All MOSFET. 10N65K Datasheet

 

10N65K MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N65K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 69 nS

Drain-Source Capacitance (Cd): 166 pF

Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm

Package: TO-262_TO-220F_TO-220F1

10N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

10N65K Datasheet (PDF)

1.1. 10n65k.pdf Size:227K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits

5.1. tmp10n65 tmpf10n65.pdf Size:577K _update

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TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A  Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

5.2. tmp10n65a tmpf10n65a.pdf Size:607K _update

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TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 650V 9.5A <0.82W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP10N65A / TMPF10N65A TO-220 / TO-220F TMP10N65A / TMPF10N65A RoHS TMP10N65AG / TMPF10N65AG TO-22

 5.3. msf10n65.pdf Size:1078K _upd-mosfet

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

5.4. fcb110n65f.pdf Size:695K _upd-mosfet

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April 2015 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98 nC

 5.5. hy10n65t.pdf Size:129K _upd-mosfet

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HY10N65T / HY10N65FT 650V / 10A 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

5.6. fch110n65f.pdf Size:1362K _fairchild_semi

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December 2014 FCH110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg

5.7. fcp110n65f.pdf Size:703K _fairchild_semi

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August 2014 FCP110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 96 mΩ (Typ.) charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 98

5.8. 10n65.pdf Size:381K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicat

5.9. 10n65z.pdf Size:202K _utc

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UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applic

5.10. cep10n65 ceb10n65 cef10n65.pdf Size:385K _cet

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CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85? 10A 10V CEB10N65 650V 0.85? 10A 10V CEF10N65 650V 0.85? 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES

5.11. ixxh110n65c4.pdf Size:167K _igbt_a

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Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A ≤ ≤ VCE(sat) ≤ 2.35V ≤ ≤ Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V VGES Continuous ±20 V VGEM Transient ±30 V G C

5.12. ixxn110n65c4h1.pdf Size:218K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXN110N65C4H1 IC110 = 110A w/ Sonic Diode   VCE(sat)    2.35V     tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 E  Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M

5.13. ixyp10n65c3.pdf Size:214K _igbt_a

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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3 GenX3TM IC110 = 10A   VCE(sat)    2.50V     tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 650 V G C Ta

5.14. ixxk110n65b4h1.pdf Size:259K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.15. ixyp10n65c3d1.pdf Size:217K _igbt_a

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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1 GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.50V     tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 175°C 650 V C Tab E VCGR TJ = 25°C to 175°C, RGE

5.16. ixxx110n65b4h1.pdf Size:259K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXK110N65B4H1 IC110 = 110A w/ Sonic Diode IXXX110N65B4H1 ≤ ≤ VCE(sat) ≤ 2.1V ≤ ≤ tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25°C to 175°C 650 V E VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V Tab VGES Continuous ±20 V PLUS247 (IXXX)

5.17. ixyp10n65c3d1m.pdf Size:196K _igbt_a

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Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP10N65C3D1M GenX3TM w/Diode IC110 = 7A   VCE(sat)    2.6V     (Electrically Isolated Tab) tfi(typ) = 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR

5.18. ixxr110n65b4h1.pdf Size:233K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode ≤ ≤ VCE(sat) ≤ 2.20V ≤ ≤ (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 650 V G C VGES Continuous ±20 V Isolated Ta

5.19. ixxn110n65b4h1.pdf Size:224K _igbt_a

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VCES = 650V XPTTM 650V GenX4TM IXXN110N65B4H1 IC110 = 110A w/ Sonic Diode   VCE(sat)    2.1V     tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E  VCES TJ = 25°C to 175°C 650 V G VCGR TJ = 25°C to 175°C, RGE = 1M 6

5.20. h10n65.pdf Size:170K _hsmc

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Spec. No. : MOS200906 HI-SINCERITY Issued Date : 2009.03.23 Revised Date :2009.08.05 MICROELECTRONICS CORP. Page No. : 1/6 H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (650V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source 3 2 • Switch Mode Power Supply 1 3-Lead TO-220FP) • Uninterruptable Powe

5.21. aotf10n65.pdf Size:203K _aosemi

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.22. aot10n65.pdf Size:203K _aosemi

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AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.23. aowf10n65.pdf Size:341K _aosemi

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AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guar

5.24. aow10n65.pdf Size:341K _aosemi

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AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 1Ω popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guar

5.25. sif10n65c.pdf Size:291K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N65C N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N65C

5.26. mtn10n65fp.pdf Size:355K _cystek

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Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp. Revised Date : 2012.01.13 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.82Ω MTN10N65FP ID : 10A Description The MTN10N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resi

5.27. mtn10n65ea.pdf Size:665K _cystek

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Spec. No. : C725EA Issued Date : 2010.02.25 CYStech Electronics Corp. Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 700V @Tj=150℃ RDS(ON) : 0.85Ω MTN10N65EA ID : 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, l

5.28. mtn10n65fpg.pdf Size:317K _cystek

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Spec. No. : C725FP Issued Date : 2009.06.15 CYStech Electronics Corp. Revised Date : 2011.08.15 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 0.82Ω MTN10N65FPG ID : 10A Description The MTN10N65FPG is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

5.29. 10n65a 10n65af.pdf Size:1852K _goford

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10N65A/10N65AF GOFORD Description Features • VDSS RDS(ON) ID @ 10V (typ) 10A 650V 0.72Ω • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • Active power factor correction • Uninterruptible Power Supply (UPS) • Electronic lamp ballasts Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter TO-220

5.30. ssf10n65.pdf Size:532K _silikron

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 SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9Ω (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

5.31. brf10n65.pdf Size:991K _blue-rocket-elect

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BRF10N65(BRCS10N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited f

5.32. cs10n65 a8hd.pdf Size:356K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65 A8HD VDSS 650 V General Description: ID 10 A CS10N65 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.33. cs10n65f a9r.pdf Size:273K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65F A9R General Description: VDSS 650 V CS10N65F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.34. cs10n65f a9hd.pdf Size:351K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65F A9HD VDSS 650 V General Description: ID 10 A CS10N65F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.65 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

5.35. cs10n65 a8r.pdf Size:267K _crhj

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Silicon N-Channel Power MOSFET R ○ CS10N65 A8R General Description: VDSS 650 V CS10N65 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.86 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.36. cm10n65f.pdf Size:125K _jdsemi

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R CM10N65F 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 2 通态电阻小,输入电容

5.37. cm10n65afz.pdf Size:125K _jdsemi

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R CM10N65AFZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容

5.38. cm10n65az.pdf Size:122K _jdsemi

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R CM10N65AZ 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆650V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小

5.39. ftk10n65p f dd.pdf Size:283K _first_silicon

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SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

5.40. mdf10n65bth.pdf Size:881K _magnachip

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 MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω General Description Features The MDF10N65B MOSFET are produced using advanced  V = 650V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 1.0Ω @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for

5.41. msf10n65.pdf Size:1078K _bruckewell

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requir

Datasheet: 7N65A , 7N65 , 7N65Z , 7N65K , 8N65 , 9N65 , 10N65 , 10N65Z , IRFP250N , 15N65 , 18N65 , 20N65 , 22N65 , 1N65A , 1N65 , 2N65 , 2N65L .

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