pdf Size:228K _utc

2N80
2N80

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

1.29. 12n80.pdf Size:232K _utc

2N80
2N80

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

1.30. khb1d2n80d i.pdf Size:966K _kec

2N80
2N80

KHB1D2N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ switching mode p

1.31. cs2n80 a3hy.pdf Size:664K _crhj

2N80
2N80

Silicon N-Channel Power MOSFET R ○ CS2N80 A3HY General Description: VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.32. cm2n80f.pdf Size:127K _jdsemi

2N80

R C28F MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆800V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 2 .主要特点 1 开关速度快 2 通态电阻小,输入电容

1.33. cm2n80c.pdf Size:129K _jdsemi

2N80

R C28C MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆800V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小

Datasheet: 1N90 , 2N90 , 3N90 , 4N90 , 5N90 , 6N90 , 7N90 , 1N80 , IRF730 , 3N80 , 4N80 , 5N80 , 6N80 , 7N80 , 8N80 , 9N80 , 10N80 .

 
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