Справочник MOSFET. 22N65

 

22N65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 22N65

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 450 W

Предельно допустимое напряжение сток-исток |Uds|: 650 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 22 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 250 ns

Выходная емкость (Cd): 350 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm

Тип корпуса: TO-3P TO-247

Аналог (замена) для 22N65

 

 

22N65 Datasheet (PDF)

0.1. stl22n65m5.pdf Size:1156K _st

22N65
22N65

STL22N65M5N-channel 650 V, 0.180 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet production dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL22N65M5 710 V 0.210 15 A(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV Low

0.2. sihg22n65e.pdf Size:185K _vishay

22N65
22N65

SiHG22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab

 0.3. sihp22n65e.pdf Size:167K _vishay

22N65
22N65

SiHP22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab

0.4. sihf22n65e.pdf Size:163K _vishay

22N65
22N65

SiHF22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesAvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Availa

 0.5. sihb22n65e.pdf Size:209K _vishay

22N65
22N65

SiHB22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Qgd (nC) 32

0.6. ixfp22n65x2m.pdf Size:136K _ixys

22N65
22N65

Preliminary Technical InformationX2-Class HiperFETTM VDSS = 650VIXFP22N65X2MPower MOSFET ID25 = 22A RDS(on) 145m (Electrically Isolated Tab)OVERMOLDEDN-Channel Enhancement ModeTO-220Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGIsolated TabDVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Conti

0.7. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

22N65
22N65

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFA22N65X2Power MOSFET ID25 = 22AIXFP22N65X2 RDS(on) 160m IXFH22N65X2N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to

0.8. 22n65.pdf Size:252K _utc

22N65
22N65

UNISONIC TECHNOLOGIES CO., LTD 22N65 Power MOSFET 22A, 650V N-CHANNEL POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N65 uses UTCs advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

0.9. ixfa22n65x2.pdf Size:205K _inchange_semiconductor

22N65
22N65

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFA22N65X2 IIXFA22N65X2DESCRIPTIONDrain Current : I = 22A@ T =25D CDrain Source Voltage : V = 650V(Min)DSS100% Avalanche RatedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Switch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Moto

0.10. ixfp22n65x2m.pdf Size:203K _inchange_semiconductor

22N65
22N65

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFP22N65X2MFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV G

0.11. ixfp22n65x2.pdf Size:205K _inchange_semiconductor

22N65
22N65

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFP22N65X2FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Ga

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