All MOSFET. 2N80 Datasheet

 

2N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 4.8 Ohm

Package: TO-251_TO-252_TO-220F

2N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N80 Datasheet (PDF)

1.1. mcu02n80.pdf Size:561K _update

2N80
2N80



1.2. stf2n80k5.pdf Size:1626K _update

2N80
2N80

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

 1.3. stl2n80k5.pdf Size:1051K _update

2N80
2N80

STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A Zener-protected MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV Datasheet - production data Features Order code VDS RDS(on)max. ID STL2N80K5 800 V 4.5 Ω 1.5 A • Industry’s lowest RDS(on) 1 • Industry’s best figure of merit (FoM) 2 3 • Ultra low gate charge 4 • 100% avalanche tested PowerFLAT™ 5x6 VHV • Zener-

1.4. std2n80k5.pdf Size:1626K _upd

2N80
2N80

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

 1.5. stp2n80k5 stu2n80k5.pdf Size:1626K _upd

2N80
2N80

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 Ω 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB • TO-220 worldwide best RDS

1.6. tman12n80az.pdf Size:505K _upd-mosfet

2N80
2N80

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 800V 12A < 0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMAN12N80AZ TO-3PN TMAN12N80AZ RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80AZ Unit Drain-Source Voltage V

1.7. tman12n80z.pdf Size:502K _upd-mosfet

2N80
2N80

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 800V 12A <0.65W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN12N80Z TO-3PN TMAN12N80Z RoHS Absolute Maximum Ratings Parameter Symbol TMAN12N80Z Unit Drain-Source Voltage VDS 800 V Gate-Source Voltage VG

1.8. kqb2n80.pdf Size:399K _update_mosfet

2N80
2N80

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type I

1.9. stk2n80.pdf Size:316K _st

2N80
2N80

STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STK2N80 800 V < 7 ? 2.1 A TYPICAL R = 5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW INPUT CAPACITANCE 1 3 LOW GATE CHARGE 2 1 APPLICATION ORIENTED CHARACTERIZATION SOT-82 SOT-194 APPLICATIONS (option) HIGH CURRENT, HIGH SPEED SWI

1.10. stp2n80.pdf Size:371K _st

2N80
2N80

STP2N80 STP2N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP2N80 800 V < 7 ? 2.4 A STP2N80FI 800 V < 7 ? 1.5 A TYPICAL R = 5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS

1.11. std2n80-.pdf Size:47K _st

2N80
2N80

STD2NB80-1 N - CHANNEL 800V - 4.6? - 1.9A - IPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V < 6.5 ? 1.9 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 2 SALES OFFICE 1 IPAK DESCRIPTION TO-251 Using the latest high vol

1.12. fqp2n80.pdf Size:649K _fairchild_semi

2N80
2N80

September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fas

1.13. fqd2n80 fqu2n80.pdf Size:724K _fairchild_semi

2N80
2N80

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to

1.14. fqb2n80tm.pdf Size:659K _fairchild_semi

2N80
2N80

September 2000 TM QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especi

1.15. fqpf2n80ydtu.pdf Size:966K _fairchild_semi

2N80
2N80

July 2013 FQPF2N80YDTU N-Channel QFET® MOSFET 8 0 V, 1.5 A, Ω Features Description This N-Channel enhancement mode power MOSFET is • 1.5 A, 8 0 V, RDS(on)= Ω(Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 5.5 pF) MOSFET technolog

1.16. fqi2n80tu.pdf Size:321K _fairchild_semi

2N80

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration: Figure 1.0 Packaging Description: 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

1.17. fqpf2n80.pdf Size:619K _fairchild_semi

2N80
2N80

September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored to Fa

1.18. fqu2n80 fqu2n80tu.pdf Size:724K _fairchild_semi

2N80
2N80

January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

1.19. fqd2n80tf fqd2n80tm.pdf Size:724K _fairchild_semi

2N80
2N80

January 2008 QFET® FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.8A, 800V, RDS(on) = 6.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been especially

1.20. ssu2n80a.pdf Size:498K _samsung

2N80
2N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 ? (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.21. sss2n80a.pdf Size:914K _samsung

2N80
2N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

1.22. ssp2n80a.pdf Size:931K _samsung

2N80
2N80

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

1.23. spd02n80c3 rev2.91.pdf Size:485K _infineon

2N80
2N80

SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 2.7 ? DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge PG-TO252-3 Ultra low effective capacitances C

1.24. spa02n80c3 rev2.91 a.pdf Size:437K _infineon

2N80
2N80

SPA02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 2.7 ? DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isol

1.25. spp02n80c3 rev2.91.pdf Size:444K _infineon

2N80
2N80

SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 2.7 ? DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.26. ixta2n80 ixtp2n80.pdf Size:113K _ixys

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2N80

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 ? ? RDS(on) = 6.2 ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C2 A IDM TC = 25C, pulse

1.27. ixfk32n80p ixfx32n80p.pdf Size:161K _ixys

2N80
2N80

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Transient 40 V G D

1.28. ixfr32n80p.pdf Size:149K _ixys

2N80
2N80

PolarHVTM HiPerFET VDSS = 800 V IXFR 32N80P ID25 = 20 A Power MOSFET ? ? RDS(on) ? 290 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 250 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800

1.29. 2n80.pdf Size:228K _utc

2N80
2N80

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

1.30. 12n80.pdf Size:232K _utc

2N80
2N80

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand

1.31. khb1d2n80d i.pdf Size:966K _kec

2N80
2N80

KHB1D2N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ switching mode p

1.32. cs2n80 a3hy.pdf Size:664K _crhj

2N80
2N80

Silicon N-Channel Power MOSFET R ○ CS2N80 A3HY General Description: VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.33. cm2n80f.pdf Size:127K _jdsemi

2N80

R C28F MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆800V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 2 .主要特点 1 开关速度快 2 通态电阻小,输入电容

1.34. cm2n80c.pdf Size:129K _jdsemi

2N80

R C28C MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆800V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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