Справочник MOSFET. 6N60

 

6N60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 6N60
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 125 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 6.2 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 70 ns
   Выходная емкость (Cd): 95 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm
   Тип корпуса: TO-220 TO-251 TO-252 TO-220F TO-220F1 TO-263

 Аналог (замена) для 6N60

 

 

6N60 Datasheet (PDF)

 ..1. Size:280K  utc
6n60.pdf

6N60
6N60

UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 0.1. Size:75K  1
h06n60u h06n60e h06n60f.pdf

6N60
6N60

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

 0.2. Size:623K  1
sgs6n60ufd.pdf

6N60
6N60

April 2001 IGBTSGS6N60UFDUltra-Fast IGBTGeneral Description FeaturesFairchild's UFD series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UFD series is designed for applications such as motor High input impedancecontrol and general inverters where

 0.3. Size:562K  1
sgs6n60uf.pdf

6N60
6N60

April 2001 IGBTSGS6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where hig

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ssp6n55 ssp6n60.pdf

6N60
6N60

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ssh6n55 ssh6n60.pdf

6N60
6N60

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 0.6. Size:133K  1
ndf06n60z ndp06n60z.pdf

6N60
6N60

NDF06N60Z, NDP06N60ZN-Channel Power MOSFET0.98 W, 600 VoltsFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AApplications600 V0.98 Adapter (Notebook, Printer, Gaming) LCD Panel PowerN-Channel Lighting BallastsD (2)ABSOLUTE MAXIMUM RA

 0.7. Size:284K  1
sss6n55 sss6n60.pdf

6N60
6N60

 0.8. Size:73K  motorola
mtw6n60e.pdf

6N60
6N60

 0.9. Size:160K  motorola
mtb6n60e1rev1.pdf

6N60
6N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB6N60E1/DProduct PreviewMTB6N60E1TMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK-SL Straight LeadTMOS P

 0.10. Size:156K  motorola
mtp6n60erev3.pdf

6N60
6N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP6N60E/DDesigner's Data SheetMTP6N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorN Channel Enhance

 0.11. Size:192K  motorola
mtb6n60erev2.pdf

6N60
6N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB6N60E/DDesigner's Data SheetMTB6N60ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

 0.12. Size:28K  motorola
mtp6n60e.pdf

6N60
6N60

TMOS E-FET.MTP6N60EPower Field Effect TransistorON Semiconductor Preferred DeviceN Channel Enhancement Mode Silicon GateThis high voltage MOSFET uses an advanced termination schemeTMOS P

 0.13. Size:197K  motorola
mtb6n60e.pdf

6N60
6N60

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB6N60E/DDesigner's Data SheetMTB6N60ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

 0.14. Size:232K  motorola
mth6n55 mth6n60 mtm6n60.pdf

6N60
6N60

 0.15. Size:551K  international rectifier
irfb16n60l.pdf

6N60
6N60

FOR REVIEW ONLYPD - TBDPD - 94631SMPS MOSFETIRFB16N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS appli

 0.16. Size:149K  international rectifier
irfib6n60a.pdf

6N60
6N60

PD - 91813SMPS MOSFET IRFIB6N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75W 5.5Al High speed power switchingl High Voltage Isolation = 2.5KVRMSBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized

 0.17. Size:211K  international rectifier
irfb16n60lpbf.pdf

6N60
6N60

PD - 95471SMPS MOSFETIRFB16N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

 0.18. Size:198K  international rectifier
irfib6n60apbf.pdf

6N60
6N60

PD - 94838SMPS MOSFETIRFIB6N60APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 5.5Al High speed power switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG

 0.19. Size:69K  philips
phx6n60e.pdf

6N60
6N60

Philips Semiconductors Product specification PowerMOS transistors PHX6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Isolated packageRDS(ON) 1.8 sGENERAL DESCRIPTION PINNING SOT186AN-channel, enh

 0.20. Size:74K  philips
php6n60e phb6n60e.pdf

6N60
6N60

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh

 0.21. Size:800K  st
stp26n60m2 stw26n60m2.pdf

6N60
6N60

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 typ., 20 A MDmesh M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABV @ R DS DS(on)Order code I P D TOTT max. JmaxSTP26N60M2 650 V 0.165 20 A 169 W STW26N60M2 33221 Extremely low gate charge 1 Excellent output capacitance (C ) profile OSS 100% avala

 0.22. Size:467K  st
stl16n60m2.pdf

6N60
6N60

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL

 0.23. Size:1053K  st
stf16n60m6.pdf

6N60
6N60

 0.24. Size:153K  st
mtp6n60.pdf

6N60
6N60

MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V

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mtp6n60 2.pdf

6N60
6N60

 0.26. Size:1046K  st
stf6n60m2 stp6n60m2 stu6n60m2.pdf

6N60
6N60

STF6N60M2, STP6N60M2, STU6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 32 Order codes ID1TJmax maxIPAK3STF6N60M221STP6N60M2 650 V 1.2 4.5 ATO-220FP TABSTU6N60M2 Extremely low gate charge3 Lower RDS(on) x area vs previous

 0.27. Size:907K  st
stw56n60m2-4.pdf

6N60
6N60

STW56N60M2-4 N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW56N60M2-4 650 V 0.055 52 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100%

 0.28. Size:676K  st
stw56n60m2.pdf

6N60
6N60

STW56N60M2N-channel 600 V, 0.045 typ., 52 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW56N60M2 650 V 0.055 52 A Extremely low gate charge Excellent output capacitance (Coss) profile 32 100% avalanche tested1 Zener-protectedTO-247Applications Switching application

 0.29. Size:316K  st
stp6n60fi.pdf

6N60
6N60

STP6N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP6N60FI 600 V

 0.30. Size:440K  st
std16n60m2.pdf

6N60
6N60

STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

 0.31. Size:439K  st
stp16n60m2 stu16n60m2.pdf

6N60
6N60

STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP16N60M2 600 V 0.32 12 A STU16N60M2 3 2TAB1TO-220 Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested 32IPAK

