All MOSFET. 5N65 Datasheet

 

5N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 5N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 42 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO-220, TO-251, TO-252, TO-220F, TO-220F1

5N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

5N65 Datasheet (PDF)

0.1. swd5n65k.pdf Size:836K _1

5N65
5N65

SW5N65K N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 650V ID : 5A  High ruggedness  Low RDS(ON) (Typ 0.8Ω)@VGS=10V RDS(ON) : 0.8Ω  Low Gate Charge (Typ 10.3nC)  Improved dv/dt Capability 2  100% Avalanche Tested 1 2  Application: LED, Charge, Adaptor 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOSFE

0.2. fcpf165n65s3l1.pdf Size:289K _1

5N65
5N65

FCPF165N65S3L1 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 165 mW @ 10 V 19 A charge performance. This adv

 0.3. sty145n65m5.pdf Size:782K _st

5N65
5N65

STY145N65M5 N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh™ V Power MOSFET in Max247 package Datasheet — preliminary data Features VDSS Order code @TJmax RDS(on) max ID STY145N65M5 710 V < 0.015 Ω 138 A ■ Max247 worldwide best RDS(on) ■ Higher VDSS rating 3 2 ■ Higher dv/dt capability 1 ■ Excellent switching performance Max247 ■ Easy to drive ■ 100% avalanche

0.4. stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf Size:1336K _st

5N65
5N65

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5 N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features TAB 2 VDSS @ RDS(on) 3 Order code ID 1 TJmax max 3 2 D2PAK 1 STB45N65M5 TO-220FP TAB STF45N65M5 710 V < 0.078 Ω 35 A STP45N65M5 STW45N65M5 3 2 3 ■ Worldwide best RDS(on) *

 0.5. std15n65m5.pdf Size:1087K _st

5N65
5N65

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V < 0.34 Ω 11 A STD15N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

0.6. stl15n65m5.pdf Size:1411K _st

5N65
5N65

STL15N65M5 N-channel 650 V, 0.335 Ω typ., 10 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDSS RDS(on) max ID STL15N65M5 710 V < 0.375 Ω 10 A(1) 1. The value is rated according to Rthj-case and limited by package 1 2 • Outstanding RDS(on)*area 3 4 • Extremely large avalanche performance TM PowerFLAT 5x6 HV

0.7. stb15n65.pdf Size:87K _st

5N65
5N65

STB15N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB15N25 250 V < 0.25 Ω 15 A TYPICAL R = 0.2 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE 3 3 2 LOW LEAKAGE CURRENT 1 1 APPLICATION ORIENTED CHARACTERIZATION I2PAK D2PAK THROUG

0.8. stf15n65m5 stfi15n65m5 stp15n65m5.pdf Size:919K _st

5N65
5N65

STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet — production data Features VDS @ RDS(on) Order codes ID TJmax max 3 2 1 STF15N65M5 TO-220FP STFI15N65M5 710 V < 0.34 Ω 11 A TAB STP15N65M5 ■ Worldwide best RDS(on) * area 3 1 ■ Higher VDSS rating and high dv/dt capabil

0.9. stl45n65m5.pdf Size:1044K _st

5N65
5N65

STL45N65M5 N-channel 650 V, 0.075 Ω typ., 22.5 A MDmesh™ V Power MOSFET in PowerFLAT™ 8x8 HV package Datasheet — preliminary data Features VDSS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL45N65M5 710 V < 0.086 Ω 22.5 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. ■ 100% avalanche tested PowerFLAT™ 8x8 HV

0.10. stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf Size:1202K _st

5N65
5N65

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V < 0.098 Ω 27 A 1 D²PAK I²PAK STF35N65M5 710 V < 0.098 Ω 27 A(1) TO-220FP STI35N65M5 710 V < 0.098 Ω 27 A STP35N65M5 710 V < 0.098 Ω 27

0.11. ste145n65m5.pdf Size:944K _st

5N65
5N65

STE145N65M5 N-channel 650 V, 0.012 Ω typ., 143 A, MDmesh™ V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE145N65M5 710 V 0.015 Ω 143 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability ISOTOP • Excellent switching performance • 100% avalanche tested Applications Figure 1. Internal sch

