All MOSFET. 6N65 Datasheet

 

6N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 6N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 100 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO-220, TO-251, TO-252, TO-220F, TO-220F1

6N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

6N65 Datasheet (PDF)

0.1. stb16n65m5 std16n65m5.pdf Size:1032K _st

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STB16N65M5 STD16N65M5 N-channel 650 V, 0.270 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK Features VDSS @ RDS(on) Type ID TJmax max. STB16N65M5 710 V < 0.299 Ω 12 A STD16N65M5 3 3 1 1 ■ DPAK worldwide best RDS(on) DPAK D²PAK ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Figure 1.

0.2. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5 2.pdf Size:994K _st

6N65
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STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.270 Ω, 12 A MDmesh™ V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.299 Ω 12 A STU16N65M5 STW16N65M5 3 ■ DPAK worldwide best RDS(on) 2 3 1 2 1 ■ Higher

 0.3. std16n65m2.pdf Size:938K _st

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STD16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID TAB STD16N65M2 710 V 0.36 Ω 11 A • Extremely low gate charge 3 2 • Excellent output capacitance (Coss) profile 1 • 100% avalanche tested • Zener-protected DPAK Applications • Switching applications Fig

0.4. stp16n65m2 stu16n65m2.pdf Size:818K _st

6N65
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STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB Order code VDS @ TJmax RDS(on) max ID TAB STP16N65M2 710 V 0.36 Ω 11 A STU16N65M2 710 V 0.36 Ω 11 A 3 • Extremely low gate charge 2 3 • Excellent output capacitance (Coss) profile 1 2 1 • 100% avalanche tested

 0.5. stp16n65m5 stu16n65m5 stw16n65m5 sti16n65m5 stf16n65m5.pdf Size:1053K _st

6N65
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STF16N65M5, STI16N65M5 STP16N65M5,STU16N65M5,STW16N65M5 N-channel 650 V, 0.240 Ω, 12 A MDmesh™ V Power MOSFET in TO-220FP, TO-220, IPAK, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 2 2 1 STF16N65M5 1 1 TO-220 STI16N65M5 TO-247 TO-220FP STP16N65M5 710 V < 0.279 Ω 12 A STU16N65M5 STW16N65M5 3 ■ DPAK worldwide best RDS(on) 2 3 1 2 1 ■ Higher

0.6. stfi6n65k3 stu6n65k3.pdf Size:901K _st

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6N65

STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK Datasheet — production data Features Order codes VDSS RDS(on) max. ID Ptot STF6N65K3 TAB 30 W STFI6N65K3 650 V < 1.3 Ω 5.4 A STU6N65K3 110 W 3 3 2 2 1 2 1 1 3 ■ 100% avalanche tested TO-220FP I²PAKFP IPAK ■ Extremely high dv/dt capability ■

0.7. stf6n65m2 stp6n65m2 stu6n65m2.pdf Size:732K _st

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STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes VDS RDS(on) max ID STF6N65M2 3 3 STP6N65M2 650 V 1.35 Ω 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB • Extremely low gate charge • Excellent output capacitance (COSS) profile 3 2 • 1

0.8. stl16n65m2.pdf Size:942K _st

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6N65

STL16N65M2 N-channel 650 V, 0.325 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 Ω 7.5 A • Extremely low gate charge 1 • Excellent output capacitance (Coss) profile 2 3 4 • 100% avalanche tested • Zener-protected PowerFLAT™ 5x6 HV Applications

0.9. stw56n65m2.pdf Size:724K _st

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STW56N65M2 N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID STW56N65M2 650 V 0.062 Ω 49 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested 3 2 • Zener-protected 1 Applications TO-247 • Switching applications Figure

0.10. stf16n65m2.pdf Size:780K _st

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STF16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF16N65M2 710 V 0.36 Ω 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications TO-220FP • Switching applications Figure 1.

0.11. stw56n65m2-4.pdf Size:699K _st

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STW56N65M2-4 N-channel 650 V, 0.049 Ω typ., 49 A MDmesh™ M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS RDS(on) max ID STW56N65M2-4 650 V 0.062 Ω 49 A • Excellent switching performance thanks to the extra driving source pin • Extremely low gate charge 4 • Excellent output capacitance (Coss) profile 3 2 • 100% avalanche tes

0.12. stb6n65m2 std6n65m2.pdf Size:881K _st

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STB6N65M2, STD6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - preliminary data Features Order codes VDS RDS(on) max ID STB6N65M2 650 V 1.35 Ω 4 A TAB TAB STD6N65M2 3 1 3 • Extremely low gate charge 1 DPAK 2 D PAK • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected App

0.13. sihf6n65e.pdf Size:164K _vishay

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SiHF6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

0.14. sihd6n65e.pdf Size:195K _vishay

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SiHD6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