 0.32. Size:1156K  st
stb6n60m2 std6n60m2.pdf

6N60
6N60

STB6N60M2, STD6N60M2N-channel 600 V, 1.06 typ., 4.5 A MDmesh II Plus low Qg Power MOSFET in D2PAK and DPAK packagesDatasheet - production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTAB TABSTB6N60M2650 V 1.2 4.5 A3STD6N60M2131DPAK2 Extremely low gate chargeD PAK Lower RDS(on) x area vs previous generation Low gate input resistanc

 0.33. Size:390K  st
mth6n60fi.pdf

6N60
6N60

 0.34. Size:330K  st
stu6n60dm2.pdf

6N60
6N60

STU6N60DM2DatasheetN-channel 600 V, 0.95 typ., 5 A MDmesh DM2 Power MOSFET in an IPAK packageFeaturesVDS RDS(on) max. ID PTOTTAB Order codeSTU6N60DM2 600 V 1.10 5 A 60 W32 Fast-recovery body diode1 Extremely low gate charge and input capacitance Low on-resistanceIPAK 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Zen

 0.35. Size:371K  st
stf16n60m2.pdf

6N60
6N60

STF16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF16N60M2 600 V 0.32 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-220FP Switching applica

 0.36. Size:415K  st
stp36n60m6 stw36n60m6.pdf

6N60
6N60

STP36N60M6, STW36N60M6N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP36N60M6 600 V 99 m 30 A STW36N60M6 33 Reduced switching losses 221 Lower R x area vs previous generation DS(on)1 Low gate input resistance 100% avalanche tested

 0.37. Size:151K  st
stp6n60f.pdf

6N60
6N60

STP6N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP6N60FI 600 V

 0.38. Size:246K  toshiba
tk16n60w5.pdf

6N60
6N60

TK16N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16N60W5TK16N60W5TK16N60W5TK16N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 0.39. Size:249K  toshiba
tk16n60w.pdf

6N60
6N60

TK16N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16N60WTK16N60WTK16N60WTK16N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 0.40. Size:518K  fairchild semi
fca16n60n.pdf

6N60
6N60

August 2009SupreMOSTMFCA16N60N N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedtechnologies. By

 0.41. Size:715K  fairchild semi
fca76n60n.pdf

6N60
6N60

May 2010SupreMOS TMFCA76N60NN-Channel MOSFET 600V, 76A, 36mFeatures Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 218nC)process that differentiates it from preceding multi-epi based Low Effective Ou

 0.42. Size:534K  fairchild semi
fqp6n60.pdf

6N60
6N60

April 2000TMQFETQFETQFETQFETFQP6N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been esp

 0.43. Size:544K  fairchild semi
sgr6n60uf.pdf

6N60
6N60

IGBTSGR6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed swit

 0.44. Size:736K  fairchild semi
fch76n60n.pdf

6N60
6N60

May 2010SupreMOSTMFCH76N60NN-Channel MOSFET 600V, 76A, 36mFeatures Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 218nC)process that differentiates it from preceding multi-epi based technologies. By utili

 0.45. Size:681K  fairchild semi
fqb6n60ctm fqi6n60ctu.pdf

6N60
6N60

QFETFQB6N60C / FQI6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to

 0.46. Size:639K  fairchild semi
fcp16n60 fcpf16n60.pdf

6N60
6N60

August 2014FCP16N60 / FCPF16N60N-Channel SuperFET MOSFET600 V, 16 A, 260 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC )r

 0.47. Size:987K  fairchild semi
fca16n60 fca16n60 f109.pdf

6N60
6N60

December 2008 TMSuperFETFCA16N60 / FCA16N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfor

 0.48. Size:679K  fairchild semi
fqd6n60ctm.pdf

6N60
6N60

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

 0.49. Size:842K  fairchild semi
fqb6n60tm.pdf

6N60
6N60

October 2008QFETFQB6N60 / FQI6N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially

 0.50. Size:355K  fairchild semi
fcb36n60n fcb36n60ntm.pdf

6N60
6N60

September 2010SupreMOSTMFCB36N60NN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

 0.51. Size:542K  fairchild semi
fqpf6n60.pdf

6N60
6N60

April 2000TMQFETQFETQFETQFETFQPF6N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 600V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been es

 0.52. Size:931K  fairchild semi
fqp6n60c fqp6n60c fqpf6n60c fqpf6n60c.pdf

6N60
6N60

QFETFQP6N60C/FQPF6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to

 0.53. Size:845K  fairchild semi
fcpf36n60n.pdf

6N60
6N60

December 2013FCP36N60N / FCPF36N60NTN-Channel SupreMOS MOSFET600 V, 36 A, 90 mFeatures Description RDS(on) = 81 m (Typ.) @ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductors nextgeneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC)employing a deep trench filling process that differentiates it from

 0.54. Size:685K  fairchild semi
fcp16n60n fcpf16n60nt.pdf

6N60
6N60

August 2009SupreMOSTMFCP16N60N / FCPF16N60NT N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedte

 0.55. Size:525K  fairchild semi
fdp6n60zu fdpf6n60zut.pdf

6N60
6N60

April 2009UniFETTMFDP6N60ZU / FDPF6N60ZUTN-Channel MOSFET, FRFET 600V, 4.5A, 2Features Description RDS(on) = 1.7 ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 14.5nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology

 0.56. Size:1208K  fairchild semi
fcp16n60 fcpf16n60.pdf

6N60
6N60

December 2008 TMSuperFETFCP16N60 / FCPF16N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

 0.57. Size:268K  fairchild semi
fca36n60nf.pdf

6N60
6N60

March 2013FCA36N60NF N-Channel SupreMOS FRFET MOSFET 600 V, 34.9 A, 95 mFeatures Description RDS(on) = 80 m (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductors next-generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC)employing a deep trench filling process that differentiate it from th

 0.58. Size:678K  fairchild semi
fqd6n60c.pdf

6N60
6N60

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s

 0.59. Size:408K  fairchild semi
fcp36n60n.pdf

6N60
6N60

November 2010SupreMOSTMFCP36N60NtmN-Channel MOSFET 600V, 36A, 90mFeatures Description RDS(on) = 81m ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 86nC)process that differentiates it from preceding multi-epi based technologies.

