6N80 - описание и поиск аналогов

 ..1. Size:194K  utc
 6n80.pdf 

UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary Power MOSFET 6A, 800V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using 1 UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a TO-220F minimum on-state resistance and superior switching performance. It a

 ..2. Size:234K  inchange semiconductor
 6n80.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 6N80 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) Avalanche Energy Specified Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION. Switch-mode and resonant-mo

 0.1. Size:263K  1
 ssf6n80a.pdf 

SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 0.2. Size:239K  motorola
 mty16n80erev0b.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY16N80E/D Designer's Data Sheet MTY16N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 16 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degr

 0.3. Size:206K  motorola
 mty16n80e.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY16N80E/D Designer's Data Sheet MTY16N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 16 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degr

 0.4. Size:816K  st
 stf6n80k5 stfi6n80k5.pdf 

STF6N80K5, STFI6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT STF6N80K5 800 V 1.6 4.5 A 25 W STFI6N80K5 3 2 1 1 Industry s lowest RDS(on) 2 3 TO-220FP 2 Industry s best figure of merit (FoM) I PAKFP Ultra low gate charge 10

 0.5. Size:1285K  st
 stb6n80k5 std6n80k5 sti6n80k5 stp6n80k5.pdf 

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 N-channel 800 V, 1.3 typ., 4.5 A MDmesh K5 Power MOSFETs in D PAK, DPAK, I PAK and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS RDS(on)max ID PTOT 3 1 3 1 STB6N80K5 DPAK D2PAK STD6N80K5 TAB TAB 800 V 1.6 4.5 A 85 W STI6N80K5 STP6N80K5 3 2 3 2 1 1 Industry s lowest RDS(on) TO-

 0.6. Size:659K  fairchild semi
 fqaf6n80.pdf 

September 2000 TM QFET FQAF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.4A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail

 0.7. Size:664K  fairchild semi
 fqpf6n80.pdf 

September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail

 0.8. Size:1075K  fairchild semi
 fqb6n80 fqi6n80.pdf 

October 2008 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially

 0.9. Size:682K  fairchild semi
 fqb6n80tm.pdf 

September 2000 TM QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especi

 0.10. Size:672K  fairchild semi
 fqp6n80.pdf 

September 2000 TM QFET FQP6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo

 0.11. Size:1001K  fairchild semi
 fqpf6n80t.pdf 

TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to

 0.12. Size:677K  fairchild semi
 fqa6n80.pdf 

September 2000 TM QFET FQA6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailo

 0.13. Size:889K  fairchild semi
 fqp6n80c fqpf6n80c.pdf 

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 0.14. Size:863K  samsung
 ssp6n80a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1. (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb

 0.15. Size:931K  samsung
 ssh6n80as.pdf 

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.16. Size:505K  samsung
 sss6n80a.pdf 

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 0.17. Size:445K  infineon
 spp06n80c3.pdf 

SPP06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 0.18. Size:554K  infineon
 spd06n80c3.pdf 

SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effe

 0.19. Size:478K  infineon
 spa06n80c3.pdf 

SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

 0.20. Size:102K  ixys
 ixth6n80-a ixtm6n80-a.pdf 

VDSS ID25 RDS(on) Standard IXTH / IXTM 6N80 800 V 6 A 1.8 Power MOSFET IXTH / IXTM 6N80A 800 V 6 A 1.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A TO

 0.21. Size:549K  onsemi
 fqpf6n80t.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.22. Size:890K  onsemi
 fqp6n80c fqpf6n80c.pdf 

TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to

 0.23. Size:192K  utc
 6n80l-ta3-t 6n80g-ta3-t 6n80l-tf3-t 6n80g-tf3-t 6n80l-tf1-t 6n80g-tf1-t 6n80l-t2q-t 6n80g-t2q-t.pdf 

UNISONIC TECHNOLOGIES CO., LTD 6N80 Power MOSFET 6.0A, 800V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe 1 TO-220F and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can

 0.24. Size:244K  fuji
 fmh06n80e.pdf 

SPECIFICATION Device Name Power MOSFET Type Name FMH06N80E Spec. No. MS5F07479 Date Jan.-26-2010 APPROVED DATE NAME Fuji Electric Systems Co.,Ltd. Jan./26/ 10 DRAWN CHECKED Jan./26/ 10 MS5F07479 1/16 CHECKED REVISIONS Jan./26/ 10 H04-004-05 This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced,

 0.25. Size:272K  semelab
 ssh6n80.pdf 

 0.26. Size:532K  silikron
 ssf6n80f.pdf 

SSF6N80F Main Product Characteristics VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco

 0.27. Size:423K  silikron
 ssf6n80a6.pdf 

 0.28. Size:478K  silikron
 ssf6n80g.pdf 

SSF6N80G Main Product Characteristics VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 0.29. Size:373K  nell
 6n80a 6n80af.pdf 

RoHS 6N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (6A, 800Volts) DESCRIPTION The Nell 6N80 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw

 0.30. Size:847K  crhj
 cs6n80f a9.pdf 

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.31. Size:675K  crhj
 cs6n80 arh.pdf 

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.32. Size:736K  crhj
 cs6n80 a0h.pdf 

Silicon N-Channel Power MOSFET R CS6N80 A0H General Description VDSS 800 V CS6N80 A0H, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.33. Size:848K  crhj
 cs6n80 a8.pdf 

Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.34. Size:3400K  kexin
 kx6n80f.pdf 