0.12. stfw45n65m5 stwa45n65m5.pdf Size:1268K _st

5N65
5N65

STFW45N65M5, STW45N65M5, STWA45N65M5 N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 STW45N65M5 710 V 0.078 Ω 35 A 1 1 1 STWA45N65M5 3 3 2 2 1 1 • Worldwide best RDS(on) * area TO-247 TO-3PF TO-247 long leads • Hig

0.13. tk35n65w5.pdf Size:249K _toshiba

5N65
5N65

TK35N65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK35N65W5 TK35N65W5 TK35N65W5 TK35N65W5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 130 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by used to Super Junction Str

0.14. tk35n65w.pdf Size:246K _toshiba

5N65
5N65

TK35N65W MOSFETs Silicon N-Channel MOS (DTMOS) TK35N65W TK35N65W TK35N65W TK35N65W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) E

0.15. fdp15n65 fdpf15n65.pdf Size:490K _fairchild_semi

5N65
5N65

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 48.5 nC) stripe, DMOS technology. • Low Crss ( typical 23.6 pF) This advanced technology has been especia

0.16. fda15n65.pdf Size:876K _fairchild_semi

5N65
5N65

January 2007 TM UniFET FDA15N65 650V N-Channel MOSFET Features Description • 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 48.5 nC) stripe, DMOS technology. • Low Crss ( typical 23.6 pF) This advanced technology has been especially tailor

0.17. fdp15n65 fdpf15n65ydtu.pdf Size:457K _fairchild_semi

5N65
5N65

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 48.5 nC) stripe, DMOS technology. • Low Crss ( typical 23.6 pF) This advanced technology has been especia

0.18. irfib5n65a.pdf Size:103K _international_rectifier

5N65
5N65

PD-91816B SMPS MOSFET IRFIB5N65A HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93Ω 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacita

0.19. irfib5n65apbf.pdf Size:235K _international_rectifier

5N65
5N65

PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 650V 0.93Ω 5.1A l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness G D S

0.20. sihb15n65e.pdf Size:206K _vishay

5N65
5N65

SiHB15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 21 •

0.21. irfib5n65a sihfib5n65a.pdf Size:141K _vishay

5N65
5N65

IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) (Ω)VGS = 10 V 0.93 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 •

0.22. sihf15n65e.pdf Size:160K _vishay

5N65
5N65

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Available Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (U

0.23. sihp15n65e.pdf Size:165K _vishay

5N65
5N65

SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Available Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (U

0.24. sihfib5n65a.pdf Size:143K _vishay

5N65
5N65

IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) (Ω)VGS = 10 V 0.93 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 •

0.25. spp15n65c3.pdf Size:253K _infineon

5N65
5N65

SPP15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS • Low gate charge R 0.28 Ω DS(on),max • Extreme dv/dt rated Q 63 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220-3-1 CoolMOS C3 designed for: • Notebook Adapter Type Package Marking SPP15N65C3

0.26. ikp15n65h5.pdf Size:2448K _infineon

5N65
5N65

IGBT High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft anti parallel diode IKP15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft anti parallel diode C

0.27. ikw75n65el5.pdf Size:2087K _infineon

5N65
5N65

IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKW75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKW75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode C Fe

0.28. ikz75n65el5.pdf Size:2020K _infineon

5N65
5N65

IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode IKZ75N65EL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKZ75N65EL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 CE(sat) fast and soft antiparallel diode Featu

0.29. ika15n65h5.pdf Size:2449K _infineon

5N65
5N65

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKA15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diod

0.30. ika15n65f5.pdf Size:2448K _infineon

5N65
5N65

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKA15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti par

0.31. spi15n65c3.pdf Size:558K _infineon

5N65
5N65

SPI15N65C3 CססIMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 650 V DS R 'AH 93E7 5:3C97 0.28 W DS(on) max R IEC7?7 6G 6E C3E76 6 nC g typ R #;9: B73= 5FCC7@E 53B34;>;EJ R , F3>;8;76 for industrial grade applications 355AC6;@9 EA % R +4 8C77 >736 B>3E;@9 - A#. 5A?B>;3@E; Halogen free mold compound TO‐262‐ ‐1 ;;8!#& 01>53:10 2;= R ) AE74AA= 63BE7C Type Package Mar

