All MOSFET. 6N60 Datasheet

 

6N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 6N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 95 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO-220_TO-251_TO-252_TO-220F_TO-220F1_TO-263

6N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

6N60 Datasheet (PDF)

1.1. tmp16n60a tmpf16n60a.pdf Size:618K _update

6N60
6N60

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 16A < 0.47W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP16N60A / TMPF16N60A TO-220 / TO-220F TMP16N60A / TMPF16N60A RoHS TMP16N60AG / TMPF16N60AG TO-220 / TO-220F

1.2. stf6n60m2.pdf Size:1046K _update

6N60
6N60

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 Ω 4.5 A TO-220FP TAB STU6N60M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous

 1.3. stl16n60m2.pdf Size:467K _update

6N60
6N60

STL16N60M2 N-channel 600 V, 0.290 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) D STL16N60M2 650 V 0.355 Ω 8 A • Extremely low gate charge 1 • Excellent output capacitance (COSS) profile 2 • 100% avalanche tested 3 4 • Zener-protected Applications PowerFL

1.4. stw56n60m2-4.pdf Size:907K _update

6N60
6N60

STW56N60M2-4 N-channel 600 V, 0.045 Ω typ., 52 A MDmesh™ M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) D DS @ T R max I STW56N60M2-4 650 V 0.055 Ω 52 A  Excellent switching performance thanks to the extra driving source pin  Extremely low gate charge  Excellent output capacitance (C ) profile oss  100%

 1.5. tmp16n60 tmpf16n60.pdf Size:341K _update

6N60
6N60

TMP16N60/TMPF16N60 TMP16N60G/TMPF16N60G VDSS = 660 V @Tjmax Features ID = 16A  Low gate charge RDS(on) = 0.47 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHS TMP16N60G / TMPF16N60G

1.6. stw56n60m2.pdf Size:676K _update

6N60
6N60

STW56N60M2 N-channel 600 V, 0.045 Ω typ., 52 A MDmesh™ M2 Power MOSFET in a TO-247 package Datasheet - production data Features RDS(on) Order code VDS @ TJmax max ID STW56N60M2 650 V 0.055 Ω 52 A • Extremely low gate charge • Excellent output capacitance (Coss) profile 3 2 • 100% avalanche tested 1 • Zener-protected TO-247 Applications • Switching application

1.7. stf16n60m2.pdf Size:371K _update

6N60
6N60

STF16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF16N60M2 600 V 0.32 Ω 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile 3 • 100% avalanche tested 2 • Zener-protected 1 Applications TO-220FP • Switching applica

1.8. stb6n60m2.pdf Size:1156K _upd

6N60
6N60

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max TAB TAB STB6N60M2 650 V 1.2 Ω 4.5 A 3 STD6N60M2 1 3 1 DPAK 2 • Extremely low gate charge D PAK • Lower RDS(on) x area vs previous generation • Low gate input resistanc

1.9. srm6n60.pdf Size:244K _upd

6N60
6N60

Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60 General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

1.10. stp6n60m2 stu6n60m2.pdf Size:1046K _upd

6N60
6N60

STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) 3 2 Order codes ID 1 TJmax max IPAK 3 STF6N60M2 2 1 STP6N60M2 650 V 1.2 Ω 4.5 A TO-220FP TAB STU6N60M2 • Extremely low gate charge 3 • Lower RDS(on) x area vs previous

1.11. stu16n60m2.pdf Size:439K _upd

6N60
6N60

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP16N60M2 600 V 0.32 Ω 12 A STU16N60M2 3 2 TAB 1 TO-220 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested 3 2 IPAK •

1.12. std6n60m2.pdf Size:1156K _upd

6N60
6N60

STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK and DPAK packages Datasheet - production data Features VDS @ RDS(on) Order codes ID TJmax max TAB TAB STB6N60M2 650 V 1.2 Ω 4.5 A 3 STD6N60M2 1 3 1 DPAK 2 • Extremely low gate charge D PAK • Lower RDS(on) x area vs previous generation • Low gate input resistanc

1.13. irfib6n60apbf.pdf Size:198K _upd

6N60
6N60

PD - 94838 SMPS MOSFET IRFIB6N60APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75Ω 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G

1.14. std16n60m2.pdf Size:440K _upd

6N60
6N60

STD16N60M2 N-channel 600 V, 0.280 Ω typ., 12 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD16N60M2 600 V 0.320 Ω 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Figure 1: Internal schematic diagram Applications D(

1.15. fmp16n60e.pdf Size:468K _upd-mosfet

6N60
6N60

FMP16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.16. fml16n60es.pdf Size:311K _upd-mosfet

6N60
6N60

http://www.fujisemi.com FML16N60ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.17. fmi16n60e.pdf Size:474K _upd-mosfet

6N60
6N60

FMI16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.18. sihfib6n60a.pdf Size:141K _upd-mosfet

6N60
6N60

IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) (Ω)VGS = 10 V 0.75 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 • Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi

1.19. fmi06n60es.pdf Size:489K _upd-mosfet

6N60
6N60

FMI06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.5

1.20. afn06n60t220ft afn06n60t251t.pdf Size:528K _upd-mosfet

6N60
6N60

AFN06N60 Alfa-MOS 600V / 6A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN06N60 is an N-channel enhancement mode Power 600V/3A,RDS(ON)=1.5Ω(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

