All MOSFET. 2N65K Datasheet


2N65K MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N65K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 3.9 Ohm

Package: TO-252

2N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N65K Datasheet (PDF)

1.1. 2n65k.pdf Size:229K _utc


UNISONIC TECHNOLOGIES CO., LTD 2N65K Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N65K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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