 0.60. Size:547K  fairchild semi
fch76n60nf.pdf

6N60
6N60

January 2011SupreMOSFCH76N60NFtm600V N-Channel MOSFET, FRFET Features Description RDS(on) = 28.7m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 230nC)process that differentiates it from preceding multi-epi based technologies. By

 0.61. Size:268K  samsung
sgw6n60ufd.pdf

6N60
6N60

N-CHANNEL IGBT SGW6N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 35nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

 0.62. Size:26K  samsung
irfs8xx irfs9xxx sss4n60 sss6n60.pdf

6N60

 0.63. Size:219K  samsung
sgw6n60uf.pdf

6N60
6N60

N-CHANNEL IGBT SGW6N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageVG

 0.64. Size:272K  samsung
sgp6n60ufd.pdf

6N60
6N60

N-CHANNEL IGBT SGP6N60UFDFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 35nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteri

 0.65. Size:219K  samsung
sgp6n60uf.pdf

6N60
6N60

N-CHANNEL IGBT SGP6N60UFFEATURESTO-220* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageVG

 0.66. Size:217K  samsung
sgu6n60uf.pdf

6N60
6N60

N-CHANNEL IGBT SGU6N60UFFEATURESI - PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=3A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter VoltageV

 0.67. Size:192K  vishay
irfp26n60l irfp26n60lpbf sihfp26n60l.pdf

6N60
6N60

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 0.68. Size:139K  vishay
irfib6n60a sihfib6n60a.pdf

6N60
6N60

IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi

 0.69. Size:865K  vishay
irfb16n60lpbf.pdf

6N60
6N60

IRFB16N60L, SiHFB16N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS*COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 100RequirementsQgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 0.70. Size:141K  vishay
sihfib6n60a.pdf

6N60
6N60

IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi

 0.71. Size:188K  vishay
irfp26n60l sihfp26n60l.pdf

6N60
6N60

IRFP26N60L, SiHFP26N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.21RoHS* Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 180COMPLIANTRequirementsQgs (nC) 61 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 0.72. Size:151K  vishay
sihh26n60e.pdf

6N60
6N60

SiHH26N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Fully lead (Pb)-free deviceVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) typ. () at 25 C VGS = 10 V 0.117 Low input capacitance (Ciss)Qg max. (nC) 116 Reduced switching and conduction lossesQgs (nC) 18Qgd (nC) 33 Ultra low gate charge (Qg)Con

 0.73. Size:652K  infineon
ikb06n60t.pdf

6N60
6N60

IKB06N60TTRENCHSTOP Series pLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeFeatures Very low VCE(sat) 1.5V (typ.) C Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps andvacuum cleaners GE

 0.74. Size:782K  infineon
sgb06n60.pdf

6N60
6N60

SGB06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-P

 0.75. Size:784K  infineon
sgb06n60 .pdf

6N60
6N60

SGB06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D-P

 0.76. Size:461K  infineon
skp06n60 ska06n60.pdf

6N60
6N60

SKP06N60 SKA06N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn

 0.77. Size:1142K  infineon
skb06n60.pdf

6N60
6N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.78. Size:222K  infineon
spp06n60c3.pdf

6N60
6N60

SPP06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO220-3-1 Extreme dv /dt rated Improved transconductanceType Package Ordering Co

 0.79. Size:1147K  infineon
skb06n60g.pdf

6N60
6N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.80. Size:767K  infineon
ihd06n60ra.pdf

6N60
6N60

IHD06N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos

 0.81. Size:1184K  infineon
skb06n60hs.pdf

6N60
6N60

SKB06N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn

 0.82. Size:338K  infineon
sgp06n60.pdf

6N60
6N60

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

 0.83. Size:819K  infineon
ihd06n60ra 1 3.pdf

6N60
6N60

IHD06N60RASoft Switching SeriesReverse conducting IGBT with monolithic body diodeC Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStop technology applications offers:GE - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to pos

 0.84. Size:853K  infineon
ika06n60trev2 3g.pdf

6N60
6N60

IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh

 0.85. Size:338K  infineon
sgd06n60.pdf

6N60
6N60

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

 0.86. Size:464K  infineon
ika06n60t.pdf

6N60
6N60

IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : GE - very

 0.87. Size:398K  infineon
ikp06n60trev2 3g.pdf

6N60
6N60

IKP06N60T TrenchStop Series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooki

 0.88. Size:1865K  infineon
ikd06n60-rf.pdf

6N60
6N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD06N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica

 0.89. Size:340K  infineon
sgp06n60 sgd06n60g.pdf

6N60
6N60

SGP06N60 SGD06N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252

 0.90. Size:459K  infineon
ska06n60.pdf

6N60
6N60

SKP06N60 SKA06N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn

 0.91. Size:758K  infineon
igd06n60trev2 1.pdf

6N60
6N60

IGD06N60T TrenchStop Series q Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temperature stabl

 0.92. Size:636K  infineon
spd06n60c3.pdf

6N60
6N60

SPD06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO252 Extreme dv /dt rated Improved transconductanceType Package Ordering Code

 0.93. Size:2318K  infineon
ikd06n60ra.pdf

6N60
6N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60RA600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD06N60RATRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 6

 0.94. Size:427K  infineon
igd06n60t.pdf

6N60
6N60

IGD06N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low VCE(sat) 1.5 V (typ.) C Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution GE - high ruggedness, temperature stable beha

 0.95. Size:459K  infineon
skp06n60.pdf

6N60
6N60

SKP06N60 SKA06N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: Motor controls, Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn

 0.96. Size:1800K  infineon
iku06n60r.pdf

6N60
6N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60R, IKU06N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsDatasheetIndustrial & MultimarketIKD06N60R, IKU06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (R