1.21. fmv16n60es.pdf Size:519K _upd-mosfet

6N60
6N60

FMV16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±

1.22. fmc16n60es.pdf Size:525K _upd-mosfet

6N60
6N60

FMC16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.23. sihh26n60e.pdf Size:151K _upd-mosfet

6N60
6N60

SiHH26N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Fully lead (Pb)-free device VDS (V) at TJ max. 650 • Low figure-of-merit (FOM) Ron x Qg RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.117 • Low input capacitance (Ciss) Qg max. (nC) 116 • Reduced switching and conduction losses Qgs (nC) 18 Qgd (nC) 33 • Ultra low gate charge (Qg) Con

1.24. fmh16n60es.pdf Size:530K _upd-mosfet

6N60
6N60

FMH16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V

1.25. msf6n60.pdf Size:848K _upd-mosfet

6N60
6N60

MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Sim

1.26. stp16n60m2.pdf Size:439K _upd-mosfet

6N60
6N60

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 Ω typ., 12 A MDmesh™ M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP16N60M2 600 V 0.32 Ω 12 A STU16N60M2 3 2 TAB 1 TO-220 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested 3 2 IPAK •

1.27. fmp06n60e.pdf Size:502K _upd-mosfet

6N60
6N60

FMP06N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.28. irfp26n60l irfp26n60lpbf.pdf Size:192K _upd-mosfet

6N60
6N60

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ()VGS = 10 V 0.21 RoHS* • Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

1.29. tman16n60a.pdf Size:457K _upd-mosfet

6N60
6N60

TMAN16N60A N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 16A < 0.47W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMAN16N60A TO3PN TMAN16N60A RoHS Absolute Maximum Ratings Parameter Symbol TMAN16N60A Unit Drain-Source Voltage VDSS 600 V

1.30. fmv06n60es.pdf Size:489K _upd-mosfet

6N60
6N60

FMV06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7

1.31. fmv16n60e.pdf Size:469K _upd-mosfet

6N60
6N60

FMV16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.32. tman16n60.pdf Size:761K _upd-mosfet

6N60
6N60

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 16A < 0.47W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Device Package Marking Remark TMAN16N60 TO-3PN TMAN16N60 RoHS Absolute Maximum Ratings Parameter Symbol TMAN16N60 Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30

1.33. fmv06n60e.pdf Size:469K _upd-mosfet

6N60
6N60

FMV06N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.34. fcb36n60ntm.pdf Size:355K _upd-mosfet

6N60
6N60

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m Features Description • RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies.

1.35. fmp06n60es.pdf Size:478K _upd-mosfet

6N60
6N60

FMP06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.5V

1.36. fca16n60 fca16n60 f109.pdf Size:987K _upd-mosfet

6N60
6N60

December 2008 TM SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor

1.37. fmi16n60es.pdf Size:523K _upd-mosfet

6N60
6N60

FMI16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5

1.38. sff16n60nc.pdf Size:292K _upd-mosfet

6N60
6N60



1.39. sihfp26n60l.pdf Size:192K _upd-mosfet

6N60
6N60

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ()VGS = 10 V 0.21 RoHS* • Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

1.40. hy6n60d.pdf Size:185K _upd-mosfet

6N60
6N60

HY6N60D / HY6N60M 600V / 6.0A 600V, RDS(ON)=1.8Ω@VGS=10V, ID=3.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 2 1 1 D G 2 • In compliance with EU RoHs 2002/95/EC Directives G 3 DS3 S Mec

1.41. hy6n60t.pdf Size:106K _upd-mosfet

6N60
6N60

HY6N60T / HY6N60FT 600V / 6.0A 600V, RDS(ON)=1.8Ω@VGS=10V, ID=3.0A N-Channel Enhancement Mode MOSFET Features • Low ON Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS 1 1 2 2 • In compliance with EU RoHs 2002/95/EC Directives G G 3 3 D D S

1.42. irfb16n60lpbf.pdf Size:865K _upd-mosfet

6N60
6N60

IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Super Fast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.385 RoHS* COMPLIANT • Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 100 Requirements Qgs (nC) 30 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

1.43. fmp16n60es.pdf Size:518K _upd-mosfet

6N60
6N60

FMP16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2±0.5V

1.44. fmc16n60e.pdf Size:474K _upd-mosfet

6N60
6N60

FMC16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.45. fmc06n60es.pdf Size:490K _upd-mosfet

6N60
6N60

FMC06N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.5

1.46. cs6n60a4d.pdf Size:351K _update_mosfet

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A4D General Description: VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.47. hfs6n60u.pdf Size:306K _update_mosfet

6N60
6N60

July 2012 BVDSS = 600 V RDS(on) typ HFS6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

1.48. cs6n60f.pdf Size:231K _update_mosfet

6N60
6N60

BRF6N60(CS6N60F) N-Channel MOSFET/N 沟 MOS 晶体管 用途: 用于高效 DC/DC 转换和功率开关 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: DS 之间导通电阻小、低的门槛电压、反向传输电容小、开关速度快、改良了 dv/dt 能力。 Features: Low R 、Low gate charge、Low C

