2N80 - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy puls

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 1 STD2N80K5 45 W DPAK 3 STF2N80K5 20 W 2 800 V 4.5 2 A 1 STP2N80K5 TAB 45 W TO-220FP STU2N80K5 TAB TO-220 worldwide best RDS

STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STK2N80 800 V

STP2N80 STP2N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP2N80 800 V

STL2N80K5 N-channel 800 V, 3.7 typ., 1.5 A Zener-protected MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV Datasheet - production data Features Order code VDS RDS(on)max. ID STL2N80K5 800 V 4.5 1.5 A Industry s lowest RDS(on) 1 Industry s best figure of merit (FoM) 2 3 Ultra low gate charge 4 100% avalanche tested PowerFLAT 5x6 VHV Zener-

STD2NB80-1 N - CHANNEL 800V - 4.6 - 1.9A - IPAK PowerMESH MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V

I2-PAK Tube Packing Data I2-PAK Tube Packing Configuration Figure 1.0 Packaging Description 50 units per Tube I2-PAK parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative plastic bubble sheet, barcode labeled, and placed inside a box made of recyclable corrugated paper. One box con

September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tail

September 2000 TM QFET FQP2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailo

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially

September 2000 TM QFET FQB2N80 / FQI2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especi

July 2013 FQPF2N80YDTU N-Channel QFET MOSFET 8 0 V, 1.5 A, Features Description This N-Channel enhancement mode power MOSFET is 1.5 A, 8 0 V, RDS(on)= (Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 5.5 pF) MOSFET technolog

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

SPA02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 2.7 DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 2.7 W DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda) Ultra low ga

SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 2.7 DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin

PolarHVTM HiPerFET VDSS = 800 V IXFR 32N80P ID25 = 20 A Power MOSFET RDS(on) 290 m ISOPLUS247TM trr 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 800 V VDGR T

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 12N80-FC Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 TO-220F The UTC 12N80-FC provide excellent R , low gate charge DS(ON) and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 1 FEATURES * R 0.78 @ V =10V, I =6.0A DS(ON) GS D TO-220F1 TO-3P

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withs

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU02N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP02N80 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION The CJP02N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also

KHB1D2N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ switching mode p

Silicon N-Channel Power MOSFET R CS2N80 A3HY General Description VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

R C28F MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1 LD P E C 2 1 2

R C28C MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1 LD P E C 2

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type I

JFPC2N80C JFFM12N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER S

TMAN12N80Z N-channel MOSFET Features BVDSS ID RDS(on)MAX Low gate charge 800V 12A

TMAN12N80AZ N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 12A

WML12N80M3, W 80M3, WM M3 WMN12N8 MM12N80M WMO1 80M3, WM M3 12N80M3, WMP12N8 MK12N80M 800V 0.53 S T V Super Junction Power MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perfo

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N80F, CS12N80V 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N80F TO-220F CS12N80F C

FIR2N80FG 800V N-Channel MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=12nC (Typ.). BVDSS=800V,ID=2A G RDS(on) 6.3 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = W

FIR12N80FG 800V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 45nC (Typ.) BVDSS=800V,ID=12A G D S RDS(on) 1.0 (Max) @VG=10V 100% Avalanche Tested Marking Diagram D G S Y = Year A = Assembly Location WW = Work Week

SFP052N80BI3,SFB049N80BI3 N-MOSFET 80V, 4.4m , 120A Features Product Summary Enhancement Mode VDS 80V Very Low On-Resistance RDS(on) 4.4m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Light Electric Vehicles 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested

SFP085N80DC2,SFB082N80DC2 N-MOSFET 80V, 6.3m , 110A Features Product Summary Extremely low on-resistance RDS(on) VDS 80V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 6.3m Qualified according to JEDEC criteria ID 110A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) S

Enhancement Mode Very Low On-Resistance Fast Switching Motor Control and Drive

Isc N-Channel MOSFET Transistor SPA02N80C3 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S

isc N-Channel MOSFET Transistor SPD02N80C3,ISPD02N80C3 FEATURES Static drain-source on-resistance RDS(on) 2.7 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8