 0.97. Size:222K  infineon
spa06n60c3.pdf

6N60
6N60

SPA06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate charge1) 6.2 AID Periodic avalanche rated High peak current capability Ultra low effective capacitancesP-TO220-3-31 Extreme dv /dt rated Improved transconductance Fully isolated

 0.98. Size:516K  infineon
ikp06n60t.pdf

6N60
6N60

IKP06N60TTRENCHSTOP Series pLow Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft,fast recovery anti-parallel Emitter Controlled HE diodeFeaturesC Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : GE- Variable Speed Drive for washing machines, air conditioners and inducti

 0.99. Size:1800K  infineon
ikd06n60r.pdf

6N60
6N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60R600V TRENCHSTOPTM RC-Series for hard switching applicationsData sheetIndustrial Power ControlIKD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600

 0.100. Size:489K  infineon
igp06n60t.pdf

6N60
6N60

IGP06N60TTRENCHSTOP Series qLow Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technologyCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE TRENCHSTOP and Fieldstop technology for 600V applications offers :- very tight parameter distribution- high ruggedness, temperature stable behavior

 0.101. Size:1447K  infineon
ikd06n60rf.pdf

6N60
6N60

IGBTIGBT with integrated diode in packages offering space saving advantageIKD06N60RFTRENCHSTOPTM RC-Series for hard switching applications up to 30 kHzData sheetIndustrial Power ControlIKD06N60RFTRENCHSTOPTM RC-Drives Fast SeriesIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplica

 0.102. Size:1190K  infineon
skb06n60hsg.pdf

6N60
6N60

SKB06N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn

 0.103. Size:1188K  infineon
ikb06n60trev2 3g.pdf

6N60
6N60

IKB06N60T TrenchStop series p Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, GEpumps and vacuum cleaners TrenchSto

 0.104. Size:1918K  infineon
aihd06n60r.pdf

6N60
6N60

AIHD06N60RTRENCHSTOPTM RC-Series for hard switching applicationsIGBT with integrated diode in packages offering space saving advantageCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Optimised V and V for low conduction lossesCEsat FG Smooth switching performance leading to low EMI levelsE Very tight parameter distribution

 0.105. Size:371K  infineon
igp06n60trev2 2g.pdf

6N60
6N60

IGP06N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temper

 0.106. Size:136K  ixys
ixz316n60.pdf

6N60
6N60

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) Symbol Test Conditions Maximum Ratings 0.47 TJ = 25C to 150C VDSS 600 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

 0.107. Size:163K  ixys
ixzr16n60a ixzr16n60b.pdf

6N60
6N60

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

 0.108. Size:54K  ixys
ixsa16n60 ixsp16n60.pdf

6N60
6N60

Preliminary Data SheetIXSA 16N60 VCES = 600VLow VCE(sat) IGBT IXSP 16N60IC25 = 16AShort Circuit SOA CapabilityVCE(sat)typ = 1.8VTO-220AB(IXSP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263AAIC25 TC = 25C32 AIC90 TC = 90C16 AICM TC = 25

 0.109. Size:214K  ixys
ixga16n60b2d1.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (

 0.110. Size:220K  ixys
ixgp36n60a3.pdf

6N60
6N60

Preliminary Technical InformationIXGA36N60A3 VCES = 600VGenX3TM 600V IGBTIXGP36N60A3IC110 = 36AIXGH36N60A3VCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsE (TAB)VCES TC = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGE

 0.111. Size:197K  ixys
ixgp16n60c2.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2C2-Class IC110 = 16AIXGP16N60C2High Speed VCE(sat) 3.0Vtfi(typ) = 33nsTO-263 AA (IXGA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

 0.112. Size:144K  ixys
ixfr36n60p.pdf

6N60
6N60

IXFR 36N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 20 APower MOSFET RDS(on) 200 m (Electrically Isolated Back Surface)trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)E153432VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 15

 0.113. Size:216K  ixys
ixgh16n60c2d1.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

 0.114. Size:63K  ixys
ixtm6n60 ixtm6n60a ixtp6n60 ixtp6n60a.pdf

6N60

 0.115. Size:216K  ixys
ixgp16n60c2d1.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

 0.116. Size:179K  ixys
ixgh56n60b3.pdf

6N60
6N60

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH56N60B3IC110 = 56AVCE(sat) 1.80VMedium-Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VGCDES (TAB)VGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collecto

 0.117. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf

6N60
6N60

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 0.118. Size:197K  ixys
ixfh26n60p ixft26n60p ixfv26n60p.pdf

6N60
6N60

IXFH26N60P VDSS = 600 VPolarHVTMIXFT26N60P ID25 = 26 APower MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement ModeIXFV26N60PS trr 200 nsFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Contin

 0.119. Size:166K  ixys
ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf

6N60
6N60

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA16N60P3Power MOSFETs ID25 = 16AIXFP16N60P3 RDS(on) 440m IXFH16N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

 0.120. Size:197K  ixys
ixga16n60c2.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2C2-Class IC110 = 16AIXGP16N60C2High Speed VCE(sat) 3.0Vtfi(typ) = 33nsTO-263 AA (IXGA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

 0.121. Size:199K  ixys
ixgh56n60b3d1.pdf

6N60
6N60

VCES = 600VGenX3TM 600V IGBTIXGH56N60B3D1IC110 = 56AVCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C 56 AC (TAB)EICM TC = 25C, 1ms 350 A

 0.122. Size:175K  ixys
ixgh56n60a3.pdf

6N60
6N60

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH56N60A3IC110 = 56AVCE(sat) 1.35VUltra-Low Vsat PT IGBT for up to5 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VGCDES (TAB)VGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collector

 0.123. Size:230K  ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf

6N60
6N60

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

 0.124. Size:216K  ixys
ixga16n60c2d1.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

 0.125. Size:268K  ixys
ixfh36n60p ixft36n60p ixfk36n60p.pdf

6N60
6N60

IXFH 36N60P VDSS = 600 VPolarHVTM HiPerFETIXFK 36N60P ID25 = 36 APower MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

 0.126. Size:221K  ixys
ixga16n60b2.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2B2-Class High Speed IC110 = 16AIXGP16N60B2VCE(sat) 2.3Vtfi(typ) = 70nsTO-263 AA (IXGA)Symbol Test Conditions Maximum Ratings GEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