1.49. cs6n60a3ty.pdf Size:319K _update_mosfet

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A3TY General Description: VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.50. cs6n60a4ty.pdf Size:422K _update_mosfet

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A4TY General Description: VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.51. hfp6n60u.pdf Size:198K _update_mosfet

6N60
6N60

July 2012 BVDSS = 600 V RDS(on) typ HFP6N60U ID = 6.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

1.52. cs6n60fa9ty.pdf Size:413K _update_mosfet

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60F A9TY General Description: VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.53. hfd6n60u.pdf Size:203K _update_mosfet

6N60
6N60

Jan 2014 BVDSS = 600 V RDS(on) typ HFD6N60U / HFU6N60U ID = 4.8 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD6N60U HFU6N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 n

1.54. cs16n60a8h.pdf Size:426K _update_mosfet

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS16N60 A8H VDSS 600 V General Description: ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.55. mtb6n60erev2.pdf Size:192K _motorola

6N60
6N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB6N60E/D Designer's? Data Sheet MTB6N60E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 600 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 1.2 OHM than any existing surface mount package

1.56. mtp6n60erev3.pdf Size:156K _motorola

6N60
6N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6N60E/D Designer's? Data Sheet MTP6N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 6.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performa

1.57. mtb6n60e1rev1.pdf Size:160K _motorola

6N60
6N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB6N60E1/D Product Preview MTB6N60E1 TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK-SL Straight Lead TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 600 VOLTS This advanced TMOS EFET is designed to withstand high RDS(on) = 1.2 OHM energy in the avalanche and commutation modes. The n

1.58. mtb6n60e.pdf Size:197K _motorola

6N60
6N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB6N60E/D Designer's? Data Sheet MTB6N60E TMOS E-FET.? Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 6.0 AMPERES 600 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 1.2 OHM than any existing surface mount package

1.59. mtp6n60e.pdf Size:161K _motorola

6N60
6N60

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP6N60E/D Designer's? Data Sheet MTP6N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 6.0 AMPERES scheme to provide enhanced voltageblocking capability without 600 VOLTS degrading performa

1.60. phx6n60e.pdf Size:69K _philips2

6N60
6N60

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 2.8 A g • Isolated package RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enh

1.61. php6n60e phb6n60e.pdf Size:74K _philips2

6N60
6N60

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 600 V • Stable off-state characteristics • High thermal cycling performance ID = 5.4 A g • Low thermal resistance RDS(ON) ≤ 1.8 Ω s GENERAL DESCRIPTION N-channel, enh

1.62. mtp6n60.pdf Size:153K _st

6N60
6N60

MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D MTP6N60 600 V < 1.2 ? 6.8 A TYPICAL R = 1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING TO-220 SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CO

1.63. stp6n60f.pdf Size:151K _st

6N60
6N60

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP6N60FI 600 V < 1.2 ? 3.8 A TYPICAL RDS(on) = 1 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ISOWATT220 SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATO

1.64. stp6n60fi.pdf Size:316K _st

6N60
6N60

STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 ? 3.8 A TYPICAL R = 1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ISOWATT220 SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATO

1.65. mtp6n60.pdf Size:337K _st2

6N60
6N60

1.66. mth6n60fi.pdf Size:390K _st2

6N60
6N60

1.67. tk16n60w5.pdf Size:246K _toshiba2

6N60
6N60

TK16N60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK16N60W5 TK16N60W5 TK16N60W5 TK16N60W5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Str

1.68. tk16n60w.pdf Size:249K _toshiba2

6N60
6N60

TK16N60W MOSFETs Silicon N-Channel MOS (DTMOS) TK16N60W TK16N60W TK16N60W TK16N60W 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) En

1.69. fqd6n60c.pdf Size:678K _fairchild_semi

6N60
6N60

QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistanc

1.70. fqp6n60c.pdf Size:931K _fairchild_semi

6N60
6N60

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

1.71. fqp6n60c fqpf6n60c.pdf Size:931K _fairchild_semi

6N60
6N60

QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to Fast switch

1.72. fca36n60nf.pdf Size:268K _fairchild_semi

6N60
6N60

March 2013 FCA36N60NF N-Channel SupreMOS® FRFET® MOSFET 600 V, 34.9 A, 95 mΩ Features Description • RDS(on) = 80 mΩ (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next- generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 86 nC) employing a deep trench filling process that differentiate it from th

1.73. fcb36n60n.pdf Size:355K _fairchild_semi

6N60
6N60

September 2010 SupreMOSTM FCB36N60N N-Channel MOSFET 600V, 36A, 90m? Features Description RDS(on) = 81m? ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. By utilizing

1.74. fch76n60nf.pdf Size:547K _fairchild_semi

6N60
6N60

January 2011 SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description RDS(on) = 28.7m? ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 230nC) process that differentiates it from preceding multi-epi based technologies. By utilizing t

1.75. fcpf16n60.pdf Size:639K _fairchild_semi

6N60
6N60

August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET® MOSFET 600 V, 16 A, 260 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 220 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 55 nC ) r

1.76. fca76n60n.pdf Size:715K _fairchild_semi

6N60
6N60

May 2010 SupreMOS TM FCA76N60N N-Channel MOSFET 600V, 76A, 36m? Features Description RDS(on) = 28m? ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 218nC) process that differentiates it from preceding multi-epi based Low Effective Output Capacita