0.32. ikp15n65f5.pdf Size:2447K _infineon

5N65
5N65

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti par

0.33. spa15n65c3.pdf Size:277K _infineon

5N65
5N65

SPA15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS • Low gate charge R 0.28 Ω DS(on),max • Extreme dv/dt rated Q 63 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220-3-31 Type Package Marking SPA15N65C3 PG-TO220-3-31 15N65C3 Maximum ratings, at T =

0.34. ixyp15n65c3.pdf Size:190K _ixys

5N65
5N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3 GenX3TM IC110 = 15A   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 650 V G C Tab

0.35. ixyh75n65c3.pdf Size:233K _ixys

5N65
5N65

VCES = 650V XPTTM 650V IGBT IXYH75N65C3 IC110 = 75A GenX3TM   VCE(sat)    2.3V     tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 650 V VGES Continuous ±20 V G C Tab VGEM

0.36. ixyh75n65c3h1.pdf Size:239K _ixys

5N65
5N65

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3H1 IC110 = 75A GenX3TM w/ Sonic   VCE(sat)    2.3V     Diode tfi(typ) = 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE =

0.37. ixyn75n65c3d1.pdf Size:230K _ixys

5N65
5N65

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN75N65C3D1 IC110 = 75A GenX3TM w/ Diode   VCE(sat)    2.3V     tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E  VCES TJ = 25°C to 175°C 650 V G VCGR TJ = 25

0.38. ixya15n65c3d1.pdf Size:222K _ixys

5N65
5N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25°C to 175°C 650 V VCGR

0.39. ixyp15n65c3d1.pdf Size:222K _ixys

5N65
5N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25°C to 175°C 650 V VCGR

0.40. ixyp15n65c3d1m.pdf Size:195K _ixys

5N65
5N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3D1M GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.5V     (Electrically Isolated Tab) tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR

0.41. ixyh75n65c3d1.pdf Size:245K _ixys

5N65
5N65

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3D1 IC110 = 75A GenX3TM w/ Diode   VCE(sat)    2.3V     tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 6

0.42. fcpf125n65s3.pdf Size:311K _onsemi

5N65
5N65

CPF125N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc

0.43. ngtg35n65fl2.pdf Size:84K _onsemi

5N65
5N65

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Eff

0.44. ngtb35n65fl2.pdf Size:91K _onsemi

5N65
5N65

NGTB35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http://

0.45. ngtb75n65fl2.pdf Size:243K _onsemi

5N65
5N65

NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 75 A, 650 V

0.46. ngtg35n65fl2wg.pdf Size:84K _onsemi

5N65
5N65

NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Eff

0.47. fcp125n65s3.pdf Size:378K _onsemi

5N65
5N65

FCP125N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc

0.48. ngtb75n65fl2wg.pdf Size:243K _onsemi

5N65
5N65

NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 75 A, 650 V

0.49. ngtb35n65fl2wg.pdf Size:91K _onsemi

5N65
5N65

NGTB35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http://

0.50. 5n65k.pdf Size:223K _utc

5N65
5N65

UNISONIC TECHNOLOGIES CO., LTD 5N65K Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65K is a high voltage power MOSFET designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche TO-220F characteristics. This power MOSFET is usually used in high speed switching applications a

0.51. 5n65.pdf Size:257K _utc

5N65
5N65

UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supp

0.52. 15n65.pdf Size:230K _utc

5N65
5N65

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

0.53. cjpf05n65.pdf Size:110K _jiangsu

5N65
5N65

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF05N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

0.54. kf5n65i.pdf Size:480K _kec

5N65
5N65

KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el

0.55. kf5n65p-f.pdf Size:414K _kec

5N65
5N65

KF5N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for E _ G A 9.9 + 0.2 electronic ballast

0.56. kf5n65d-i.pdf Size:482K _kec

5N65
5N65

KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el

0.57. ceu05n65 ced05n65.pdf Size:415K _cet

5N65
5N65

CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

0.58. cep05n65 ceb05n65 cef05n65.pdf Size:427K _cet

5N65
5N65

CEP05N65/CEB05N65 CEF05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP05N65 650V 2.4Ω 4.5A 10V CEB05N65 650V 2.4Ω 4.5A 10V CEF05N65 650V 2.4Ω 4.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO

