All MOSFET. 7N70 Datasheet

 

7N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 142 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 79 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-263_TO-220_TO-220F

7N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

7N70 Datasheet (PDF)

1.1. ss07n70.pdf Size:945K _upd

7N70
7N70

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 700V 700V CoolMOS C6 Power Transistor SS07N70 Data Sheet ev. 0 in l Industrial & Multimarket 700V CoolMOS C6 Power Transistor SS07N70 IPAK SL 1 Descriptiסn t b CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneered by Infineon

1.2. hcd7n70s.pdf Size:191K _update_mosfet

7N70
7N70

Apr 2014 BVDSS = 700 V RDS(on) typ = 0.95 HCD7N70S ID = 6.0 A 700V N-Channel Super Junction MOSFET D-PAK FEATURES 2 Originative New Design 1 Superior Avalanche Rugged Technology 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operatin

 1.3. cs7n70ard.pdf Size:347K _update_mosfet

7N70
7N70

Silicon N-Channel Power MOSFET R ○ CS7N70 ARD General Description: VDSS 700 V CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.4. 7n70.pdf Size:393K _utc

7N70
7N70

UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F ? DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 time, low gate charge, low on-state resistance and have a high 1 rugged avalanche characteristics. This power MOSFET is usually TO-220F1 TO-220F2

 1.5. aotf7n70.pdf Size:540K _aosemi

7N70
7N70

AOT7N70/AOTF7N70 700V, 7A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.8Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

1.6. aot7n70.pdf Size:540K _aosemi

7N70
7N70

AOT7N70/AOTF7N70 700V, 7A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT7N70 & AOTF7N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.8Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

1.7. ap07n70ci-h.pdf Size:98K _a-power

7N70
7N70

AP07N70CI-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Rated BVDSS 700V D Ў Fast Switching RDS(ON) 1.4? Ў Simple Drive Requirement ID 7A G S Description AP07N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-220CFM type provide high bl

1.8. sif7n70c.pdf Size:361K _sisemi

7N70
7N70

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF7N70C N- MOS / N-CHANNEL POWER MOSFET SIF7N70C N

1.9. cs7n70 ard.pdf Size:347K _crhj

7N70
7N70

Silicon N-Channel Power MOSFET R ○ CS7N70 ARD General Description: VDSS 700 V CS7N70 ARD, the silicon N-channel Enhanced VDMOSFETs, is ID 7 A PD(TC=25℃) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: 2N70K , 3N70 , 3N70A , 3N70K , 4N70 , 4N70K , 5N70K , 6N70 , 2N7002 , 8N70 , 9N70 , 10N70 , 12N70 , 15N70 , 6N65Z , 7N65A , 7N65 .

 
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