1.77. fcp36n60n.pdf Size:408K _fairchild_semi

6N60
6N60

November 2010 SupreMOSTM FCP36N60N tm N-Channel MOSFET 600V, 36A, 90m? Features Description RDS(on) = 81m? ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC) process that differentiates it from preceding multi-epi based technologies. By utilizi

1.78. fqpf6n60c.pdf Size:931K _fairchild_semi

6N60
6N60

® QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

1.79. fqb6n60ctm.pdf Size:681K _fairchild_semi

6N60
6N60

® QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

1.80. fcpf36n60n.pdf Size:845K _fairchild_semi

6N60
6N60

December 2013 FCP36N60N / FCPF36N60NT N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features Description • RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 86 nC) employing a deep trench filling process that differentiates it from

1.81. fcp16n60.pdf Size:639K _fairchild_semi

6N60
6N60

August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET® MOSFET 600 V, 16 A, 260 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 220 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 55 nC ) r

1.82. fca16n60n.pdf Size:518K _fairchild_semi

6N60
6N60

August 2009 SupreMOSTM FCA16N60N N-Channel MOSFET 600V, 16A, 0.170? Features Description RDS(on) = 0.17? ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based technologies. By utilizing th

1.83. fqp6n60.pdf Size:534K _fairchild_semi

6N60
6N60

April 2000 TM QFET QFET QFET QFET FQP6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been esp

1.84. fqb6n60tm.pdf Size:842K _fairchild_semi

6N60
6N60

October 2008 QFET® FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially

1.85. fcp16n60n fcpf16n60nt.pdf Size:685K _fairchild_semi

6N60
6N60

August 2009 SupreMOSTM FCP16N60N / FCPF16N60NT N-Channel MOSFET 600V, 16A, 0.170? Features Description RDS(on) = 0.17? ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC) process that differentiates it from preceding multi-epi based technologies. B

1.86. fqpf6n60.pdf Size:542K _fairchild_semi

6N60
6N60

April 2000 TM QFET QFET QFET QFET FQPF6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.6A, 600V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been es

1.87. fcp16n60 fcpf16n60.pdf Size:1208K _fairchild_semi

6N60
6N60

December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge performance. Thi

1.88. fch76n60n.pdf Size:736K _fairchild_semi

6N60
6N60

May 2010 SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36m? Features Description RDS(on) = 28m? ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 218nC) process that differentiates it from preceding multi-epi based technologies. By utilizing this a

1.89. fdp6n60zu fdpf6n60zut.pdf Size:525K _fairchild_semi

6N60
6N60

April 2009 UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2? Features Description RDS(on) = 1.7? ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 14.5nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been esp

1.90. fqd6n60ctm.pdf Size:679K _fairchild_semi

6N60
6N60

® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s

1.91. fqi6n60ctu.pdf Size:681K _fairchild_semi

6N60
6N60

® QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 7 pF) This advanced technology has been especially tailored to

1.92. sgr6n60uf.pdf Size:544K _fairchild_semi

6N60

1.93. irfb16n60l.pdf Size:551K _international_rectifier

6N60
6N60

FOR REVIEW ONLY PD - TBD PD - 94631 SMPS MOSFET IRFB16N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m? 130ns 16A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lowe

1.94. irfb16n60lpbf.pdf Size:211K _international_rectifier

6N60
6N60

PD - 95471 SMPS MOSFET IRFB16N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m? 130ns 16A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate char

1.95. irfib6n60a.pdf Size:149K _international_rectifier

6N60
6N60

PD - 91813 SMPS MOSFET IRFIB6N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75W 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capac

1.96. sgp6n60ufd.pdf Size:272K _samsung

6N60
6N60

N-CHANNEL IGBT SGP6N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristi

1.97. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

6N60



1.98. sgw6n60ufd.pdf Size:268K _samsung

6N60
6N60

N-CHANNEL IGBT SGW6N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristi

1.99. sgu6n60uf.pdf Size:217K _samsung

6N60
6N60

N-CHANNEL IGBT SGU6N60UF FEATURES I - PAK * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES

1.100. sgw6n60uf.pdf Size:219K _samsung

6N60
6N60

N-CHANNEL IGBT SGW6N60UF FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES

1.101. sgp6n60uf.pdf Size:219K _samsung

6N60
6N60

N-CHANNEL IGBT SGP6N60UF FEATURES TO-220 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES

1.102. irfp26n60l sihfp26n60l.pdf Size:188K _vishay

6N60
6N60

IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (?)VGS = 10 V 0.21 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 180 COMPLIANT Requirements Qgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd (nC) 85

1.103. irfib6n60a sihfib6n60a.pdf Size:139K _vishay

6N60
6N60

IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) (?)VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configuration S

1.104. igd06n60trev2 1.pdf Size:758K _infineon

6N60
6N60

IGD06N60T TrenchStop Series q Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temperature stable behavior Low

1.105. spa06n60c3 rev1.3.pdf Size:222K _infineon

6N60
6N60

SPA06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge 1) 6.2 A I D Periodic avalanche rated High peak current capability Ultra low effective capacitances P-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated package (2500 V AC;