0.59. sif5n65c.pdf Size:474K _sisemi

5N65
5N65

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANN

0.60. mtn5n65fp.pdf Size:274K _cystek

5N65
5N65

Spec. No. : C716FP Issued Date : 2010.03.12 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 2Ω (typ.) MTN5N65FP ID : 5A Description The MTN5N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

0.61. brf15n65.pdf Size:1106K _blue-rocket-elect

5N65
5N65

BRF15N65(BRCS15N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅极电荷,低 Crss,快速开关,100%的雪崩测试,改进 dv/dt 能力。 Low gate charge, Low Crss ,Fast switching,100% avalanche tested, Improved dv/dt capability. 用途 / Appl

0.62. 5n65a 5n65af 5n65f 5n65g.pdf Size:373K _nell

5N65
5N65

RoHS 5N65 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 650Volts) DESCRIPTION D The Nell 5N65 is a three-terminal silicon D device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

0.63. cs5n65 a7h.pdf Size:417K _crhj

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A7H General Description: VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.64. cs5n65 a3.pdf Size:837K _crhj

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A3 General Description: VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25℃) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

0.65. cs5n65 a4.pdf Size:837K _crhj

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A4 General Description: VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25℃) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

0.66. cs5n65 a8h.pdf Size:424K _crhj

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A8H General Description: VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

0.67. cs5n65f a9h.pdf Size:829K _crhj

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65F A9H General Description: VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25℃) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.68. wfd5n65l.pdf Size:255K _winsemi

5N65
5N65

WFD5N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 5.0A,650V,R (Max2.7Ω)@V =10V � DS(on) GS � Ultra-low Gate charge(Typical 12nC) � Fast Switching Capability G � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) S General Description This Power MOSFET is produced

0.69. wff5n65b.pdf Size:572K _winsemi

5N65
5N65

WFF5N65B WFF5N65B WFF5N65B WFF5N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,650V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

0.70. wfj5n65b.pdf Size:660K _winsemi

5N65
5N65

WFJ5N65B WFJ5N65B WFJ5N65B WFJ5N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,650V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical13.3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

0.71. chm05n65pagp.pdf Size:336K _chenmko

5N65
5N65

CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. D-PAK(TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power and current handing capabilit

0.72. hfw5n65u.pdf Size:683K _semihow

5N65
5N65

Jan 2013 BVDSS = 650 V RDS(on) typ HFW5N65U / HFI5N65U ID = 4.5 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design Superior Avalanche Rugged Technology HFW5N65U HFI5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Exte

0.73. hfd5n65s.pdf Size:204K _semihow

5N65
5N65

Mar 2010 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65S / HFU5N65S ID = 4.0 A 650V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N65S HFU5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

0.74. hfs5n65u.pdf Size:315K _semihow

5N65
5N65

March 2013 BVDSS = 650 V RDS(on) typ HFS5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

0.75. hfp5n65s.pdf Size:207K _semihow

5N65
5N65

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFP5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

0.76. hfw5n65s.pdf Size:174K _semihow

5N65
5N65

Mar 2010 BVDSS = 650 V RDS(on) typ HFW5N65S / HFI5N65S ID = 4.2 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N65S HFI5N65S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

0.77. hfs5n65s.pdf Size:202K _semihow

5N65
5N65

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

0.78. hfp5n65u.pdf Size:204K _semihow

5N65
5N65

March 2013 BVDSS = 650 V RDS(on) typ HFP5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

0.79. hfd5n65u.pdf Size:209K _semihow

5N65
5N65

Jan 2014 BVDSS = 650 V RDS(on) typ = 2.3 HFD5N65U / HFU5N65U ID = 3.6 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N65U HFU5N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

0.80. cs5n65a4.pdf Size:837K _wuxi_china

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A4 General Description: VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25℃) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

0.81. cs5n65a8h.pdf Size:424K _wuxi_china

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A8H General Description: VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

0.82. cs5n65a7h.pdf Size:417K _wuxi_china

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A7H General Description: VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25℃) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

0.83. cs5n65fa9h.pdf Size:829K _wuxi_china

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65F A9H General Description: VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25℃) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

0.84. cs5n65a3.pdf Size:837K _wuxi_china

5N65
5N65

Silicon N-Channel Power MOSFET R ○ CS5N65 A3 General Description: VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25℃) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top