 0.127. Size:200K  ixys
ixgh36n60b3d4.pdf

6N60
6N60

VCES = 600VGenX3TM 600V IGBTIXGH36N60B3D4IC110 = 36AVCE(sat) 1.8VMedium speed low Vsat PTIGBT for 5-40kHz switchingTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 V GTABCVGEM Transient 30 VEIC110 TC = 110C 36 AIF110 TC = 110C 10 A

 0.128. Size:35K  ixys
ixsh16n60u1.pdf

6N60
6N60

IXSH 16N60U1VCES = 600VLow VCE(sat) IGBTIC25 = 16Awith DiodeVCE(sat)typ = 1.8VShort Circuit SOA CapabilityPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)GVGEM Transient 30 VCEIC25 TC = 25C32 AIC90 TC = 90C16 AG = Gate, C = Collecto

 0.129. Size:104K  ixys
ixfk26n60q ixfx26n60q.pdf

6N60
6N60

IXFK 26N60Q VDSS = 600 VHiPerFETTMIXFX 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary DataSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Conti

 0.130. Size:533K  ixys
ixgc16n60c2d1.pdf

6N60
6N60

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 0.131. Size:214K  ixys
ixgh16n60b2d1.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (

 0.132. Size:160K  ixys
ixgh36n60b3.pdf

6N60
6N60

Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 92 A

 0.133. Size:533K  ixys
ixgc16n60c2.pdf

6N60
6N60

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 0.134. Size:178K  ixys
ixgh36n60b3c1.pdf

6N60
6N60

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20

 0.135. Size:220K  ixys
ixgh36n60a3.pdf

6N60
6N60

Preliminary Technical InformationIXGA36N60A3 VCES = 600VGenX3TM 600V IGBTIXGP36N60A3IC110 = 36AIXGH36N60A3VCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsE (TAB)VCES TC = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGE

 0.136. Size:196K  ixys
ixgh36n60a3d4.pdf

6N60
6N60

Preliminary Technical InformationVCES = 600VGenX3TM 600V IGBTIXGH36N60A3D4with Diode IC110 = 36AVCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC1

 0.137. Size:107K  ixys
ixfh26n60q ixft26n60q.pdf

6N60
6N60

IXFH 26N60Q VDSS = 600 VHiPerFETTMIXFT 26N60Q ID25 = 26 APower MOSFETsRDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 V(TAB)VGS Continuous 20 V

 0.138. Size:82K  ixys
ixgc16n60b2d1.pdf

6N60
6N60

IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 0.139. Size:82K  ixys
ixgc16n60b2.pdf

6N60
6N60

IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 0.140. Size:221K  ixys
ixgp16n60b2.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2B2-Class High Speed IC110 = 16AIXGP16N60B2VCE(sat) 2.3Vtfi(typ) = 70nsTO-263 AA (IXGA)Symbol Test Conditions Maximum Ratings GEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

 0.141. Size:173K  ixys
ixgh36n60b3d1.pdf

6N60
6N60

GenX3TM 600V IGBT VCES = 600VIXGH36N60B3D1w/ Diode IC110 = 36A VCE(sat) 1.8V Medium-Speed Low-Vsat PT IGBTfor 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC110 TC = 110C 36 AG = Gate C = Col

 0.142. Size:214K  ixys
ixgp16n60b2d1.pdf

6N60
6N60

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (

 0.143. Size:220K  ixys
ixga36n60a3.pdf

6N60
6N60

Preliminary Technical InformationIXGA36N60A3 VCES = 600VGenX3TM 600V IGBTIXGP36N60A3IC110 = 36AIXGH36N60A3VCE(sat) 1.4VUltra Low Vsat PT IGBT forup to 5kHz switchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsE (TAB)VCES TC = 25C to 150C 600 VTO-220 (IXGP)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGE

 0.144. Size:1046K  onsemi
fqp6n60c fqpf6n60c.pdf

6N60
6N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.145. Size:953K  onsemi
fcp36n60n fcpf36n60nt.pdf

6N60
6N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.146. Size:112K  onsemi
ndf06n60z ndp06n60z.pdf

6N60
6N60

NDF06N60Z, NDP06N60ZN-Channel Power MOSFET600 V, 1.2 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant600 V1.2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP Unit

 0.147. Size:750K  onsemi
fcp16n60n fcpf16n60nt.pdf

6N60
6N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.148. Size:668K  onsemi
fcp16n60 fcpf16n60.pdf

6N60
6N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.149. Size:678K  onsemi
fch76n60nf.pdf

6N60
6N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.150. Size:220K  utc
6n60z.pdf

6N60
6N60

UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 0.151. Size:310K  utc
6n60kl-tms-t 6n60kg-tms-t 6n60kl-tms2-t 6n60kg-tms2-t 6n60kl-tms4-t 6n60kg-tms4-t 6n60kl-tn3-r 6n60kg-tn3-r 6n60kl-tnd-r 6n60kg-tnd-r 6n60kg-tm3-t.pdf

6N60
6N60

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

 0.152. Size:310K  utc
6n60kl-ta3-t 6n60kg-ta3-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tf1-t 6n60kg-tf1-t 6n60kl-tf2-t 6n60kg-tf2-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tm3-t.pdf

6N60
6N60

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

 0.153. Size:145K  apt
apt106n60b2c6.pdf

6N60
6N60

APT106N60B2C6 600V 106A 0.035 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with

 0.154. Size:525K  fuji
fmc16n60es.pdf

6N60
6N60

FMC16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

 0.155. Size:489K  fuji
fmv06n60es.pdf

6N60
6N60

FMV06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F (SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.7

 0.156. Size:518K  fuji
fmp16n60es.pdf

6N60
6N60

FMP16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

 0.157. Size:519K  fuji
fmv16n60es.pdf

6N60
6N60

FMV16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.2

 0.158. Size:523K  fuji
fmi16n60es.pdf

6N60
6N60

FMI16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5

 0.159. Size:478K  fuji
fmp06n60es.pdf

6N60
6N60

FMP06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5V

 0.160. Size:474K  fuji
fmi16n60e.pdf

6N60
6N60

FMI16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.161. Size:469K  fuji
fmv16n60e.pdf