1.106. igp06n60trev2 2g[1].pdf Size:371K _infineon

6N60
6N60

IGP06N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temperature stable behav

1.107. ikb06n60trev2 3g.pdf Size:1188K _infineon

6N60
6N60

IKB06N60T TrenchStop series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, G E pumps and vacuum cleaners TrenchStop and Fieldstop te

1.108. sgp06n60 sgd06n60 rev2 2g.pdf Size:340K _infineon

6N60
6N60

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls G E - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK)

1.109. skb06n60hs rev2 3g.pdf Size:1190K _infineon

6N60
6N60

SKB06N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature

1.110. ihd06n60ra 1 3.pdf Size:819K _infineon

6N60
6N60

IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers: G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive

1.111. sgb06n60 rev2 2.pdf Size:784K _infineon

6N60
6N60

SGB06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls G E - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D?-PAK) - parallel

1.112. ika06n60trev2 3g.pdf Size:853K _infineon

6N60
6N60

IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distri

1.113. spd06n60c3 rev.1.5.pdf Size:636K _infineon

6N60
6N60

SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPD06N60C3

1.114. skp06n60 ska06n60 rev2 3g.pdf Size:461K _infineon

6N60
6N60

SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperatu

1.115. skb06n60 rev2 2g.pdf Size:1147K _infineon

6N60
6N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight parameter dist

1.116. spp06n60c3 rev1.4.pdf Size:222K _infineon

6N60
6N60

SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 ? DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO220-3-1 Extreme dv /dt rated Improved transconductance Type Package Ordering Code Marking SPP06N

1.117. ikp06n60trev2 3g[1].pdf Size:398K _infineon

6N60
6N60

IKP06N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterru

1.118. ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Size:166K _ixys

6N60
6N60

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 440mΩ ≤ Ω ≤ Ω IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

1.119. ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf Size:192K _ixys

6N60
6N60

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18? 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25? 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25C to 150C 600 600 V G VDGR TJ = 25C to 150C; RGS = 1 M? 600 600

1.120. ixtm6n60 ixtm6n60a ixtp6n60 ixtp6n60a.pdf Size:63K _ixys

6N60



1.121. ixfh36n60p ixft36n60p ixfk36n60p.pdf Size:268K _ixys

6N60
6N60

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET ? ? IXFT 36N60P RDS(on) ? 190 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V G D VGSM Trans

1.122. ixgh36n60b3c1.pdf Size:180K _ixys

6N60
6N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G (TAB) VCGR TJ = 25C to 150C, RGE = 1M? 600 V C E VGES Continuous 20 V VGEM Transient

1.123. ixz316n60.pdf Size:136K _ixys

6N60
6N60

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) ≤ Ω Ω Ω Symbol Test Conditions Maximum Ratings 0.47 Ω TJ = 25°C to 150°C VDSS 600 V PDC = 880 W TJ = 25°C to 150°C; RGS = 1 MΩ VDGR

1.124. ixfk26n60q ixfx26n60q.pdf Size:104K _ixys

6N60
6N60

IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs Ω RDS(on) = 0.25 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Conti

1.125. ixzr16n60a ixzr16n60b.pdf Size:163K _ixys

6N60
6N60

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) ≤ 0.56 Ω Ω Ω

1.126. ixfr36n60p.pdf Size:144K _ixys

6N60
6N60

IXFR 36N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 20 A Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) E153432 VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continu

1.127. ixfh26n60q ixft26n60q.pdf Size:107K _ixys

6N60
6N60

IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs ? RDS(on) = 0.25 ? ? ? ? Q-Class ? ? trr ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 T

1.128. ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf Size:230K _ixys

6N60
6N60

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V TO-3P (IXTQ) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D ID25

1.129. ixfh26n60p ixft26n60p ixfv26n60p.pdf Size:197K _ixys

6N60
6N60

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET ? ? ? ? IXFV26N60P RDS(on) ? 270 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV26N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V G VGSM Transient 40

1.130. ndf06n60z ndp06n60z.pdf Size:112K _onsemi

6N60
6N60

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features Low ON Resistance Low Gate Charge http://onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 600 V 1.2 ? ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol NDF NDP Unit N-Channel Dr

1.131. 6n60z.pdf Size:220K _utc

6N60
6N60

UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swit

1.132. 6n60.pdf Size:280K _utc

6N60
6N60

UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

1.133. ssq6n60.pdf Size:477K _secos

6N60
6N60

SSQ6N60 2.6A, 600V, RDS(ON) 1500m? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P D FEATURES C ? Low RDS(on) Technology. B R ? Low thermal impedance. T ? Fast switching speed. A E S G APPLICATIONS F I ? Electronic ballast. H J ? Electronic transformer K ? Switch mode powe

1.134. kf6n60d-i.pdf Size:482K _kec

6N60
6N60

KF6N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L C D _ A 6.60 + 0.20 avalanche characteristics. It is mainly suitable for electronic ballast and _ B 6.10 + 0.20 _ C 5.

