All MOSFET. 6N80 Datasheet

 

6N80 Datasheet and Replacement


   Type Designator: 6N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220 TO-220F TO-220F1
 

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6N80 Datasheet (PDF)

 ..1. Size:194K  utc
6n80.pdf pdf_icon

6N80

UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using1UTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a TO-220Fminimum on-state resistance and superior switching performance. Ita

 ..2. Size:234K  inchange semiconductor
6n80.pdf pdf_icon

6N80

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 6N80FEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION.Switch-mode and resonant-mo

 0.1. Size:263K  1
ssf6n80a.pdf pdf_icon

6N80

SSF6N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 0.2. Size:239K  motorola
mty16n80erev0b.pdf pdf_icon

6N80

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTY16N80E/DDesigner's Data SheetMTY16N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination16 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegr

Datasheet: 5N90 , 6N90 , 7N90 , 1N80 , 2N80 , 3N80 , 4N80 , 5N80 , IRFP260 , 7N80 , 8N80 , 9N80 , 10N80 , 12N80 , 1N70Z , 2N70 , 2N70Z .

Keywords - 6N80 MOSFET datasheet

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