All MOSFET. 6N65 Datasheet

 

6N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 6N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO-220_TO-251_TO-252_TO-220F_TO-220F1

6N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

6N65 Datasheet (PDF)

1.1. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf Size:994K _st

6N65
6N65

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 ?, 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.299 ? 12 A STU16N65M5 STW16N65M5 3 DPAK worldwide best RDS(on) 2 3 1 2 1 Higher VDSS ratin

1.2. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf Size:1053K _st

6N65
6N65

STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 ?, 12 A MDmesh V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.279 ? 12 A STU16N65M5 STW16N65M5 3 DPAK worldwide best RDS(on) 2 3 1 2 1 Higher VDSS ratin

 1.3. stb16n65m5 std16n65m5.pdf Size:1032K _st

6N65
6N65

STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 ?, 12 A MDmesh V Power MOSFET in D?PAK, DPAK Features VDSS @ RDS(on) Type ID TJmax max. STB16N65M5 710 V < 0.299 ? 12 A STD16N65M5 3 3 1 1 DPAK worldwide best RDS(on) DPAK D?PAK Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Figure 1. Internal schematic di

1.4. ixfh46n65x2.pdf Size:113K _ixys

6N65
6N65

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH46N65X2 Power MOSFET ID25 = 46A   RDS(on)    76m     N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25C to 150C 650 V G = Gate D = Drain VDGR TJ = 25C to 150C, RGS = 1M 650 V S =

 1.5. 6n65z.pdf Size:245K _utc

6N65
6N65

UNISONIC TECHNOLOGIES CO., LTD 6N65Z Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching p

1.6. 6n65.pdf Size:255K _utc

6N65
6N65

UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching pow

1.7. mtn6n65fp.pdf Size:276K _cystek

6N65
6N65

Spec. No. : C597FP Issued Date : 2010.01.28 CYStech Electronics Corp. Revised Date :2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 1.23Ω (typ.) MTN6N65FP ID : 6A Description The MTN6N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

1.8. ftp06n65 fta06n65.pdf Size:295K _inpower_semi

6N65
6N65

FTP06N65 FTA06N65 N-Channel MOSFET Applications: VDSS RDS(ON) (Max.) ID • Adaptor 650V 1.25 Ω 6.0A • LCD Panel Power Features: • Lead Free • Low ON Resistance D • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves G G D G Ordering Information S D S PART NUMBER PACKAGE BRAND TO-220 TO-220F S FTP06N65 TO-220 FTP06N65 Not to Sc

1.9. ndt6n65p.pdf Size:3425K _kexin

6N65
6N65

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N65P TO-251 ■ Features ● VDS (V) = 650V 1 2 3 ● ID = 4.8A (VGS = 10V) ● RDS(ON) < 1.8Ω (VGS = 10V) D ● Low gate charge ( typical 16nC) 1 3 2 G S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 Tc=25℃ 4.8 Continuou

Datasheet: 3N65 , 3N65Z , 3N65K , 4N65 , 4N65Z , 4N65K , 5N65 , 5N65K , 2SK163 , 5N60 , 6N60 , 6N60Z , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 .

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