1.135. kf6n60p-f.pdf Size:1221K _kec

6N60
6N60

KF6N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS(Min.)= 600V, ID= 6A ·

1.136. ixga16n60b2.pdf Size:221K _igbt

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 ≤ VCE(sat) ≤ ≤ 2.3V ≤ ≤ tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-220AB (IXGP) VGEM Transient ±30 V IC25 TC = 25°C40 A IC110 TC = 110°

1.137. ixgc16n60c2d1.pdf Size:533K _igbt

6N60
6N60

IXGC 16N60C2 HiPerFASTTM IGBT VCES = 600 V IXGC 16N60C2D1 C2-Class High Speed IC25 = 20 A IGBT in ISOPLUS220TM Case VCE(sat) = 3.0 V Electrically Isolated Back Surface tfi(typ) = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

1.138. ixgh36n60b3d4.pdf Size:200K _igbt

6N60
6N60

VCES = 600V GenX3TM 600V IGBT IXGH36N60B3D4 IC110 = 36A ≤ VCE(sat) ≤ ≤ 1.8V ≤ ≤ Medium speed low Vsat PT IGBT for 5-40kHz switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G TAB C VGEM Transient ±30 V E IC110 TC = 110°C 36 A IF110 TC = 110°C 10 A

1.139. sgd06n60.pdf Size:338K _igbt

6N60
6N60

 SGP06N60 SGD06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses C • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

1.140. skb06n60hs.pdf Size:1184K _igbt

6N60
6N60

SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedn

1.141. ska06n60.pdf Size:459K _igbt

6N60
6N60

SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: Motor controls, Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn

1.142. ixga16n60c2d1.pdf Size:216K _igbt

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C

1.143. skp06n60.pdf Size:459K _igbt

6N60
6N60

SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: Motor controls, Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn

1.144. ixgc16n60c2.pdf Size:533K _igbt

6N60
6N60

IXGC 16N60C2 HiPerFASTTM IGBT VCES = 600 V IXGC 16N60C2D1 C2-Class High Speed IC25 = 20 A IGBT in ISOPLUS220TM Case VCE(sat) = 3.0 V Electrically Isolated Back Surface tfi(typ) = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

1.145. ixga16n60b2d1.pdf Size:214K _igbt

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 2.3V ≤ ≤ IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C (

1.146. sgb06n60.pdf Size:782K _igbt

6N60
6N60

 SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses C • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D²-P

1.147. ixgh56n60b3.pdf Size:179K _igbt

6N60
6N60

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60B3 IC110 = 56A ≤ VCE(sat) ≤ 1.80V ≤ ≤ ≤ Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G CD ES (TAB) VGES Continuous ± 20 V VGEM Transient ± 30 V G = Gate C = Collecto

1.148. ixga36n60a3.pdf Size:220K _igbt

6N60
6N60

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGE

1.149. ixga16n60c2.pdf Size:197K _igbt

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2 C2-Class IC110 = 16A IXGP16N60C2 ≤ High Speed VCE(sat) ≤ ≤ 3.0V ≤ ≤ tfi(typ) = 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-220AB (IXGP) VGEM Transient ±30 V IC25 TC = 25°C40 A IC110 TC = 110

1.150. ixgh36n60b3d1.pdf Size:173K _igbt

6N60
6N60

GenX3TM 600V IGBT VCES = 600V IXGH36N60B3D1 w/ Diode IC110 = 36A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C (TAB) E VGES Continuous ± 20 V VGEM Transient ± 30 V IC110 TC = 110°C 36 A G = Gate C = Col

1.151. sgp06n60.pdf Size:338K _igbt

6N60
6N60

 SGP06N60 SGD06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses C • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

1.152. ixgh36n60a3.pdf Size:220K _igbt

6N60
6N60

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGE

1.153. ixgh36n60b3c1.pdf Size:178K _igbt

6N60
6N60

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A ≤ Diode VCE(sat) ≤ 1.8V ≤ ≤ ≤ tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C E VGES Continuous ± 20

1.154. ixgh56n60b3d1.pdf Size:199K _igbt

6N60
6N60

VCES = 600V GenX3TM 600V IGBT IXGH56N60B3D1 IC110 = 56A ≤ VCE(sat) ≤ 1.8V ≤ ≤ ≤ Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G IC110 TC = 110°C 56 A C (TAB) E ICM TC = 25°C, 1ms 350 A

1.155. ixgh16n60c2d1.pdf Size:216K _igbt

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C

1.156. ixgh36n60a3d4.pdf Size:196K _igbt

6N60
6N60

Preliminary Technical Information VCES = 600V GenX3TM 600V IGBT IXGH36N60A3D4 with Diode IC110 = 36A ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V C (TAB) E IC1

1.157. ixgc16n60b2d1.pdf Size:82K _igbt

6N60
6N60

IXGC 16N60B2 HiPerFASTTM IGBT VCES = 600 V IXGC 16N60B2D1 B2-Class High Speed IC25 = 28 A IGBT in ISOPLUS220TM Case VCE(sat) = 2.3 V Electrically Isolated Back Surface tfi(typ) = 80 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

1.158. ixgc16n60b2.pdf Size:82K _igbt

6N60
6N60

IXGC 16N60B2 HiPerFASTTM IGBT VCES = 600 V IXGC 16N60B2D1 B2-Class High Speed IC25 = 28 A IGBT in ISOPLUS220TM Case VCE(sat) = 2.3 V Electrically Isolated Back Surface tfi(typ) = 80 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V