6N60
6N60

FMV16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 0.162. Size:474K  fuji
fmc16n60e.pdf

6N60
6N60

FMC16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.163. Size:490K  fuji
fmc06n60es.pdf

6N60
6N60

FMC06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5

 0.164. Size:489K  fuji
fmi06n60es.pdf

6N60
6N60

FMI06N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(L)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.70.5

 0.165. Size:530K  fuji
fmh16n60es.pdf

6N60
6N60

FMH16N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V

 0.166. Size:311K  fuji
fml16n60es.pdf

6N60
6N60

http://www.fujisemi.comFML16N60ES FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTFP9.00.27.00.2 0.40.1Lower R (on) characteristicDS4More controllable switching dv/dt by gate resistance4 DSmaller V ringing waveform during switchingGSNarrow

 0.167. Size:502K  fuji
fmp06n60e.pdf

6N60
6N60

FMP06N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.168. Size:469K  fuji
fmv06n60e.pdf

6N60
6N60

FMV06N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.

 0.169. Size:468K  fuji
fmp16n60e.pdf

6N60
6N60

FMP16N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220ABLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

 0.170. Size:477K  secos
ssq6n60.pdf

6N60
6N60

SSQ6N60 2.6A, 600V, RDS(ON) 1500m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-220P DFEATURES C Low RDS(on) Technology. BR Low thermal impedance. T Fast switching speed. AESGAPPLICATIONS F I Electronic ballast. HJ Electronic transformer K

 0.171. Size:1221K  kec
kf6n60p-f.pdf

6N60
6N60

KF6N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF6N60PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 600V, ID= 6A

 0.172. Size:482K  kec
kf6n60d-i.pdf

6N60
6N60

KF6N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF6N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLC D_A 6.60 + 0.20avalanche characteristics. It is mainly suitable for electronic ballast and_B 6.10 + 0.20_C 5.

 0.173. Size:71K  hsmc
h06n60.pdf

6N60
6N60

Spec. No. : MOS200402HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.03.10MICROELECTRONICS CORP.Page No. : 1/6H06N60 Series Pin AssignmentH06N60 SeriesTab 3-Lead Plastic TO-263N-Channel Power Field Effect TransistorPackage Code: UPin 1: GatePin 2 & Tab: Drain32Pin 3: Source1DescriptionTabThis high voltage MOSFET uses an advanced termination scheme t

 0.174. Size:292K  ssdi
sff16n60nc.pdf

6N60
6N60

 0.175. Size:528K  alfa-mos
afn06n60t220ft afn06n60t251t.pdf

6N60
6N60

AFN06N60 Alfa-MOS 600V / 6A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN06N60 is an N-channel enhancement mode Power 600V/3A,RDS(ON)=1.5(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

 0.176. Size:130K  samhop
sdu06n60 sdd06n60.pdf

6N60
6N60

GreenProduct SDU/D06N60aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.600V 6A 1.18 @ VGS=10V Suface Mount Package.DGGSSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)

 0.177. Size:188K  samhop
sdf06n60 sdp06n60.pdf

6N60
6N60

SDP06N60SDF06N60aS mHop Microelectronics C orp.Ver 2.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 6A 1.3 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package Mar

 0.178. Size:165K  solitron
sdf6n60.pdf

6N60

 0.179. Size:443K  silikron
ssf6n60g.pdf

6N60
6N60

SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.180. Size:473K  inpower semi
ftp06n60c fta06n60c.pdf

6N60
6N60

FTP06N60CFTA06N60CPbN-Channel MOSFETLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power600 V 1.25 6A SMPS Power Supply LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveG GGOrdering InformationDSDS TO-220FTO-220 SPART NUMBER

 0.181. Size:751K  blue-rocket-elect
brd6n60.pdf

6N60
6N60

BRD6N60(BRCS6N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features DS dv/dt Low RDS(ON)Low gate chargeLow Crss Fast switchingImproved dv/dt capability.

 0.182. Size:933K  blue-rocket-elect
brf6n60.pdf

6N60
6N60

BRF6N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features DS dv/dt Low RDS(ON), Low gate charge, Low Crss , Fast switching, Improved dv/dt capability. / App

 0.183. Size:457K  nell
6n60a 6n60af 6n60f 6n60g.pdf

6N60
6N60

RoHS 6N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(6A, 600Volts)DESCRIPTION The Nell 6N60 is a three-terminal silicon DDdevice with current conduction capabilityof 6A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

 0.184. Size:474K  nell
16n60a 16n60af 16n60b.pdf

6N60
6N60

RoHS 16N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(16A, 600Volts)DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. sucha

 0.185. Size:426K  crhj
cs16n60 a8h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.186. Size:302K  crhj
cs6n60f a9h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.187. Size:413K  crhj
cs6n60f a9ty.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.188. Size:351K  crhj
cs6n60 a4d.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.189. Size:353K  crhj
cs6n60 a3d.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 0.190. Size:295K  crhj
cs6n60 a8h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A8H General Description VDSS 600 V CS6N60 A8H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 0.191. Size:319K  crhj
cs6n60 a3ty.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.192. Size:230K  crhj
cs6n60 a3hdy.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A3HDY General Description VDSS 600 V CS6N60 A3HDY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.193. Size:422K  crhj
cs6n60 a4ty.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.194. Size:306K  crhj
cs16n60f a9h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.195. Size:308K  crhj
cs6n60 a7h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A7H General Description VDSS 600 V CS6N60 A7H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.196. Size:306K  crhj
cs6n60 a4h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A4H General Description VDSS 600 V CS6N60 A4H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.197. Size:302K  crhj
cs6n60f a9h-g.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60F A9H-G General Description VDSS 600 V CS6N60F A9H-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.198. Size:123K  jdsemi
cm6n60.pdf

