2N70K Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2N70K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 38 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-252
Аналог (замена) для 2N70K
2N70K Datasheet (PDF)
2n70k.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N70K Power MOSFET 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70K is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power
12n70kl-ta3-t 12n70kg-ta3-t 12n70kl-tf1-t 12n70kg-tf1-t 12n70kl-tf2-t 12n70kg-tf2-t 12n70kl-tf3t-t 12n70kg-tf3t-t 12n70kg-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo
12n70kl-tf3-t 12n70kg-tf3-t 12n70kl-tm3-t 12n70kg-tm3-t 12n70kl-tn3-r 12n70kg-tn3-r 12n70kl-tq2-t 12n70kg-tq2-t 12n70kl-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTCs proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switchingperfo
apa2n70k.pdf

APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost
Другие MOSFET... 8N80 , 9N80 , 10N80 , 12N80 , 1N70Z , 2N70 , 2N70Z , 2N70ZL , AON7410 , 3N70 , 3N70A , 3N70K , 4N70 , 4N70K , 5N70K , 6N70 , 7N70 .
History: FHP7N65A | WML80R480S | IRF610P | SST308 | MMBFJ177 | SST176 | WMO18N20T2
History: FHP7N65A | WML80R480S | IRF610P | SST308 | MMBFJ177 | SST176 | WMO18N20T2



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