10N65K MOSFET. Datasheet pdf. Equivalent

10N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

10N65K Datasheet (PDF)

1.1. 10n65k.pdf Size:227K _utc

UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits

5.1. fcb110n65f.pdf Size:695K _upd-mosfet

April 2015 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98 nC

5.2. fch110n65f.pdf Size:1362K _fairchild_semi

December 2014 FCH110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg

 5.3. fcp110n65f.pdf Size:703K _fairchild_semi

August 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98

5.4. 10n65.pdf Size:381K _utc

UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicat

 5.5. 10n65z.pdf Size:202K _utc

UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

5.6. cep10n65 ceb10n65 cef10n65.pdf Size:385K _cet

CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85? 10A 10V CEB10N65 650V 0.85? 10A 10V CEF10N65 650V 0.85? 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

5.7. ixxh110n65c4.pdf Size:167K _igbt_a

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A ≤ ≤ VCE(sat) ≤ 2.35V ≤ ≤ Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V VGES Continuous ±20 V VGEM Transient ±30 V G C

5.8. ixxn110n65c4h1.pdf Size:218K _igbt_a

VCES = 650V XPTTM 650V GenX4TM IXXN110N65C4H1 IC110 = 110A w/ Sonic Diode   VCE(sat)    2.35V     tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E  Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M

5.9. ixyp10n65c3.pdf Size:214K _igbt_a

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3 GenX3TM IC110 = 10A   VCE(sat)    2.50V     tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 650 V G C Ta

5.10. ixxk110n65b4h1.pdf Size:259K _igbt_a

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.11. ixyp10n65c3d1.pdf Size:217K _igbt_a

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1 GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.50V     tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V C Tab E VCGR TJ = 25°C to 175°C, RGE

5.12. ixxx110n65b4h1.pdf Size:259K _igbt_a

VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.13. ixyp10n65c3d1m.pdf Size:196K _igbt_a

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1M GenX3TM w/Diode IC110 = 7A   VCE(sat)    2.6V     (Electrically Isolated Tab) tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR

5.14. ixxr110n65b4h1.pdf Size:233K _igbt_a

VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode ≤ ≤ VCE(sat) ≤ 2.20V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V G C VGES Continuous ±20 V Isolated Ta

5.15. ixxn110n65b4h1.pdf Size:224K _igbt_a

VCES = 650V XPTTM 650V GenX4TM IXXN110N65B4H1 IC110 = 110A w/ Sonic Diode   VCE(sat)    2.1V     tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E  VCES TJ = 25°C to 175°C 650 V G VCGR TJ = 25°C to 175°C, RGE = 1M 6

5.16. h10n65.pdf Size:170K _hsmc

Spec. No. : MOS200906 HI-SINCERITY Issued Date : 2009.03.23 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source 3 2 • Switch Mode Power Supply 1 3-Lead TO-220FP) • Uninterruptable Powe

5.17. aotf10n65.pdf Size:203K _aosemi

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.18. aot10n65.pdf Size:203K _aosemi

AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.19. aowf10n65.pdf Size:341K _aosemi

AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guar

5.20. aow10n65.pdf Size:341K _aosemi

AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guar

5.21. sif10n65c.pdf Size:291K _sisemi

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C

5.22. mtn10n65fp.pdf Size:355K _cystek

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp. Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.82Ω MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

5.23. mtn10n65ea.pdf Size:665K _cystek

Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp. Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 700V @Tj=150℃ RDS(ON) : 0.85Ω MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

5.24. mtn10n65fpg.pdf Size:317K _cystek

Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp. Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.82Ω MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

5.25. 10n65a 10n65af.pdf Size:1852K _goford

10N65A/10N65AF GOFORD Description Features • VDSS RDS(ON) ID @ 10V (typ) 10A 650V 0.72Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter TO-220

5.26. ssf10n65.pdf Size:532K _silikron

 SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9Ω (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

5.27. brf10n65.pdf Size:991K _blue-rocket-elect

BRF10N65(BRCS10N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited f

5.28. cs10n65 a8hd.pdf Size:356K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description： ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.29. cs10n65f a9r.pdf Size:273K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N65F A9R General Description： VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.30. cs10n65f a9hd.pdf Size:351K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD VDSS 650 V General Description： ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.31. cs10n65 a8r.pdf Size:267K _crhj

Silicon N-Channel Power MOSFET R ○ CS10N65 A8R General Description： VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.32. cm10n65f.pdf Size:125K _jdsemi

R CM10N65F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点 开关速度快 1 2 通态电阻小，输入电容�

5.33. cm10n65afz.pdf Size:125K _jdsemi

R CM10N65AFZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点 开关速度快 1 通态电阻小，输入电容�

5.34. cm10n65az.pdf Size:122K _jdsemi

R CM10N65AZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2．主要特点 开关速度快 通态电阻小，输入电容小

5.35. ftk10n65p f dd.pdf Size:283K _first_silicon

SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

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