6N60
6N60

RC66MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 3

 0.199. Size:125K  jdsemi
cm6n60f.pdf

6N60
6N60

RC66FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 21 2 3

 0.200. Size:1327K  kexin
ndt6n60p.pdf

6N60
6N60

DIP Type MOSFETN-Channel MOSFETNDT6N60PTO-251 Features VDS (V) = 600V1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance1 32DrainUnit: mmGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V Gate-Source Voltage V

 0.201. Size:1815K  kexin
ndt6n60.pdf

6N60
6N60

SMD Type MOSFETN-Channel MOSFETNDT6N60 TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 VDS (V) = 600V ID = 6 A (VGS = 10V) RDS(ON) 1.7 (VGS = 10V) 0.1270.80+0.1 max-0.1 Low Gate Charge Low Reverse transfer capacitances1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.153 Source4 Drain

 0.202. Size:452K  silan
svf6n60f svf6n60dtr svf6n60fq.pdf

6N60
6N60

SVF6N60F/D/FQ 6A600V N 2SVF6N60F/D/FQ N MOS F-CellTM VDMOS 11 3 TO-252-2L3

 0.203. Size:547K  silan
svf6n60mj svf6n60f svf6n60d.pdf

6N60
6N60

SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

 0.204. Size:808K  magnachip
mdf6n60bth.pdf

6N60
6N60

MDF6N60B N-Channel MOSFET 600V, 6A, 1.45General Description Features The MDF6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 6.0A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.4 @ VGS = 10V MDF6N60B is suitable device for SMPS, high Speed Applications switch

 0.205. Size:1095K  magnachip
mdf6n60th mdp6n60th.pdf

6N60
6N60

MDP6N60/MDF6N60 N-Channel MOSFET 600V, 6A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 6.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

 0.206. Size:833K  magnachip
mdd6n60grh.pdf

6N60
6N60

MDD6N60G N-Channel MOSFET 600V, 4.5A, 1.45General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.5A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 1.45 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high S

 0.207. Size:789K  magnachip
mdi6n60bth.pdf

6N60
6N60

MDI6N60B N-Channel MOSFET 600V, 4.5A, 1.45General Description Features The MDI6N60B uses advanced MagnaChips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 4.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 1.45 @ VGS = 10V MDI6N60B is suitable device for SMPS, high Speed Applications swi

 0.208. Size:848K  bruckewell
msf6n60.pdf

6N60
6N60

MSF6N60 N-Channel Enhancement Mode Power MOSFET Description The MSF6N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim

 0.209. Size:487K  belling
blv6n60.pdf

6N60
6N60

BLV6N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.2 Simple Drive Requirements ID 6ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless

 0.210. Size:92K  crownpo
ctm06n60.pdf

6N60
6N60

CTM06N60CTM06N60Crownpo TechnologyCrownpo TechnologyPower MOSFETFeatures General DescriptionRobust High Voltage TerminationThis high voltage MOSFET uses an advanced terminationAvalanche Energy Specifiedscheme to provide enhanced voltage-blocking capabilitySource-to-Drain Diode Recovery Time Comparable to awithout degrading performance over time. In addition,

 0.211. Size:185K  hy
hy6n60d.pdf

6N60
6N60

HY6N60D / HY6N60M600V / 6.0A600V, RDS(ON)=1.8@VGS=10V, ID=3.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS21 1D G 2 In compliance with EU RoHs 2002/95/EC Directives G3DS3SMec

 0.212. Size:106K  hy
hy6n60t.pdf

6N60
6N60

HY6N60T / HY6N60FT600V / 6.0A600V, RDS(ON)=1.8@VGS=10V, ID=3.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDS

 0.213. Size:231K  lzg
cs6n60f.pdf

6N60
6N60

BRF6N60(CS6N60F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : DS dv/dt Features: Low R Low gate chargeLow C

 0.214. Size:11840K  pipsemi
pta26n60.pdf

6N60
6N60

PTA26N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 250m 26A RDS(ON),typ.=250 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P

 0.215. Size:431K  pipsemi
ptp16n60 pta16n60.pdf

6N60
6N60

PTP16N60 PTA16N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology600V 0.41 16A RDS(ON),typ.=0.41 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP16N60

 0.216. Size:661K  pipsemi
ptw36n60.pdf

6N60
6N60

PTW36N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 120m 36A RDS(ON),typ.=120 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver G D Electric Welder S High Efficiency SMPS TO-3P Ordering Information Package Not to Scale Part Number Pack

 0.217. Size:590K  samwin
swf16n60d.pdf

6N60
6N60

SW16N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V High ruggedness Low RDS(ON) (Typ 0.4)@VGS=10V ID : 16A Low Gate Charge (Typ 68nC) RDS(ON) : 0.4 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow

 0.218. Size:835K  samwin
swf6n60d swd6n60d swn6n60d.pdf

6N60
6N60

SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS : 600V High ruggedness ID : 6A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) :1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application: UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source

 0.219. Size:653K  samwin
swf6n60k.pdf

6N60
6N60

SW6N60K N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 600V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 0.72)@VGS=10V RDS(ON) : 0.72 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 Application:Charger,LED 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is

 0.220. Size:724K  samwin
swf16n60k.pdf

6N60
6N60

SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

 0.221. Size:244K  sanrise-tech
srm6n60.pdf

6N60
6N60

Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 0.222. Size:198K  semihow
hfp6n60u.pdf

6N60
6N60

July 2012BVDSS = 600 VRDS(on) typ HFP6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 0.223. Size:203K  semihow
hfd6n60u.pdf

6N60
6N60

Jan 2014BVDSS = 600 VRDS(on) typ HFD6N60U / HFU6N60U ID = 4.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD6N60U HFU6N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 n

 0.224. Size:306K  semihow
hfs6n60u.pdf

6N60
6N60

July 2012BVDSS = 600 VRDS(on) typ HFS6N60U ID = 6.0 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area