1.159. ixgh36n60b3.pdf Size:160K _igbt

6N60
6N60

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3 IC110 = 36A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V C Tab E VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 92 A

1.160. ixgh56n60a3.pdf Size:175K _igbt

6N60
6N60

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60A3 IC110 = 56A ≤ VCE(sat) ≤ 1.35V ≤ ≤ ≤ Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G CD ES (TAB) VGES Continuous ± 20 V VGEM Transient ± 30 V G = Gate C = Collector

1.161. ixgh16n60b2d1.pdf Size:214K _igbt

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 2.3V ≤ ≤ IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C (

1.162. skb06n60.pdf Size:1142K _igbt

6N60
6N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers: - very tight

1.163. ixgp16n60c2.pdf Size:197K _igbt_a

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2 C2-Class IC110 = 16A IXGP16N60C2 ≤ High Speed VCE(sat) ≤ ≤ 3.0V ≤ ≤ tfi(typ) = 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-220AB (IXGP) VGEM Transient ±30 V IC25 TC = 25°C40 A IC110 TC = 110

1.164. igp06n60t.pdf Size:489K _igbt_a

6N60
6N60

IGP06N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G E  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior 

1.165. iku06n60r.pdf Size:1800K _igbt_a

6N60
6N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD06N60R, IKU06N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD06N60R, IKU06N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

1.166. igd06n60t.pdf Size:756K _igbt_a

6N60
6N60

IGD06N60T TrenchStop® Series q Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology Features: C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • TrenchStop® and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temperature stabl

1.167. ikp06n60t.pdf Size:515K _igbt_a

6N60
6N60

IKP06N60T TRENCHSTOP™ Series p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : G E - Variable Speed Drive for washing machines, air conditioners and inducti

1.168. ikd06n60ra.pdf Size:2318K _igbt_a

6N60
6N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD06N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD06N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 6

1.169. ixgp16n60b2.pdf Size:221K _igbt_a

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 ≤ VCE(sat) ≤ ≤ 2.3V ≤ ≤ tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25°C to 150°C 600 V C (Tab) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V TO-220AB (IXGP) VGEM Transient ±30 V IC25 TC = 25°C40 A IC110 TC = 110°

1.170. ixgp36n60a3.pdf Size:220K _igbt_a

6N60
6N60

Preliminary Technical Information IXGA36N60A3 VCES = 600V GenX3TM 600V IGBT IXGP36N60A3 IC110 = 36A IXGH36N60A3 ≤ VCE(sat) ≤ ≤ 1.4V ≤ ≤ Ultra Low Vsat PT IGBT for up to 5kHz switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E (TAB) VCES TC = 25°C to 150°C 600 V TO-220 (IXGP) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGE

1.171. ihd06n60ra.pdf Size:767K _igbt_a

6N60
6N60

IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop® technology applications offers: G E - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to pos

1.172. ikb06n60t.pdf Size:635K _igbt_a

6N60
6N60

IKB06N60T TrenchStop® series p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s  Designed for frequency inverters for washing machines, fans, G E pumps and vacuum cleaners  Tre

1.173. ikd06n60r.pdf Size:1800K _igbt_a

6N60
6N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD06N60R, IKU06N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD06N60R, IKU06N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

1.174. ixgp16n60c2d1.pdf Size:216K _igbt_a

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60C2D1 C2-Class High Speed IC110 = 16A IXGP16N60C2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 3.0V ≤ ≤ IXGH16N60C2D1 tfi(typ) = 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C

1.175. ixsh16n60u1.pdf Size:35K _igbt_a

6N60
6N60

IXSH 16N60U1 VCES = 600V Low VCE(sat) IGBT IC25 = 16A with Diode VCE(sat)typ = 1.8V Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ± 20 V C (TAB) G VGEM Transient ± 30 V C E IC25 TC = 25°C32 A IC90 TC = 90°C16 A G = Gate, C = Collecto

1.176. ika06n60t.pdf Size:514K _igbt_a

6N60
6N60

IKA06N60T TRENCHSTOP™ Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : G E - very tight parame

1.177. ixgp16n60b2d1.pdf Size:214K _igbt_a

6N60
6N60

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 ≤ w/ Diode VCE(sat) ≤ ≤ 2.3V ≤ ≤ IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C C (

1.178. ikd06n60-rf.pdf Size:1865K _igbt_a

6N60
6N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD06N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD06N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

1.179. h06n60.pdf Size:71K _hsmc

6N60
6N60

Spec. No. : MOS200402 HI-SINCERITY Issued Date : 2004.04.01 Revised Date : 2005.03.10 MICROELECTRONICS CORP. Page No. : 1/6 H06N60 Series Pin Assignment H06N60 Series Tab 3-Lead Plastic TO-263 N-Channel Power Field Effect Transistor Package Code: U Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source 1 Description Tab This high voltage MOSFET uses an advanced termination scheme to

1.180. sdf06n60 sdp06n60.pdf Size:188K _samhop

6N60
6N60

SDP06N60 SDF06N60 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Typ VDSS ID Rugged and reliable. 600V 6A 1.3 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package Mar

1.181. sdu06n60 sdd06n60.pdf Size:130K _samhop

6N60
6N60

Green Product SDU/D06N60 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 600V 6A 1.18 @ VGS=10V Suface Mount Package. D G G S S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)

1.182. sdf6n60.pdf Size:165K _solitron

6N60



1.183. ssf6n60g.pdf Size:443K _silikron

6N60
6N60

 SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32Ω (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.184. ftp06n60c fta06n60c.pdf Size:473K _inpower_semi

6N60
6N60

FTP06N60C FTA06N60C Pb N-Channel MOSFET Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 1.25 Ω 6A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-220F TO-220 S PART NUMBER

1.185. brd6n60.pdf Size:751K _blue-rocket-elect

6N60
6N60

BRD6N60(BRCS6N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features DS 之间导通电阻小、低的门槛电压、反向传输电容小、开关速度快、改良了 dv/dt 能力。 Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability.

