22N65 Datasheet. Specs and Replacement

Type Designator: 22N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 450 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-3P TO-247

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22N65 datasheet

 ..1. Size:252K  utc
22n65.pdf pdf_icon

22N65

UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ... See More ⇒

 0.1. Size:1156K  st
stl22n65m5.pdf pdf_icon

22N65

STL22N65M5 N-channel 650 V, 0.180 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL22N65M5 710 V 0.210 15 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. 100% avalanche tested PowerFLAT 8x8 HV Low... See More ⇒

 0.2. Size:185K  vishay
sihg22n65e.pdf pdf_icon

22N65

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availab... See More ⇒

 0.3. Size:209K  vishay
sihb22n65e.pdf pdf_icon

22N65

SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 32 ... See More ⇒

Detailed specifications: 8N65, 9N65, 10N65, 10N65Z, 10N65K, 15N65, 18N65, 20N65, AO3407, 1N65A, 1N65, 2N65, 2N65L, 2N65Z, 2N65K, 3N65A, 3N65

Keywords - 22N65 MOSFET specs

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