0.15. sihb6n65e.pdf Size:208K _vishay

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SiHB6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

0.16. sihp6n65e.pdf Size:166K _vishay

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SiHP6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

0.17. sihu6n65e.pdf Size:132K _vishay

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SiHU6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.6 • Reduced switching and conduction losses Qg max. (nC) 48 • Ultra low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 11 • Mat

0.18. ixfh46n65x2.pdf Size:113K _ixys

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Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH46N65X2 Power MOSFET ID25 = 46A   RDS(on)    76m     N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25C to 150C 650 V G = Gate D = Drain VDGR TJ = 25C to 150C, RGS = 1M 650 V S =

0.19. 6n65z.pdf Size:245K _utc

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UNISONIC TECHNOLOGIES CO., LTD 6N65Z Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switch

0.20. 6n65.pdf Size:255K _utc

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UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switchin

0.21. mtn6n65fp.pdf Size:276K _cystek

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Spec. No. : C597FP Issued Date : 2010.01.28 CYStech Electronics Corp. Revised Date :2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 1.23Ω (typ.) MTN6N65FP ID : 6A Description The MTN6N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

0.22. ftp06n65 fta06n65.pdf Size:295K _inpower_semi

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FTP06N65 FTA06N65 N-Channel MOSFET Applications: VDSS RDS(ON) (Max.) ID • Adaptor 650V 1.25 Ω 6.0A • LCD Panel Power Features: • Lead Free • Low ON Resistance D • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves G G D G Ordering Information S D S PART NUMBER PACKAGE BRAND TO-220 TO-220F S FTP06N65 TO-220 FTP06N65 Not to Sc

0.23. ndt6n65p.pdf Size:3425K _kexin

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DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N65P TO-251 ■ Features ● VDS (V) = 650V 1 2 3 ● ID = 4.8A (VGS = 10V) ● RDS(ON) < 1.8Ω (VGS = 10V) D ● Low gate charge ( typical 16nC) 1 3 2 G S Unit: mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 Tc=25℃ 4.8 Continuou

0.24. mdi6n65bth.pdf Size:796K _magnachip

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MDI6N65B N-Channel MOSFET 650V, 5.7A, 1.45Ω General Description Features The MDI6N65B use advanced Magnachip’s VDS = 650V MOSFET Technology, which provides low on-state ID = 5.7A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 1.45Ω @VGS = 10V excellent quality. MDI6N65B is suitable device for SMPS, HID and general purpose applications. Applicat

0.25. mdf6n65bth.pdf Size:784K _magnachip

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MDF6N65B N-Channel MOSFET 650V, 6.0A, 1.45Ω General Description Features The MDF6N65B use advanced Magnachip’s VDS = 650V MOSFET Technology, which provides low on-state @VGS = 10V ID = 6.0A resistance, high switching performance and @VGS = 10V RDS(ON) ≤ 1.45Ω excellent quality. MDF6N65B is suitable device for SMPS, HID and general purpose applications. Applications

0.26. msf6n65.pdf Size:427K _bruckewell

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MSF6N65 N-Channel Enhancement Mode Power MOSFET Description The MSF6N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Sim

0.27. hfd6n65u.pdf Size:203K _semihow

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Jan 2014 BVDSS = 650 V RDS(on) typ HFD6N65U / HFU6N65U ID = 4.8 A 650V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD6N65U HFU6N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC

0.28. hfp6n65u.pdf Size:201K _semihow

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July 2012 BVDSS = 650 V RDS(on) typ HFP6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

0.29. hfs6n65u.pdf Size:306K _semihow

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July 2012 BVDSS = 650 V RDS(on) typ HFS6N65U ID = 6.0 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

0.30. tmd6n65g tmu6n65g.pdf Size:603K _trinnotech

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TMD6N65G/TMU6N65G Features VDSS = 715 V @Tjmax  Low gate charge ID = 5.5A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK D I-PAK G S Device Package Marking Remark TMD6N65/TMU6N65 D-PAK/I-PAK TMD6N65/TMU6N65 RoHS TMD6N65G/TMU6N65G D-PAK/I-PAK TM

0.31. tmp6n65 tmpf6n65.pdf Size:577K _trinnotech

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TMP6N65/TMPF6N65 TMP6N65G/TMPF6N65G VDSS = 715 V @Tjmax Features ID = 5.5A  Low gate charge RDS(on) = 1.6 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP6N65 / TMPF6N65 TO-220 / TO-220F TMP6N65 / TMPF6N65 RoHS TMP6N65G / TMPF

0.32. qm06n65f.pdf Size:350K _ubiq

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 QM06N65F 機密 第 1 頁 2011-04-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 Ω 6A most of the synchronous buck converter applications . Applications The QM06N65F meet the RoHS and

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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