All MOSFET. 22N65 Datasheet

 

22N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 22N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 450 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO-3P, TO-247

22N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

22N65 Datasheet (PDF)

1.1. stl22n65m5.pdf Size:1156K _update

22N65
22N65

STL22N65M5 N-channel 650 V, 0.180 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL22N65M5 710 V 0.210 Ω 15 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. ■ 100% avalanche tested PowerFLAT™ 8x8 HV ■ Low

1.2. sihg22n65e.pdf Size:185K _upd-mosfet

22N65
22N65

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availab

 1.3. sihp22n65e.pdf Size:167K _upd-mosfet

22N65
22N65

SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availab

1.4. sihf22n65e.pdf Size:163K _upd-mosfet

22N65
22N65

SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Available Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Availa

 1.5. sihb22n65e.pdf Size:209K _upd-mosfet

22N65
22N65

SiHB22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 • Reduced switching and conduction losses Qg max. (nC) 110 • Ultra low gate charge (Qg) Qgs (nC) 15 • Avalanche energy rated (UIS) Qgd (nC) 32 •

1.6. ixfp22n65x2m.pdf Size:136K _update-mosfet

22N65
22N65

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP22N65X2M Power MOSFET ID25 = 22A   RDS(on)    145m     (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V G Isolated Tab D VDGR TJ = 25C to 150C, RGS = 1M 650 V S VGSS Conti

1.7. sihf22n65e.pdf Size:225K _update-mosfet

22N65
22N65

isc N-Channel MOSFET Transistor SiHF22N65E ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

1.8. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

22N65
22N65

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

1.9. 22n65.pdf Size:252K _utc

22N65
22N65

UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) < 0.35? * Ultra low gate charge ( Ty

1.10. ixfa22n65x2.pdf Size:205K _inchange_semiconductor

22N65
22N65

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : I = 22A@ T =25℃ D C ·Drain Source Voltage : V = 650V(Min) DSS ·100% Avalanche Rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Moto

1.11. ixfp22n65x2m.pdf Size:203K _inchange_semiconductor

22N65
22N65

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2M ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G

1.12. ixfp22n65x2.pdf Size:205K _inchange_semiconductor

22N65
22N65

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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