1.186. brf6n60.pdf Size:869K _blue-rocket-elect

6N60
6N60

BRF6N60(BRCS6N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features DS 之间导通电阻小、低的门槛电压、反向传输电容小、开关速度快、改良了 dv/dt 能力。 Low RDS(ON), Low gate charge, Low Crss , Fast switching, Improved dv/dt capability.

1.187. cs6n60 a3ty.pdf Size:319K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A3TY General Description: VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.188. cs6n60 a8h.pdf Size:295K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A8H General Description: VDSS 600 V CS6N60 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.189. cs6n60 a3d.pdf Size:353K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A3D General Description: VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

1.190. cs6n60f a9ty.pdf Size:413K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60F A9TY General Description: VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.191. cs6n60 a7h.pdf Size:308K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A7H General Description: VDSS 600 V CS6N60 A7H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.192. cs6n60 a4d.pdf Size:351K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A4D General Description: VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.193. cs16n60 a8h.pdf Size:426K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS16N60 A8H VDSS 600 V General Description: ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25℃) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.194. cs6n60 a4h.pdf Size:306K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A4H General Description: VDSS 600 V CS6N60 A4H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

1.195. cs6n60f a9h.pdf Size:302K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60F A9H General Description: VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.196. cs6n60 a3hdy.pdf Size:230K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A3HDY General Description: VDSS 600 V CS6N60 A3HDY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.197. cs6n60 a4ty.pdf Size:422K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60 A4TY General Description: VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.198. cs6n60f a9h-g.pdf Size:302K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS6N60F A9H-G General Description: VDSS 600 V CS6N60F A9H-G, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.199. cs16n60f a9h.pdf Size:306K _crhj

6N60
6N60

Silicon N-Channel Power MOSFET R ○ CS16N60F A9H VDSS 600 V General Description: ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25℃) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.200. cm6n60.pdf Size:123K _jdsemi

6N60
6N60

R C66 MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于 LD E 驱动、电源适配器 等各类功率开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小 3 .封装

1.201. cm6n60f.pdf Size:125K _jdsemi

6N60
6N60

R C66F MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于 LD E 驱动、电源适配器 等各类功率开关电路 2 .主要特点 1 开关速度快 2 通态电阻小,输入电容小 3

1.202. ndt6n60p.pdf Size:1327K _kexin

6N60
6N60

DIP Type MOSFET N-Channel MOSFET NDT6N60P TO-251 ■ Features ● VDS (V) = 600V 1 2 3 ● ID = 6.2 A (VGS = 10V) ● RDS(ON) < 1.5Ω (VGS = 10V) ● Fast switching capability ● Low reverse transfer Capacitance 1 3 2 Drain Unit: mm Gate Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage V

1.203. ndt6n60.pdf Size:1815K _kexin

6N60
6N60

SMD Type MOSFET N-Channel MOSFET NDT6N60 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) = 600V ● ID = 6 A (VGS = 10V) ● RDS(ON) < 1.7Ω (VGS = 10V) 0.127 0.80+0.1 max -0.1 ● Low Gate Charge ● Low Reverse transfer capacitances 1 Gate 2.3 0.60+ 0.1 - 0.1 2 Drain +0.15 4.60 -0.15 3 Source 4 Drain

1.204. mdf6n60bth.pdf Size:808K _magnachip

6N60
6N60



1.205. mdi6n60bth.pdf Size:789K _magnachip

6N60
6N60

 MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45Ω Ω Ω Ω General Description Features The MDI6N60B uses advanced MagnaChip’s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) ≤ 1.45Ω @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi

1.206. mdd6n60grh.pdf Size:833K _magnachip

6N60
6N60



1.207. mdf6n60th.pdf Size:1095K _magnachip

6N60
6N60



1.208. mdp6n60th.pdf Size:1095K _magnachip

6N60
6N60

 MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4Ω General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip’s MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 1.4Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable device for SM

Datasheet: 3N65K , 4N65 , 4N65Z , 4N65K , 5N65 , 5N65K , 6N65 , 5N60 , BUZ90A , 6N60Z , 7N60A , 7N60 , 7N60Z , 7N60K , 8N60 , 10N60 , 10N60K .

 
Back to Top

 


6N60
  6N60
  6N60
  6N60
 

social 

LIST

Last Update

MOSFET: KO3407 | KO3404 | KO3403 | KO3402 | KN0606L | KML0D4P20E | KML0D4N20E | KMDF2C03HD | KMB075N75P | KI7540DP | KI6968BEDQ | KI5P03DY | KI5935DC | KI5908DC | KI5905DC |

 

 

 
Back to Top