2N70K. Аналоги и основные параметры

Наименование производителя: 2N70K

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 38 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm

Тип корпуса: TO-252

Аналог (замена) для 2N70K

- подборⓘ MOSFET транзистора по параметрам

 

2N70K даташит

 ..1. Size:260K  utc
 2n70k.pdf pdf_icon

2N70K

UNISONIC TECHNOLOGIES CO., LTD 2N70K Power MOSFET 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70K is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power

 0.1. Size:718K  utc
 12n70kl-ta3-t 12n70kg-ta3-t 12n70kl-tf1-t 12n70kg-tf1-t 12n70kl-tf2-t 12n70kg-tf2-t 12n70kl-tf3t-t 12n70kg-tf3t-t 12n70kg-tq2-r.pdf pdf_icon

2N70K

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching perfo

 0.2. Size:718K  utc
 12n70kl-tf3-t 12n70kg-tf3-t 12n70kl-tm3-t 12n70kg-tm3-t 12n70kl-tn3-r 12n70kg-tn3-r 12n70kl-tq2-t 12n70kg-tq2-t 12n70kl-tq2-r.pdf pdf_icon

2N70K

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching perfo

 0.3. Size:68K  ape
 apa2n70k.pdf pdf_icon

2N70K

APA2N70K RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 10 S Simple Drive Requirement ID 0.35A D G SOT-223 D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,low on-resistance and cost

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Другие IGBT... 8N80, 9N80, 10N80, 12N80, 1N70Z, 2N70, 2N70Z, 2N70ZL, SPP20N60C3, 3N70, 3N70A, 3N70K, 4N70, 4N70K, 5N70K, 6N70, 7N70