All MOSFET. 2N70K Datasheet

 

2N70K MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N70K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.1 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-252

 2N70K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N70K Datasheet (PDF)

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 2n70k.pdf

2N70K 2N70K

UNISONIC TECHNOLOGIES CO., LTD 2N70K Power MOSFET 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70K is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power

 0.1. Size:718K  utc
 12n70kl-ta3-t 12n70kg-ta3-t 12n70kl-tf1-t 12n70kg-tf1-t 12n70kl-tf2-t 12n70kg-tf2-t 12n70kl-tf3t-t 12n70kg-tf3t-t 12n70kg-tq2-r.pdf

2N70K 2N70K

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo

 0.2. Size:718K  utc
 12n70kl-tf3-t 12n70kg-tf3-t 12n70kl-tm3-t 12n70kg-tm3-t 12n70kl-tn3-r 12n70kg-tn3-r 12n70kl-tq2-t 12n70kg-tq2-t 12n70kl-tq2-r.pdf

2N70K 2N70K

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo

 0.3. Size:68K  ape
 apa2n70k.pdf

2N70K 2N70K

APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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