DIP Type MOSFET N-Channel MOSFET KX6N80F Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features VDS (V) = 800V ID = 7 A (VGS = 10V) RDS(ON) 1.9 (VGS = 10V) 0.20 2.76 Low Gate Charge (Typ. 27 nC) 1.47max Fast switching 100% Avalanche Tested 0.20 0.50 D 0.20 0.80 2.54typ 2.54typ G S Absolute Maximum Rating

 0.35. Size:344K  silan
 svf6n80dtr svf6n80k svf6n80mj.pdf 

 0.36. Size:998K  bruckewell
 ms6n80.pdf 

MS6N80 800V N-Channel MOSFET Description The MS6N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic C

 0.37. Size:1426K  samwin
 sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf 

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS 800V TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED

 0.38. Size:802K  samwin
 swd6n80de.pdf 

SW6N80DE N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 800V High ruggedness ID 6A Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 36nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 ESD protected 3 2 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source 1 General Description

 0.39. Size:1303K  samwin
 swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf 

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 BVDSS 800V TO-262 TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED , Charger, SMPS 1.

 0.40. Size:1168K  way-on
 wmo6n80d1 wml6n80d1.pdf 

WMO6N80D1 WML6N80D1 800V 6A 2.5 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G G robust and RoHS compliant. D S S Features Typ.R =2.5 @V =10V DS(on) GS 100%

 0.41. Size:673K  way-on
 wml06n80m3 wmn06n80m3 wmm06n80m3 wmo06n80m3 wmp06n80m3 wmk06n80m3.pdf 

WML06N80M3, W 80M3, WM M3 WMN06N8 MM06N80M WMO0 80M3, WM M3 06N80M3, WMP06N8 MK06N80M 800 Junction ET 0V 1.8 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 0.42. Size:355K  wuxi china
 cs6n80arr-g.pdf 

Silicon N-Channel Power MOSFET R CS6N80 ARR-G General Description VDSS 800 V CS6N80 ARR-G, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.43. Size:847K  wuxi china
 cs6n80fa9.pdf 

Silicon N-Channel Power MOSFET R CS6N80F A9 General Description VDSS 800 V CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 45 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.44. Size:848K  wuxi china
 cs6n80a8.pdf 

Silicon N-Channel Power MOSFET R CS6N80 A8 General Description VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25 ) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.45. Size:675K  wuxi china
 cs6n80arh.pdf 

Silicon N-Channel Power MOSFET R CS6N80 ARH General Description VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.46. Size:465K  cn hmsemi
 hm6n80k.pdf 

HM6N80K General Description VDSS 800 V HM6N80K, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

 0.47. Size:807K  cn scilicon
 sft016n80c3.pdf 

SFT016N80C3 N-MOSFET 80V, 1.3m , 360A Features Product Summary Low on resistance V 80V DS Low gate charge R 1.3m DS(on)typ. Fast switching I 360A D(Silicon Limited) High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC

 0.48. Size:717K  cn scilicon
 sfp036n80c3 sfb034n80c3.pdf 

SFP036N80C3,SFB034N80C3 N-MOSFET 80V, 3m , 120A Features Product Summary Low on resistance V 80V DS Low gate charge R 3m DS(on) typ. Fast switching I 120A D High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and AC/D

 0.49. Size:3988K  cn scilicon
 sfp086n80cc2 sfb083n80cc2.pdf 

SFP086N80CC2, SFB083N80CC2 N-MOSFET 80V, 6.6m , 100A Features Product Summary Extremely low on-resistance RDS(on) VDS 80V Excellent QgxRDS(on) product(FOM) RDS(on) 6.6m Qualified according to JEDEC criteria ID 100A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested

 0.50. Size:7153K  cn scilicon
 sfp120n80a sfb120n80a sfp066n80ac3 sfb063n80ac3.pdf 

SFP120N80A,SFB120N80A SFP066N80AC3,SFB063N80AC3 N-MOSFET 80V, 5.5m , 120A Features Product Summary Enhancement Mode VDS 80V Very Low On-Resistance RDS(on) 5.5m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100

 0.51. Size:3764K  cn scilicon
 sfp049n80c3 sfb046n80c3.pdf 

SFP049N80C3, SFB046N80C3 N-MOSFET 80V, 4.2m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 80V Excellent gate charge x RDS(on) product(FOM) RDS(on) 4.2m ID 120A 100% DVDS Tested Application Motor control and drives 100% Avalanche Tested Battery management 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Av

 0.52. Size:1326K  cn scilicon
 sfp066n80c3 sfb063n80c3.pdf 

SFP066N80C3,SFB063N80C3 N-MOSFET 80V, 5.5m , 105A Features Product Summary Enhancement Mode VDS 80V Very Low On-Resistance RDS(on) 5.5m Fast Switching ID 105A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested Batt

 0.53. Size:247K  inchange semiconductor
 spp06n80c3.pdf 

isc N-Channel MOSFET Transistor SPP06N80C3 ISPP06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO

 0.54. Size:245K  inchange semiconductor
 spd06n80c3.pdf 

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

 0.55. Size:262K  inchange semiconductor
 fqp6n80c.pdf 

isc N-Channel MOSFET Transistor FQP6N80C FEATURES Drain Current I = 22A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

 0.56. Size:232K  inchange semiconductor
 6n80a.pdf 

isc N-Channel MOSFET Transistor 6N80A FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) DS(on) Avalanche Energy Specified Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION. Switch-mode and resonant-mode Power supplies Motor controls

 0.57. Size:228K  inchange semiconductor
 stp6n80k5.pdf