 0.225. Size:761K  trinnotech
tman16n60.pdf

6N60
6N60

TMAN16N60 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A

 0.226. Size:457K  trinnotech
tman16n60a.pdf

6N60
6N60

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 0.227. Size:618K  trinnotech
tmp16n60a tmpf16n60a.pdf

6N60
6N60

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 0.228. Size:341K  trinnotech
tmp16n60 tmpf16n60.pdf

6N60
6N60

TMP16N60/TMPF16N60TMP16N60G/TMPF16N60GVDSS = 660 V @TjmaxFeaturesID = 16A Low gate chargeRDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHSTMP16N60G / TMPF16N60G

 0.229. Size:712K  truesemi
tsf16n60mr.pdf

6N60
6N60

TSF16N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,600V,Max.RDS(on)=0.47 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a

 0.230. Size:681K  way-on
wml26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmo26n60c4 wmj26n60c4.pdf

6N60
6N60

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 0.231. Size:681K  way-on
wml26n60c4 wmo26n60c4 wmk26n60c4 wmn26n60c4 wmm26n60c4 wmj26n60c4.pdf

6N60
6N60

WML26N60C4, WMO26N6 WM C4 W 60C4, MK26N60CWMN2 MJ26N60C26N60C4, WMM26N60C4, WM C4 600V 0.16 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM

 0.232. Size:679K  way-on
wml26n60f2 wmo26n60f2 wmk26n60f2 wmn26n60f2 wmm26n60f2 wmj26n60f2.pdf

6N60
6N60

WML2 N60F2, WM F2 26N60F2, WMO26N MK26N60FWMN2 N60F2, WM F2 26N60F2, WMM26N MJ26N60F 600V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa

 0.233. Size:669K  way-on
wml36n60f2 wmk36n60f2 wmn36n60f2 wmm36n60f2 wmj36n60f2.pdf

6N60
6N60

WML36N60F2, WM F2 MK36N60FWMN3 N60F2, WM F2 36N60F2, WMM36N MJ36N60F 600V 0.087 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET ffering

 0.234. Size:671K  way-on
wml36n60c4 wmk36n60c4 wmn36n60c4 wmm36n60c4 wmj36n60c4.pdf

6N60
6N60

WML36N6 WM C4 60C4, MK36N60CWMN3 MJ36N60C36N60C4, WMM36N60C4, WM C4 600V 0.08 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

 0.235. Size:413K  wuxi china
cs6n60fa9ty.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60F A9TY General Description VDSS 600 V CS6N60F A9TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.236. Size:426K  wuxi china
cs16n60a8h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.237. Size:319K  wuxi china
cs6n60a3ty.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.238. Size:422K  wuxi china
cs6n60a4ty.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.239. Size:231K  wuxi china
cs6n60a3d.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 0.240. Size:302K  wuxi china
cs6n60fa9h.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60F A9H General Description VDSS 600 V CS6N60F A9H, the silicon N-channel Enhanced ID 6 A PD(TC=25) 34 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.241. Size:351K  wuxi china
cs6n60a4d.pdf

6N60
6N60

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.242. Size:694K  convert
csfr6n60f csfr6n60k csfr6n60u csfr6n60d.pdf

6N60
6N60

CSFR6N60F,CSFR6N60KnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR6N60U,CSFR6N60D600V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package In

 0.243. Size:776K  convert
cs16n60f cs16n60p.pdf

6N60
6N60

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

 0.244. Size:1091K  lonten
lnd16n60 lnc16n60.pdf

6N60
6N60

LND16N60/LNC16N60Lonten N-channel 600V, 16A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 16ADresulting device has low conduction resistance, R 0.5DS(on),maxsuperior switching performance and high avalanche Q 53.2 nCg,typenergy.Features Low RDS(on) Low gate charge (typ. Q = 5

 0.245. Size:824K  cn vbsemi
stf6n60m2.pdf

6N60
6N60

STF6N60M2www.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy rated (UIS)Qgd (nC) 2.7Configuratio

 0.246. Size:921K  cn vbsemi
fqpf6n60c.pdf

6N60
6N60

FQPF6N60Cwww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS

 0.247. Size:827K  cn hmsemi
hm16n60f.pdf

6N60
6N60

VDSS 600 V General Description ID 16 A HM16N60F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 0.248. Size:698K  cn xiner
xnf6n60t.pdf

6N60
6N60

Data Sheet XNF6N60T 600V/6A IGBT /PRODUCT FEATURES 2 + Advanced Trench+FS IGBT technology 1 Low Collector-Emitter Saturation voltage 3 With anti-parallel fast recovery diode TJ = 175 C Maximum junction temperature: TJ =

 0.249. Size:247K  inchange semiconductor
spp06n60c3.pdf

6N60
6N60

isc N-Channel MOSFET Transistor SPP06N60C3ISPP06N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.75Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 0.250. Size:275K  inchange semiconductor
irfib6n60a.pdf

6N60
6N60

iscN-Channel MOSFET Transistor IRFIB6N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.251. Size:222K  inchange semiconductor
fcpf16n60.pdf

6N60
6N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF16N60FEATURES Drain-source on-resistance:RDS(on) 0.26@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for various AC/DC power conversion in switching modeoperation for system miniaturization and

 0.252. Size:257K  inchange semiconductor
fcpf16n60nt.pdf

6N60
6N60

isc N-Channel MOSFET Transistor FCPF16N60NTFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 0.253. Size:245K  inchange semiconductor
spd06n60c3.pdf

6N60
6N60

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 0.254. Size:201K  inchange semiconductor
spa06n60c3.pdf

6N60
6N60

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA06N60C3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

 0.255. Size:400K  inchange semiconductor
irfp26n60l.pdf

6N60
6N60

iscN-Channel MOSFET Transistor IRFP26N60LFEATURESLow drain-source on-resistance:RDS(ON) =0.25 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.256. Size:207K  inchange semiconductor
fcp36n60n.pdf

6N60
6N60

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP36N60NFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

 0.257. Size:257K  inchange semiconductor
fcp16n60n.pdf

6N60
6N60

isc N-Channel MOSFET Transistor FCP16N60NFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Другие MOSFET... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BS170 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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